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    LOGICAL OPERATION ELEMENT
    4.
    发明申请
    LOGICAL OPERATION ELEMENT 有权
    逻辑操作元件

    公开(公告)号：US20160027908A1

    公开(公告)日：2016-01-28

    申请号：US14773581

    申请日：2014-03-09

    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

    Inventor： Yutaka Majima ,  Toshiharu Teranishi ,  Kazuhiko Matsumoto ,  Kenzo Maehashi ,  Tomofumi Susaki ,  Yasuhide Ohno ,  Kosuke Matsuzaki ,  Guillaume Hubert Frederic Hackenberger

    IPC: H01L29/76 ,  H01L29/06

    CPC classification number: H01L29/7613 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0665 ,  H01L29/127 ,  H01L29/41725 ,  H01L29/4232 ,  H01L29/66439

    Abstract: Provided is a logical operation element that performs logical operations on three or more inputs using a single unique device. The logical operation element 30 is provided with an electrode 5A and the other electrode 5B that are provided to have a nanogap, a metal nanoparticle 7 arranged between the electrode 5A and the other electrode 5B in insulated state, and a plurality of gate electrodes 5C, 5D, 11, 11A, 11B for adjusting a charge of the metal nanoparticle 7. Electric current that flows between the electrode 5A and the other electrode 5B is controlled in accordance with the voltage applied to three or more of the gate electrodes 5C, 5D, 11, 11A, 11B.

    Abstract translation: 提供了使用单个唯一设备对三个或更多个输入执行逻辑运算的逻辑运算元件。 逻辑运算元件30设置有电极5A和设置成具有纳米隙的另一电极5B，绝缘状态下布置在电极5A和另一电极5B之间的金属纳米颗粒7，以及多个栅极电极5C， 用于调整金属纳米颗粒7的电荷的电流5A，11A，11A，11B。根据施加到三个或更多个栅极电极5C，5D的电压来控制在电极5A和另一个电极5B之间流动的电流， 11,11A，11B。

    FIELD-EFFECT TRANSISTOR, SINGLE-ELECTRON TRANSISTOR AND SENSOR USING THE SAME
    5.
    发明申请
    FIELD-EFFECT TRANSISTOR, SINGLE-ELECTRON TRANSISTOR AND SENSOR USING THE SAME 有权
    场效应晶体管，单电子晶体管和传感器

    公开(公告)号：US20150102283A1

    公开(公告)日：2015-04-16

    申请号：US14302842

    申请日：2014-06-12

    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

    Inventor： Kazuhiko Matsumoto ,  Atsuhiko Kojima ,  Satoru Nagao ,  Masanori Katou ,  Yutaka Yamada ,  Kazuhiro Nagaike ,  Yasuo Ifuku ,  Hiroshi Mitani

    IPC: G01N27/414 ,  H01L29/76 ,  H01L29/423 ,  H01L29/06

    CPC classification number: G01N27/4145 ,  B82Y10/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/068 ,  H01L29/42364 ,  H01L29/7613

    Abstract: A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided.It comprises a field-effect transistor 1A having a substrate 2, a source electrode 4 and a drain electrode 5 provided on said substrate 2, and a channel 6 forming a current path between said source electrode 4 and said drain electrode 5; wherein said field-effect transistor 1A comprises: an interaction-sensing gate 9 for immobilizing thereon a specific substance 10 that is capable of selectively interacting with the detection targets; and a gate 7 applied a voltage thereto so as to detect the interaction by the change of the characteristic of said field-effect transistor 1A.

    Abstract translation: 提供能够检测需要以高灵敏度检测的检测目标的传感器。 它包括具有衬底2，设置在所述衬底2上的源电极4和漏电极5的场效应晶体管1A以及形成在所述源电极4和所述漏电极5之间的电流通路的通道6; 其中所述场效应晶体管1A包括：用于固定其上能够选择性地与检测目标相互作用的特定物质10的相互作用感测门9; 并且门7向其施加电压，以便通过所述场效应晶体管1A的特性的变化来检测相互作用。

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