公开(公告)号：US10234762B2

公开(公告)日：2019-03-19

申请号：US15267840

申请日：2016-09-16

Applicant: JSR CORPORATION

Inventor： Masayoshi Ishikawa ,  Hiromitsu Tanaka ,  Tomoharu Kawazu ,  Junya Suzuki ,  Tomoaki Seko ,  Yoshio Takimoto

IPC: G03F7/36 ,  G03F7/09 ,  H01L21/311 ,  G03F7/075 ,  G03F7/42 ,  G03F7/16 ,  G03F7/40 ,  H01L21/027

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or —OR2, and R2 represents a monovalent organic group. SiX4  (1)

公开(公告)号：US10078265B2

公开(公告)日：2018-09-18

申请号：US15267923

申请日：2016-09-16

Applicant: JSR CORPORATION

Inventor： Shun Aoki ,  Hiromitsu Tanaka ,  Goji Wakamatsu ,  Yoshio Takimoto ,  Masayoshi Ishikawa ,  Toru Kimura

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/38 ,  G03F7/075 ,  G03F7/32 ,  C07C279/08 ,  H01L21/308 ,  H01L21/027 ,  H01L21/02 ,  C07C217/18 ,  H01L21/306 ,  C08L61/06 ,  C08G8/04 ,  G03F7/26 ,  C08G8/20 ,  C08G8/36 ,  C09D161/14 ,  C09D183/04 ,  G03F7/40

CPC classification number: G03F7/11 ,  C07C217/18 ,  C07C279/08 ,  C08G8/04 ,  C08G8/20 ,  C08G8/36 ,  C08L61/06 ,  C09D161/14 ,  C09D183/04 ,  G03F7/075 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/26 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40 ,  G03F7/405 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02057 ,  H01L21/0274 ,  H01L21/30604 ,  H01L21/3081 ,  Y02P20/582

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.

公开(公告)号：US20170003595A1

公开(公告)日：2017-01-05

申请号：US15267923

申请日：2016-09-16

Applicant: JSR CORPORATION

Inventor： Shun AOKI ,  Hiromitsu Tanaka ,  Goji Wakamaytsu ,  Yoshio Takimoto ,  Masayoshi Ishikawa ,  Toru Kimura

IPC: G03F7/11 ,  G03F7/40 ,  C09D161/14

CPC classification number: G03F7/11 ,  C07C217/18 ,  C07C279/08 ,  C08G8/04 ,  C08G8/20 ,  C08G8/36 ,  C08L61/06 ,  C09D161/14 ,  C09D183/04 ,  G03F7/075 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/26 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40 ,  G03F7/405 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02057 ,  H01L21/0274 ,  H01L21/30604 ,  H01L21/3081 ,  Y02P20/582

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.

Abstract translation: 图案形成方法包括：在基板的上表面侧上形成抗蚀剂下层膜; 在抗蚀剂下层膜的上表面侧形成含硅膜; 并用碱性水溶液除去至少一部分抗蚀剂下层膜和至少一部分含硅膜。 优选地，图案形成方法还包括在形成含硅膜之后并且在除去抗蚀剂下层膜和含硅膜之前，在含硅膜的上表面侧上形成抗蚀剂图案 并使用抗蚀剂图案作为掩模蚀刻含硅膜。

公开(公告)号：US10036954B2

公开(公告)日：2018-07-31

申请号：US15267923

申请日：2016-09-16

Applicant: JSR CORPORATION

Inventor： Shun Aoki ,  Hiromitsu Tanaka ,  Goji Wakamatsu ,  Yoshio Takimoto ,  Masayoshi Ishikawa ,  Toru Kimura

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/38 ,  G03F7/075 ,  G03F7/32 ,  C07C279/08 ,  H01L21/308 ,  H01L21/027 ,  H01L21/02 ,  C07C217/18 ,  H01L21/306 ,  C08L61/06 ,  C08G8/04 ,  G03F7/26 ,  C08G8/20 ,  C08G8/36 ,  C09D161/14 ,  C09D183/04 ,  G03F7/40

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.