公开(公告)号：US20240030030A1

公开(公告)日：2024-01-25

申请号：US18374041

申请日：2023-09-28

Applicant: JSR CORPORATION

Inventor： Ken MARUYAMA ,  Takayoshi ABE ,  Kazunori SAKAI

IPC: H01L21/027 ,  G03F7/004

CPC classification number: H01L21/0275 ,  G03F7/0047 ,  H01L21/32139

Abstract: A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition for forming a resist underlayer film. A metal-containing resist film is formed on the resist underlayer film. The metal-containing resist film is exposed. A part of the exposed metal-containing resist film is volatilized to form a resist pattern.

公开(公告)号：US20240105451A1

公开(公告)日：2024-03-28

申请号：US18509611

申请日：2023-11-15

Applicant: JSR CORPORATION

Inventor： Eiji YONEDA ,  Takayoshi ABE ,  Hiroyuki MIYAUCHI

IPC: H01L21/027 ,  G03F7/20 ,  G03F7/32

CPC classification number: H01L21/0277 ,  G03F7/2004 ,  G03F7/32

Abstract: A method for manufacturing a semiconductor substrate, includes: directly or indirectly applying a composition for forming a resist underlayer film to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer; an acid generating agent; and a solvent. The resist underlayer film has a film thickness of 6 nm or less.