公开(公告)号：US20230002640A1

公开(公告)日：2023-01-05

申请号：US17781712

申请日：2020-11-17

Applicant: JSR CORPORATION

Inventor： Kouhei Nishimura ,  Yuuya Yamada ,  Shuuhei Nakamura ,  Pengyu Wang

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321 ,  H01L21/3105

Abstract: Provided are a composition for chemical mechanical polishing and a method for polishing allowing a tungsten film- or silicon nitride film-containing semiconductor substrate to be polished at a high speed, while also enabling a reduction in the occurrence of a surface defect in the polished face after polishing. A composition for chemical mechanical polishing according to the present invention comprises (A) abrasive grains containing titanium nitride and (B) a liquid medium, wherein the absolute value of the zeta-potential of said (A) component in the composition for chemical mechanical polishing is 8 mV or higher.