公开(公告)号：US20240255852A1

公开(公告)日：2024-08-01

申请号：US18435001

申请日：2024-02-07

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Masato DOBASHI ,  Satoshi DEI ,  Kengo EHARA ,  Sho YOSHINAKA ,  Eiji YONEDA ,  Takashi KATAGIRI

IPC: G03F7/11 ,  C08F12/08 ,  C08F12/20 ,  C08F12/24 ,  C08F12/26 ,  C08F12/30 ,  C08F26/06 ,  C09D125/08 ,  C09D125/18 ,  C09D139/04

CPC classification number: G03F7/11 ,  C08F12/08 ,  C08F12/20 ,  C08F12/24 ,  C08F12/26 ,  C08F12/30 ,  C08F26/06 ,  C09D125/08 ,  C09D125/18 ,  C09D139/04

Abstract: A method for manufacturing a semiconductor substrate, includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film. A composition for forming a resist film is applied to the resist underlayer film to form a resist film. The resist film is exposed to radiation. The exposed resist film is developed. The composition for forming a resist underlayer film includes: a polymer having a sulfonic acid ester structure; and a solvent.

公开(公告)号：US20240288773A1

公开(公告)日：2024-08-29

申请号：US18636755

申请日：2024-04-16

Applicant: JSR CORPORATION

Inventor： Masato DOBASHI ,  Hiroyuki KOMATSU ,  Eiji YONEDA ,  Satoshi DEI ,  Kengo EHARA ,  Sho YOSHINAKA ,  Takashi KATAGIRI

IPC: G03F7/11 ,  G03F7/075 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/0752 ,  G03F7/322 ,  H01L21/0275

Abstract: A method includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer including a partial structure represented by formula (i); and a solvent. In the formula (i), Y1 is a sulfonyl group, a carbonyl group, or an alkanediyl group; Y2 is a sulfonyl group, a carbonyl group, or a single bond; when Y1 is an alkanediyl group, Y2 is a sulfonyl group or a carbonyl group, and when Y2 is a single bond, Y1 is a sulfonyl group or a carbonyl group; R1 is a monovalent organic group having 1 to 20 carbon atoms.

公开(公告)号：US20240142876A1

公开(公告)日：2024-05-02

申请号：US18528951

申请日：2023-12-05

Applicant: JSR CORPORATION

Inventor： Hiroyuki MIYAUCHI ,  Satoshi DEI ,  Ryotaro TANAKA ,  Eiji YONEDA ,  Sho YOSHINAKA

IPC: G03F7/11 ,  G03F7/029 ,  G03F7/20 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/029 ,  G03F7/2004 ,  G03F7/322 ,  G03F7/327 ,  H01L21/0275

Abstract: A method for manufacturing a semiconductor substrate, includes: directly or indirectly applying a composition for forming a resist underlayer film to a substrate to form a resist under film directly or indirectly on the substrate; applying a composition for forming a resist film to the resist underlayer film to form a resist film on the resist underlayer film; exposing the resist film to radiation; and developing the exposed resist film by a developer. The composition for forming a resist underlayer film includes: a polymer; an onium salt that is capable of generating at least one polar group selected from the group consisting of a carboxy group and a hydroxy group by radiation or heat; and a solvent.

公开(公告)号：US20190002717A1

公开(公告)日：2019-01-03

申请号：US16123473

申请日：2018-09-06

Applicant: JSR CORPORATION

Inventor： Eiji YONEDA ,  Hiroshi KAWAI ,  Keisuke TSUKIMAWASHI ,  Masahumi WAKAMORI ,  Motohisa AZECHI

IPC: C09D11/328 ,  C09D11/03 ,  C09D11/107 ,  D06P5/30 ,  D06P1/00

Abstract: The ink contains: an ink agent containing a polymer having a chromophore; and a binder resin. The ink preferably further contains water, an antiseptic agent, and/or a hydrotropic agent. The polymer is preferably in a particulate form. The textile printing method includes discharging droplets of the ink to attach the droplets onto a woven fabric and heating the woven fabric obtained after the discharging. The printed textile of the present invention is obtained by the aforementioned textile printing method. The ink agent for textile of the present invention contains a polymer having a chromophore.

公开(公告)号：US20250110407A1

公开(公告)日：2025-04-03

申请号：US18910163

申请日：2024-10-09

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Masato DOBASHI ,  Daiki TATSUBO ,  Sho YOSHINAKA ,  Shunpei AKITA ,  Satoshi DEI ,  Eiji YONEDA ,  Kengo EHARA

IPC: G03F7/039 ,  C08F220/30 ,  C08F220/38 ,  C08G61/12 ,  G03F7/00 ,  G03F7/004 ,  G03F7/038 ,  H01L21/027

Abstract: A method for manufacturing a semiconductor substrate includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The composition for forming a resist underlayer film includes a polymer and a solvent. The polymer includes a repeating unit (1) which includes an organic sulfonic acid anion moiety and an onium cation moiety.

公开(公告)号：US20240105451A1

公开(公告)日：2024-03-28

申请号：US18509611

申请日：2023-11-15

Applicant: JSR CORPORATION

Inventor： Eiji YONEDA ,  Takayoshi ABE ,  Hiroyuki MIYAUCHI

IPC: H01L21/027 ,  G03F7/20 ,  G03F7/32

CPC classification number: H01L21/0277 ,  G03F7/2004 ,  G03F7/32

Abstract: A method for manufacturing a semiconductor substrate, includes: directly or indirectly applying a composition for forming a resist underlayer film to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer; an acid generating agent; and a solvent. The resist underlayer film has a film thickness of 6 nm or less.