公开(公告)号：US20170003595A1

公开(公告)日：2017-01-05

申请号：US15267923

申请日：2016-09-16

Applicant: JSR CORPORATION

Inventor： Shun AOKI ,  Hiromitsu Tanaka ,  Goji Wakamaytsu ,  Yoshio Takimoto ,  Masayoshi Ishikawa ,  Toru Kimura

IPC: G03F7/11 ,  G03F7/40 ,  C09D161/14

CPC classification number: G03F7/11 ,  C07C217/18 ,  C07C279/08 ,  C08G8/04 ,  C08G8/20 ,  C08G8/36 ,  C08L61/06 ,  C09D161/14 ,  C09D183/04 ,  G03F7/075 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/26 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40 ,  G03F7/405 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02057 ,  H01L21/0274 ,  H01L21/30604 ,  H01L21/3081 ,  Y02P20/582

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.

Abstract translation: 图案形成方法包括：在基板的上表面侧上形成抗蚀剂下层膜; 在抗蚀剂下层膜的上表面侧形成含硅膜; 并用碱性水溶液除去至少一部分抗蚀剂下层膜和至少一部分含硅膜。 优选地，图案形成方法还包括在形成含硅膜之后并且在除去抗蚀剂下层膜和含硅膜之前，在含硅膜的上表面侧上形成抗蚀剂图案 并使用抗蚀剂图案作为掩模蚀刻含硅膜。