公开(公告)号：US20150050205A1

公开(公告)日：2015-02-19

申请号：US14531152

申请日：2014-11-03

Applicant: JSR CORPORATION

Inventor： Hideki NISHIMURA ,  Kouji SUMIYA ,  Yasuo MATSUKI

IPC: C01G51/02

CPC classification number: C01G51/02 ,  C23C16/16 ,  C23C16/4481 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76873

Abstract: A container containing a cobalt carbonyl complex and a gas that contains carbon monoxide, and a cobalt carbonyl complex composition comprising a cobalt carbonyl complex and a solvent, wherein the concentration of carbon monoxide dissolved in the solvent is 0.001 to 1 wt %.Since the cobalt carbonyl complex contained in the above container or the above composition can retain its sublimation properties for a long time without being converted into a stable complex, when a cobalt film is formed by chemical vapor deposition using the container and the composition, a high-quality film can be formed by a simple process, and the production cost of the cobalt film can be reduced due to high use efficiency of the precursor.

公开(公告)号：US20150291441A1

公开(公告)日：2015-10-15

申请号：US14750396

申请日：2015-06-25

Applicant: JSR CORPORATION

Inventor： Hideki NISHIMURA ,  Kouji SUMIYA ,  Yasuo MATSUKI

IPC: C01G51/02 ,  B65D85/00

CPC classification number: C01G51/02 ,  C23C16/16 ,  C23C16/4481 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76873

Abstract: A container containing a cobalt carbonyl complex and a gas that contains carbon monoxide, and a cobalt carbonyl complex composition comprising a cobalt carbonyl complex and a solvent, wherein the concentration of carbon monoxide dissolved in the solvent is 0.001 to 1 wt %.Since the cobalt carbonyl complex contained in the above container or the above composition can retain its sublimation properties for a long time without being converted into a stable complex, when a cobalt film is formed by chemical vapor deposition using the container and the composition, a high-quality film can be formed by a simple process, and the production cost of the cobalt film can be reduced due to high use efficiency of the precursor.

Abstract translation: 含有羰基钴络合物和含有一氧化碳的气体的容器，以及包含羰基钴络合物和溶剂的羰基钴络合物组合物，其中溶解在溶剂中的一氧化碳的浓度为0.001〜1重量％。 由于上述容器中所含的羰基钴络合物或上述组合物长时间保持其升华性能而不会转化成稳定的络合物，所以当通过使用容器和组合物的化学气相沉积形成钴膜时， 可以通过简单的工艺形成均质膜，并且由于前体的高使用效率，可以降低钴膜的制造成本。

公开(公告)号：US20140134331A1

公开(公告)日：2014-05-15

申请号：US14159444

申请日：2014-01-21

Applicant: JSR CORPORATION

Inventor： Tatsuya SAKAI ,  Hideki NISHIMURA ,  Masahiro YAMAMOTO ,  Hisashi NAKAGAWA ,  Ryuuichi SAITOU ,  Hideyuki AOKI ,  Tsuyoshi FURUKAWA

IPC: C23C16/06

CPC classification number: C23C16/06 ,  C23C16/18 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/76877

Abstract: Provided is a method for producing a substrate with a metal body. This method provides excellent film-forming properties (reflectance and adhesion), is easy to be used on a large substrate, and can be carried out at a low cost. The method includes the steps of: (A) heating a complex to a first temperature so as to generate a vapor of the complex; and (B) contacting the vapor with a substrate heated to a second temperature that is not higher than the first temperature so as to form a metal body containing a central metal of the complex, either in uncombined form or as a compound thereof (exclusive of the complex), on at least part of a surface of the substrate. The second temperature in step (B) is lower than the decomposition temperature of the complex. The central metal of the complex is aluminum or titanium.

Abstract translation: 提供一种用金属体制造衬底的方法。 该方法提供优异的成膜性（反射率和粘附性），易于在大的基板上使用，并且可以以低成本进行。 该方法包括以下步骤：（A）将络合物加热至第一温度以产生复合物的蒸气; 和（B）使蒸气与加热到不高于第一温度的第二温度的基底接触，以形成含有复合物的中心金属的金属体，或者以未组合的形式或作为其化合物（不包括 该复合物）在基材的表面的至少一部分上。 步骤（B）中的第二温度低于络合物的分解温度。 复合体的中心金属是铝或钛。