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    PATTERN-FORMING METHOD
    3.
    发明申请
    PATTERN-FORMING METHOD 审中-公开
    图案形成方法

    公开(公告)号：US20170003592A1

    公开(公告)日：2017-01-05

    申请号：US15267840

    申请日：2016-09-16

    Applicant: JSR CORPORATION

    Inventor： Masayoshi ISHIKAWA ,  Hiromitsu Tanaka ,  Tomoharu Kawazu ,  Junya Suzuki ,  Tomoaki Seko ,  Yoshio Takimoto

    IPC: G03F7/09 ,  H01L21/311 ,  G03F7/075 ,  H01L21/027 ,  G03F7/40 ,  G03F7/16

    CPC classification number: G03F7/094 ,  G03F7/0752 ,  G03F7/16 ,  G03F7/405 ,  G03F7/425 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/31111 ,  H01L21/31144

    Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or —OR2, and R2 represents a monovalent organic group. SiX4   (1)

    Abstract translation: 本发明是一种图案形成方法，其包括：在基板的一个表面上形成抗蚀剂下层膜的步骤; 在所述抗蚀剂下层膜的表面上形成含硅膜的步骤，所述表面位于所述基板侧表面的相反侧; 以及使用碱性水溶液除去含硅膜的工序。 该图案形成方法不包括在含硅膜形成步骤之后和含硅膜去除步骤之前使用含有酸或氟化合物的处理液来处理含硅膜的步骤。 优选含硅膜由含有式（1）表示的化合物的组合物的水解缩合物形成为全部硅化合物的60摩尔％以上的量。 SiX4（1）（式（1）中，X表示卤素原子或-OR2，R2表示一价有机基团。

    Composition for forming resist underlayer film, and pattern-forming method
    5.
    发明授权
    Composition for forming resist underlayer film, and pattern-forming method 有权
    用于形成抗蚀剂下层膜的组合物和图案形成方法

    公开(公告)号：US09268229B2

    公开(公告)日：2016-02-23

    申请号：US13853131

    申请日：2013-03-29

    Applicant: JSR CORPORATION

    Inventor： Hiromitsu Tanaka ,  Junya Suzuki ,  Masayuki Motonari ,  Tooru Kimura

    IPC: G03F7/09 ,  G03F7/004 ,  G03F7/075 ,  H01L21/312

    CPC classification number: G03F7/094 ,  G03F7/004 ,  G03F7/075 ,  G03F7/0752

    Abstract: A composition for forming a resist underlayer film includes a polysiloxane, and a solvent composition. The solvent composition includes an organic solvent which includes a compound represented by the following formula (1) or a carbonate compound and which has a standard boiling point of no less than 150.0° C. R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or an acyl group having 1 to 4 carbon atoms. R3 represents a hydrogen atom or a methyl group. n is an integer of 1 to 4. In a case where n is no less than 2, a plurality of R3s are identical or different.

    Abstract translation: 用于形成抗蚀剂下层膜的组合物包括聚硅氧烷和溶剂组合物。 溶剂组合物包括含有由下式（1）表示的化合物或碳酸酯化合物的标准沸点不低于150.0℃的有机溶剂.R 1和R 2各自独立地表示氢原子，烷基 具有1至4个碳原子的基团或具有1至4个碳原子的酰基。 R3表示氢原子或甲基。 n为1〜4的整数。在n为2以上的情况下，多个R3相同或不同。

    Method for forming resist pattern, and composition for forming resist underlayer film
    6.
    发明授权
    Method for forming resist pattern, and composition for forming resist underlayer film 有权
    形成抗蚀剂图案的方法和用于形成抗蚀剂下层膜的组合物

    公开(公告)号：US08956807B2

    公开(公告)日：2015-02-17

    申请号：US13630245

    申请日：2012-09-28

    Applicant: JSR Corporation

    Inventor： Hiromitsu Tanaka ,  Kazunori Takanashi ,  Shinya Minegishi ,  Takashi Mori ,  Tomoaki Seko ,  Jyunya Suzuki

    IPC: G03F7/11 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32

    CPC classification number: G03F7/11 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/091 ,  G03F7/325

    Abstract: A resist pattern-forming method capable of forming a resist pattern excellent in pattern collapse resistance in the case of development with the organic solvent in multilayer resist processes. The method has the steps of: (1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film; (2) providing a resist film on the resist underlayer film using a photoresist composition; (3) exposing the resist film; and (4) developing the exposed resist film using a developer solution containing no less than 80% by mass of an organic solvent, in which the composition for forming a resist underlayer film contains (A) a component that includes a polysiloxane chain and that has a carboxyl group, a group that can generate a carboxyl group by an action of an acid, an acid anhydride group or a combination thereof.

    Abstract translation: 一种抗蚀剂图案形成方法，其能够形成在多层抗蚀剂工艺中用有机溶剂显影的情况下图案抗塌陷性优异的抗蚀剂图案。 该方法具有以下步骤：（1）使用形成抗蚀剂下层膜的组合物在基板上形成抗蚀剂下层膜; （2）使用光致抗蚀剂组合物在抗蚀剂下层膜上提供抗蚀剂膜; （3）曝光抗蚀膜; （4）使用含有不少于80质量％的有机溶剂的显影剂溶液显影曝光的抗蚀剂膜，其中形成抗蚀剂下层膜的组合物含有（A）包含聚硅氧烷链的组分，并且具有 羧基，可以通过酸，酸酐基或其组合产生羧基的基团。

    Resist pattern-forming method
    7.
    发明授权
    Resist pattern-forming method 有权
    抗蚀图案形成方法

    公开(公告)号：US08993223B2

    公开(公告)日：2015-03-31

    申请号：US14158160

    申请日：2014-01-17

    Applicant: JSR Corporation

    Inventor： Yusuke Anno ,  Takashi Mori ,  Hirokazu Sakakibara ,  Taiichi Furukawa ,  Kazunori Takanashi ,  Hiromitsu Tanaka ,  Shin-ya Minegishi

    IPC: G03F7/26 ,  G03F7/20 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G03F7/32

    CPC classification number: G03F7/16 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/20 ,  G03F7/30 ,  G03F7/325

    Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

    Abstract translation: 抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。 将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。 辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。 抗蚀剂膜被曝光。 使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

    Pattern-forming method
    8.
    发明授权
    Pattern-forming method 有权

    公开(公告)号：US10234762B2

    公开(公告)日：2019-03-19

    申请号：US15267840

    申请日：2016-09-16

    Applicant: JSR CORPORATION

    Inventor： Masayoshi Ishikawa ,  Hiromitsu Tanaka ,  Tomoharu Kawazu ,  Junya Suzuki ,  Tomoaki Seko ,  Yoshio Takimoto

    IPC: G03F7/36 ,  G03F7/09 ,  H01L21/311 ,  G03F7/075 ,  G03F7/42 ,  G03F7/16 ,  G03F7/40 ,  H01L21/027

    Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or —OR2, and R2 represents a monovalent organic group. SiX4  (1)

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