公开(公告)号：US20240142876A1

公开(公告)日：2024-05-02

申请号：US18528951

申请日：2023-12-05

Applicant: JSR CORPORATION

Inventor： Hiroyuki MIYAUCHI ,  Satoshi DEI ,  Ryotaro TANAKA ,  Eiji YONEDA ,  Sho YOSHINAKA

IPC: G03F7/11 ,  G03F7/029 ,  G03F7/20 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/029 ,  G03F7/2004 ,  G03F7/322 ,  G03F7/327 ,  H01L21/0275

Abstract: A method for manufacturing a semiconductor substrate, includes: directly or indirectly applying a composition for forming a resist underlayer film to a substrate to form a resist under film directly or indirectly on the substrate; applying a composition for forming a resist film to the resist underlayer film to form a resist film on the resist underlayer film; exposing the resist film to radiation; and developing the exposed resist film by a developer. The composition for forming a resist underlayer film includes: a polymer; an onium salt that is capable of generating at least one polar group selected from the group consisting of a carboxy group and a hydroxy group by radiation or heat; and a solvent.

公开(公告)号：US20240231231A1

公开(公告)日：2024-07-11

申请号：US18440124

申请日：2024-02-13

Applicant: JSR CORPORATION

Inventor： Daiki TATSUBO ,  Tomoharu KAWAZU ,  Hiroyuki MIYAUCHI ,  Yuya HAYASHI ,  Takashi KATAGIRI ,  Ryotaro TANAKA

IPC: G03F7/11 ,  C09D161/06 ,  C09D161/12 ,  H01L21/308 ,  H01L21/311

CPC classification number: G03F7/11 ,  C09D161/06 ,  C09D161/12 ,  H01L21/3081 ,  H01L21/31116

Abstract: A method for forming a resist underlayer film includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a coating film. The coating film is heated at a heating temperature of higher than 450° C. and 600° C. or lower in an atmosphere having an oxygen concentration of less than 0.01% by volume. The composition for forming a resist underlayer film includes: a compound including an aromatic ring; a polymer which thermally decomposes at the heating temperature in heating the coating film, and which is other than the compound; and a solvent. The compound has a molecular weight of 400 or more. A content of the polymer is less than a content of the compound in the composition for forming a resist underlayer film.

公开(公告)号：US20240105451A1

公开(公告)日：2024-03-28

申请号：US18509611

申请日：2023-11-15

Applicant: JSR CORPORATION

Inventor： Eiji YONEDA ,  Takayoshi ABE ,  Hiroyuki MIYAUCHI

IPC: H01L21/027 ,  G03F7/20 ,  G03F7/32

CPC classification number: H01L21/0277 ,  G03F7/2004 ,  G03F7/32

Abstract: A method for manufacturing a semiconductor substrate, includes: directly or indirectly applying a composition for forming a resist underlayer film to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer; an acid generating agent; and a solvent. The resist underlayer film has a film thickness of 6 nm or less.

公开(公告)号：US20230341778A1

公开(公告)日：2023-10-26

申请号：US18209751

申请日：2023-06-14

Applicant: JSR CORPORATION

Inventor： Naoya NOSAKA ,  Kengo EHARA ,  Hiroki NAKATSU ,  Masato DOBASHI ,  Hiroyuki MIYAUCHI

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/38 ,  H01L21/311

CPC classification number: G03F7/11 ,  G03F7/094 ,  G03F7/38 ,  H01L21/31138 ,  H01L21/31144

Abstract: A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition. The composition includes a compound and a solvent. The compound includes: at least one nitrogen-containing ring structure selected from the group consisting of a pyridine ring structure and a pyrimidine ring structure; and a partial structure represented by formula (1-1) or (1-2). X1 and X2 are each independently a group represented by formula (i), (ii), (iii), or (iv); * is a bond with a moiety of the compound other than the partial structure represented by formula (1-1) or (1-2); and Ar11 and Ar12 are each independently a substituted or unsubstituted aromatic ring having 5 to 20 ring members that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2).

公开(公告)号：US20230416451A1

公开(公告)日：2023-12-28

申请号：US18239373

申请日：2023-08-29

Applicant: JSR CORPORATION

Inventor： Shuhei YAMADA ,  Shinya ABE ,  Takashi TSUJI ,  Kanako UEDA ,  Hiroki NAKATSU ,  Hiroyuki MIYAUCHI

IPC: C08G61/02 ,  G03F7/004 ,  G03F7/039 ,  G03F7/038

CPC classification number: C08G61/02 ,  G03F7/0048 ,  G03F7/0388 ,  G03F7/0382 ,  G03F7/0397

Abstract: A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a group represented by formula (1-1) or (1-2). In the formulas (1-1) and (1-2), X1 and X2 are each independently a group represented by formula (i), (ii), (iii) or (iv); * is a bond with the carbon atom in the formula (1); and Ar2, Ar3 and Ar4 are each independently a substituted or unsubstituted aromatic ring having 6 to 20 ring atoms that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2).

公开(公告)号：US20160104893A1

公开(公告)日：2016-04-14

申请号：US14893875

申请日：2014-05-19

Applicant: JSR CORPORATION

Inventor： Kazuaki ITOU ,  Tomotaka SHINODA ,  Hiroyuki MIYAUCHI

IPC: H01M4/62 ,  H01M2/16 ,  H01M4/13 ,  H01M10/0525

CPC classification number: H01M4/628 ,  H01G11/38 ,  H01G11/52 ,  H01M2/1653 ,  H01M2/166 ,  H01M2/1673 ,  H01M2/1686 ,  H01M4/13 ,  H01M4/622 ,  H01M4/623 ,  H01M10/0525 ,  H01M10/4235 ,  Y02E60/13

Abstract: An electrical storage device composition can produce an electrode and a separator that exhibit excellent blocking resistance, and can effectively prevent displacement (i.e., achieves moderate blocking) when stacking an electrode and a separator. The electrical storage device composition includes a binder, an anti-blocking agent, and a liquid medium, the content (M1 parts by mass) of the binder and the content (M2 parts by mass) of the anti-blocking agent in the electrical storage device composition satisfying the relationship “1

Abstract translation: 电存储装置组合物可以产生显示出优异的抗粘连性的电极和隔膜，并且可以有效地防止在层叠电极和隔板时的位移（即达到中等阻塞）。 电气存储装置组合物包括粘合剂，防粘剂和液体介质，粘合剂的含量（M1质量份）和电储存器中的防粘连剂的含量（M2质量份） 器件组成满足关系“1

公开(公告)号：US20140030592A1

公开(公告)日：2014-01-30

申请号：US14039934

申请日：2013-09-27

Applicant: JSR CORPORATION

Inventor： Maki MAEGAWA ,  Tatsuaki HONDA ,  Tatsuya ABE ,  Hiroyuki MIYAUCHI

IPC: H01M4/62 ,  H01G11/48

CPC classification number: H01M4/623 ,  C08K5/01 ,  C08K5/03 ,  H01G11/28 ,  H01G11/30 ,  H01G11/38 ,  H01G11/48 ,  H01G11/50 ,  H01M4/131 ,  H01M4/133 ,  Y02E60/13 ,  C08L51/003 ,  C08L33/04

Abstract: An electrode binder composition is used to produce an electrode used for an electrical storage device, and includes (A) a polymer, (B) a compound represented by the following general formula (1), and (C) a liquid medium, the polymer (A) being fluorine-containing polymer particles or diene polymer particles, and a concentration of the compound (B) in the electrode binder composition being 5 to 500 ppm. wherein R1 and R2 independently represent a hydrogen atom, a halogen atom, or a monovalent alkyl group, and n is an integer from 0 to 5.

Abstract translation: 使用电极粘合剂组合物来制造用于蓄电装置的电极，并且包括（A）聚合物，（B）由以下通式（1）表示的化合物和（C）液体介质，所述聚合物 （A）为含氟聚合物粒子或二烯系聚合物粒子，电极粘合剂组合物中化合物（B）的浓度为5〜500ppm。 其中R1和R2独立地表示氢原子，卤素原子或一价烷基，n是0-5的整数。

公开(公告)号：US20130209875A1

公开(公告)日：2013-08-15

申请号：US13766089

申请日：2013-02-13

Applicant: JSR CORPORATION

Inventor： Maki MAEGAWA ,  Tatsuaki HONDA ,  Tatsuya ABE ,  Hiroyuki MIYAUCHI

IPC: H01G11/48 ,  H01M4/62

CPC classification number: H01M4/623 ,  C08K5/01 ,  C08K5/03 ,  H01G11/28 ,  H01G11/30 ,  H01G11/38 ,  H01G11/48 ,  H01G11/50 ,  H01M4/131 ,  H01M4/133 ,  Y02E60/13 ,  C08L51/003 ,  C08L33/04

Abstract: An electrode binder composition is used to produce an electrode used for an electrical storage device, and includes (A) a polymer, (B) a compound represented by the following general formula (1), and (C) a liquid medium, the polymer (A) being fluorine-containing polymer particles or diene polymer particles, and a concentration of the compound (B) in the electrode binder composition being 5 to 500 ppm. wherein R1 and R2 independently represent a hydrogen atom, a halogen atom, or a monovalent alkyl group, and n is an integer from 0 to 5.

Abstract translation: 使用电极粘合剂组合物来制造用于蓄电装置的电极，并且包括（A）聚合物，（B）由以下通式（1）表示的化合物和（C）液体介质，所述聚合物 （A）为含氟聚合物粒子或二烯系聚合物粒子，电极粘合剂组合物中化合物（B）的浓度为5〜500ppm。 其中R1和R2独立地表示氢原子，卤素原子或一价烷基，n是0-5的整数。