Magnetoresistive element and memory circuit including a free layer

    公开(公告)号:US10304508B2

    公开(公告)日:2019-05-28

    申请号:US15578377

    申请日:2016-05-31

    Abstract: A magnetoresistive element includes: a free layer that includes a magnetostrictive layer containing a magnetostrictive material; a pin layer that includes a first ferromagnetic layer; a thin film that is located between the pin layer and the free layer; a piezoelectric substance that is located so as to surround at least a part of the magnetostrictive layer from a direction intersecting with a stacking direction of the free layer and the pin layer and applies a pressure to the magnetostrictive layer; and an electrode that is capable of applying a voltage different from a voltage applied to the free layer and a voltage applied to the pin layer and applies a voltage to the piezoelectric substance so that the piezoelectric substance applies a pressure to the magnetostrictive layer.

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