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    CONTACTING MODULE HAVING A MOUNTING PLATE FOR CONTACTING OPTOELECTRONIC CHIPS
    1.
    发明公开
    CONTACTING MODULE HAVING A MOUNTING PLATE FOR CONTACTING OPTOELECTRONIC CHIPS 审中-公开

    公开(公告)号：US20240219461A2

    公开(公告)日：2024-07-04

    申请号：US18041598

    申请日：2021-01-27

    Applicant: JENOPTIK Optical Systems GmbH

    Inventor： Robert BUETTNER ,  Armin GRUNDMANN ,  Tobias GNAUSCH ,  Thomas KADEN ,  Stefan FRANZ ,  Christian KARRAS

    IPC: G01R31/311 ,  G01R31/28

    CPC classification number: G01R31/311 ,  G01R31/2887

    Abstract: A contacting module and to a method for assembling a contacting module. The contacting module includes: an optical module which contains an optical block made of glass, which optical block has an arrangement of optical interfaces (Sopt) in an optical interface plane (Eopt); and an electronic module, which has an arrangement of electrical interfaces (Sele) in an electrical interface plane (Eele). The optical module and the electronic module are arranged relative to each other such that the arrangement of optical interfaces (Sopt) and the arrangement of electrical interfaces (Sele) have a defined alignment position relative to each other. The optical module contains a mounting plate which is connected to the electronic module by means of a repeatedly releasable, reproducible connection.

    DEVICE FOR MEASURING A POWER DENSITY DISTRIBUTION OF A RADIATION SOURCE
    2.
    发明申请
    DEVICE FOR MEASURING A POWER DENSITY DISTRIBUTION OF A RADIATION SOURCE 有权
    用于测量辐射源功率密度分布的装置

    公开(公告)号：US20150060683A1

    公开(公告)日：2015-03-05

    申请号：US14471314

    申请日：2014-08-28

    Applicant: JENOPTIK Optical Systems GmbH

    Inventor： Tobias GNAUSCH ,  Meik PANITZ ,  Ralf MUELLER ,  Marc HIMEL

    IPC: G01J1/42

    CPC classification number: G01J1/4257 ,  G01J1/0407 ,  G01J1/429

    Abstract: A device and method for measuring a power density distribution of a radiation source is provided. The device includes a radiation source designed to emit a light beam in a radiation direction; a substrate disposed downstream of the radiation source in the radiation direction and having an extent in an x-direction and a y-direction, the substrate having a first region and at least one further second region, and the first region comprises a diffractive structure designed to separate the light beam impinging on the substrate into a zeroth order of diffraction and at least one first order of diffraction; and a detector unit disposed downstream of the substrate in the radiation direction and designed to measure the intensity of the first order of diffraction transmitted through the substrate and to derive a power density distribution therefrom.

    Abstract translation: 提供了一种用于测量辐射源的功率密度分布的装置和方法。 该装置包括设计成沿辐射方向发射光束的辐射源; 衬底，其设置在所述辐射源的所述辐射源的下游并具有x方向和y方向的范围，所述衬底具有第一区域和至少一个另外的第二区域，并且所述第一区域包括设计的衍射结构 将入射到基板上的光束分离成零级衍射和至少一个衍射级; 以及检测器单元，其沿辐射方向设置在所述基板的下游，并且被设计成测量透过所述基板的一阶衍射的强度并从其导出功率密度分布。

    OPTICAL DEVICE AND METHOD FOR PRODUCING AN OPTICAL DEVICE
    3.
    发明公开
    OPTICAL DEVICE AND METHOD FOR PRODUCING AN OPTICAL DEVICE 审中-公开

    公开(公告)号：US20240361542A1

    公开(公告)日：2024-10-31

    申请号：US18291295

    申请日：2022-07-13

    Applicant: JENOPTIK Optical Systems GmbH

    Inventor： Christian KARRAS ,  Thomas KADEN ,  Tobias GNAUSCH ,  Robert BUETTNER ,  Armin GRUNDMANN

    IPC: G02B6/42

    CPC classification number: G02B6/4214

    Abstract: An optical module for modifying a light beam, wherein the optical module is made of a single-piece solid body material and has a passage surface for receiving the light beam. Furthermore, the optical module comprises a beam deflecting region lying opposite the passage surface for deflecting the light beam, wherein the beam deflecting region is designed as a curved region on the exterior of the optical module, in particular so as to have a hollow mirror function, a pass-through surface for outputting the light beam deflected by the beam deflecting region and a beam shaping region that is designed to shape the light beam and additionally or alternatively thereto the deflected light beam such that the light beam has a beam profile a with homogeneous intensity distribution over a specified range.

    WAFER-LEVEL TEST METHOD FOR OPTOELECTRONIC CHIPS
    6.
    发明申请
    WAFER-LEVEL TEST METHOD FOR OPTOELECTRONIC CHIPS 有权

    公开(公告)号：US20240369624A1

    公开(公告)日：2024-11-07

    申请号：US18287141

    申请日：2022-04-12

    Applicant: JENOPTIK Optical Systems GmbH

    Inventor： Christian KARRAS ,  Tobias GNAUSCH ,  Robert BUETTNER ,  Kay REETZ ,  Armin GRUNDMANN ,  Thomas KADEN

    IPC: G01R31/28 ,  G01R31/311

    Abstract: A method for testing optoelectronic chips that are arranged on a wafer and comprise electric interfaces in the form of contact pads and optical interfaces, which are arranged in a fixed manner relative to the electric interfaces, in the form of optical deflecting elements, e.g. grating couplers, at a specified coupling angle. In the process, the wafer is adjusted in three adjustment steps in such a manner that one of the chips is positioned relative to a contacting module such that the electric interfaces of the chip and the contacting module are in contact with one another and the optical interfaces of the chip and the contacting module assume a maximum position of the optical coupling.

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