公开(公告)号：US20200040282A1

公开(公告)日：2020-02-06

申请号：US16595899

申请日：2019-10-08

Applicant: JSR CORPORATION

Inventor： Shun AOKI ,  Kan-go CHUNG ,  Tomohiro MATSUKI ,  Tatsuya SAKAI ,  Kenji MOCHIDA ,  Yuushi MATSUMURA

IPC: C11D3/20 ,  H01L21/02 ,  C11D1/00

Abstract: A composition for cleaning a semiconductor substrate contains: a novolak resin; an organic acid not being a polymeric compound; and a solvent. A solid content concentration of the composition is no greater than 20% by mass. The organic acid is preferably a carboxylic acid. The carboxylic acid is preferably a monocarboxylic acid, polycarboxylic acid or a combination thereof. The molecular weight of the organic acid is preferably from 50 to 500. The content of the organic acid with respect to 10 parts by mass of the novolak resin is preferably from 0.001 parts by mass to 10 parts by mass. The solvent includes preferably an ether solvent, an alcohol solvent, or a combination thereof. The proportion of the ether solvent, the alcohol solvent, or the combination thereof in the solvent is preferably no less than 50% by mass.

公开(公告)号：US20190264035A1

公开(公告)日：2019-08-29

申请号：US16388267

申请日：2019-04-18

Applicant: JSR CORPORATION

Inventor： Shun AOKI ,  Kang-go CHUNG ,  Yuushi MATSUMURA ,  Tomohiro MATSUKI ,  Yoshio TAKIMOTO

IPC: C09D5/00 ,  C09D161/06 ,  C09D161/18 ,  C09D161/34 ,  C09D125/06 ,  C09D161/12 ,  C09D125/18 ,  H01L21/02 ,  H01L21/311

Abstract: A substrate-treating method includes applying a treatment agent directly or indirectly on one face of a substrate to form a substrate pattern collapse-inhibitory film. The substrate includes a pattern on the one face. The substrate pattern collapse-inhibitory film is removed by dry etching after forming the substrate pattern collapse-inhibitory film. The treatment agent includes a compound including an aromatic ring, and a hetero atom-containing group that bonds to the aromatic ring; and a solvent.

公开(公告)号：US20170003595A1

公开(公告)日：2017-01-05

申请号：US15267923

申请日：2016-09-16

Applicant: JSR CORPORATION

Inventor： Shun AOKI ,  Hiromitsu Tanaka ,  Goji Wakamaytsu ,  Yoshio Takimoto ,  Masayoshi Ishikawa ,  Toru Kimura

IPC: G03F7/11 ,  G03F7/40 ,  C09D161/14

CPC classification number: G03F7/11 ,  C07C217/18 ,  C07C279/08 ,  C08G8/04 ,  C08G8/20 ,  C08G8/36 ,  C08L61/06 ,  C09D161/14 ,  C09D183/04 ,  G03F7/075 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/26 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40 ,  G03F7/405 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02057 ,  H01L21/0274 ,  H01L21/30604 ,  H01L21/3081 ,  Y02P20/582

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.

Abstract translation: 图案形成方法包括：在基板的上表面侧上形成抗蚀剂下层膜; 在抗蚀剂下层膜的上表面侧形成含硅膜; 并用碱性水溶液除去至少一部分抗蚀剂下层膜和至少一部分含硅膜。 优选地，图案形成方法还包括在形成含硅膜之后并且在除去抗蚀剂下层膜和含硅膜之前，在含硅膜的上表面侧上形成抗蚀剂图案 并使用抗蚀剂图案作为掩模蚀刻含硅膜。