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公开(公告)号：US20240250204A1
公开(公告)日：2024-07-25
申请号：US18599055
申请日：2024-03-07
Inventor： Menglei XU , Jie YANG , Xinyu ZHANG , Hao JIN
IPC: H01L33/00 , H01L31/0216 , H01L31/0236 , H01L31/068 , H01L31/18 , H01L33/44
CPC classification number: H01L33/0016 , H01L31/02167 , H01L31/02168 , H01L31/02363 , H01L31/0682 , H01L31/1804 , H01L31/1864 , H01L31/1868 , H01L33/44 , Y02E10/546 , Y02E10/547 , Y02P70/50
Abstract: A solar cell and a photovoltaic module is disclosed. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.
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Patent Agency Ranking
2.发明公开公开(公告)号：US20230395734A1
公开(公告)日：2023-12-07
申请号：US18234845
申请日：2023-08-16
Inventor： Xiu FENG , Menglei XU , Jie YANG , Xinyu ZHANG , Hao JIN
IPC: H01L31/0224
CPC classification number: H01L31/022458 , H01L31/022433
Abstract: Provided is a busbar-free interdigitated back contact (IBC) solar cell and an IBC solar cell module. The IBC solar cell includes a semiconductor substrate, finger electrode lines and conductive lines. The finger electrode lines include first finger electrode lines and second finger electrode lines that are alternately arranged on the semiconductor substrate. The conductive lines include first conductive lines and second conductive lines that are alternately arranged. The first conductive lines are connected to the first finger electrode lines and spaced apart from the second finger electrode lines. The second conductive lines are connected to the second finger electrode lines and spaced apart from the first finger electrode lines.
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公开(公告)号：US20230395740A1
公开(公告)日：2023-12-07
申请号：US17859975
申请日：2022-07-07
Applicant: JINKO SOLAR (HAINING) CO., LTD.
Inventor： Jie MAO , Menglei XU , Peiting ZHENG , Jie YANG , Xinyu ZHANG
IPC: H01L31/06 , H01L31/05 , H01L31/0352
CPC classification number: H01L31/06 , H01L31/0504 , H01L31/035272
Abstract: A photovoltaic cell is provided, including: a substrate; a tunneling layer, a field passivation layer and a first passivation film that are sequentially disposed on a rear surface of the substrate; and a first electrode. The first electrode penetrates the first passivation film and is in contact with the field passivation layer. A doping concentration of the first doping element in the tunneling layer is less than a doping concentration of the first doping element in the field passivation layer, and the doping concentration of the first doping element in the tunneling layer is greater than a doping concentration of the first doping element in the substrate. The field passivation layer includes a first doped region and a second doped region, and a doping curve slope of the first doped region is greater than a doping curve slope of the second doped region.
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4.发明公开公开(公告)号：US20230144807A1
公开(公告)日：2023-05-11
申请号：US17549732
申请日：2021-12-13
Inventor： Xiu FENG , Menglei XU , Jie YANG , Xinyu ZHANG , Hao JIN
IPC: H01L31/0224
CPC classification number: H01L31/022458 , H01L31/022433
Abstract: Provided is a busbar-free interdigitated back contact (IBC) solar cell and an IBC solar cell module. The IBC solar cell includes a semiconductor substrate, finger electrode lines and conductive lines. The finger electrode lines include first finger electrode lines and second finger electrode lines that are alternately arranged on the semiconductor substrate. The conductive lines include first conductive lines and second conductive lines that are alternately arranged. The first conductive lines are connected to the first finger electrode lines and spaced apart from the second finger electrode lines. The second conductive lines are connected to the second finger electrode lines and spaced apart from the first finger electrode lines.
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公开(公告)号：US20240072196A1
公开(公告)日：2024-02-29
申请号：US18504972
申请日：2023-11-08
Inventor： Menglei XU , Jie YANG , Xinyu ZHANG , Hao JIN
IPC: H01L33/00 , H01L31/0216 , H01L31/0236 , H01L31/068 , H01L31/18 , H01L33/44
CPC classification number: H01L33/0016 , H01L31/02167 , H01L31/02168 , H01L31/02363 , H01L31/0682 , H01L31/1804 , H01L31/1864 , H01L31/1868 , H01L33/44 , Y02E10/546 , Y02E10/547 , Y02P70/50
Abstract: Provided is a solar cell and a photovoltaic module. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.
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公开(公告)号：US20230143714A1
公开(公告)日：2023-05-11
申请号：US17549029
申请日：2021-12-13
Inventor： Menglei XU , Jie YANG , Xinyu ZHANG , Hao JIN
CPC classification number: H01L33/0016 , H01L33/44
Abstract: Provided is a solar cell and a photovoltaic module. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.
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