公开(公告)号：US20150333472A1

公开(公告)日：2015-11-19

申请号：US14139290

申请日：2013-12-23

申请人： JDS Uniphase Corporation

发明人： Abdullah Demir ,  Matthew Glenn Peters

IPC分类号： H01S3/10 ,  H01S5/223 ,  H01S5/40 ,  H01S5/028 ,  H01S5/022

CPC分类号： H01S3/10061 ,  H01S5/0071 ,  H01S5/02236 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/22 ,  H01S5/223 ,  H01S5/4012 ,  H01S5/4025 ,  H01S5/4043 ,  H01S5/4056 ,  H01S5/4075

摘要： The invention relates to bi-directional long-cavity semiconductor lasers for high power applications having two AR coated facets (2AR) to provide an un-folded cavity with enhanced output power. The lasers exhibit more uniform photon and carrier density distributions along the cavity than conventional uni-directional high-power lasers, enabling longer lasers with greater output power and lasing efficiency due to reduced longitudinal hole burning. Optical sources are further provided wherein radiation from both facets of several 2AR lasers that are disposed at vertically offset levels is combined into a single composite beam.

摘要翻译： 本发明涉及用于大功率应用的双向长腔半导体激光器，其具有两个AR涂层小面（2AR），以提供具有增强输出功率的未折叠空腔。 与传统的单向大功率激光器相比，激光器沿着腔体表现出更均匀的光子和载流子密度分布，由于减少纵向孔燃烧，能够实现更大的输出功率和激光效率的激光器。 进一步提供光源，其中设置在垂直偏移电平处的若干2AR激光器的两个面的辐射被组合成单个复合光束。