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公开(公告)号：US20240026525A1
公开(公告)日：2024-01-25
申请号：US18026437
申请日：2022-06-10
发明人： Shuhei Murata , Masaya Iwabuchi , Yusuke Sato
CPC分类号： C23C14/3414 , B23K20/023 , B23K20/02 , C22C9/06 , C22C21/06 , H01J37/3429 , B23K2101/34
摘要： A sputtering target comprised of a plurality of members including a target material and a base material, wherein the plurality of members includes a first member and a second member laminated to each other, wherein the first member contains Al, and the second member contains Cu, wherein at least one of the first member and the second member contains Mg, wherein the sputtering target includes an alloy layer containing Al and Cu between the first member and the second member, the alloy layer being in contact with the first member and the second member, and wherein the alloy layer further includes an Mg-containing layer containing 5.0 at % or more of Mg in at least a part of the alloy layer.
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公开(公告)号：US11193199B2
公开(公告)日：2021-12-07
申请号：US16082979
申请日：2017-03-07
发明人： Shuhei Murata
摘要： A sputtering target comprising a flat part and a tapered part on a sputter surface, wherein of the tapered part includes a crystal distortion having an average KAM value of 0.5° or more. It is possible to lower the ignition failure rate of ignition (plasma ignition), and start the sputter process stably. Because the downtime of the device can thereby be shortened, it is possible to contribute to the improvement in throughput and cost performance.
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公开(公告)号：US10685820B2
公开(公告)日：2020-06-16
申请号：US15889278
申请日：2018-02-06
摘要： A sputtering target formed from monocrystalline silicon is provided, wherein a sputter surface of the sputtering target is a plane inclined at an angle that exceeds 1° and is less than 10° from a {100} plane. The sputtering target formed from monocrystalline silicon provides a sputtering target which yields superior mechanical strength as well as exhibiting a sputter performance which is equivalent to that of a {100} plane. From a different perspective, in addition to superior mechanical strength, the monocrystalline silicon sputtering target yields superior particle characteristics, sputtering rate, crack resistance, surface shape uniformity and other characteristics.
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公开(公告)号：US20230132362A9
公开(公告)日：2023-04-27
申请号：US17425386
申请日：2020-01-15
发明人： Kengo Kaminaga , Keijiro Sugimoto , Yuki Yamada , Shuhei Murata
IPC分类号： C23C14/34
摘要： The disclosure is related to reducing the cost of sputtering target products. Provided is a sputtering target product wherein: the sputtering target product includes a target, a backing plate or backing tube, and insert material layer; at least a part of the non-sputtering side of the target is profiled so as to have protrusions and recesses that have plane symmetry; the insert material layer is formed so as to adhere closely to the profiled side, and the insert material is made of metal with specific gravity that is at least less than those of the metal constituting the target.
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公开(公告)号：US20220098723A1
公开(公告)日：2022-03-31
申请号：US17425386
申请日：2020-01-15
发明人： Kengo Kaminaga , Keijiro Sugimoto , Yuki Yamada , Shuhei Murata
IPC分类号： C23C14/34
摘要： The disclosure is related to reducing the cost of sputtering target products. Provided is a sputtering target product wherein: the sputtering target product includes a target, a backing plate or backing tube, and insert material layer; at least a part of the non-sputtering side of the target is profiled so as to have protrusions and recesses that have plane symmetry; the insert material layer is formed so as to adhere closely to the profiled side, and the insert material is made of metal with specific gravity that is at least less than those of the metal constituting the target.
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公开(公告)号：US20210040601A1
公开(公告)日：2021-02-11
申请号：US16979697
申请日：2019-03-12
发明人： Keijiro Sugimoto , Shuhei Murata
摘要： Provided is a sputtering target having a molybdenum content of 99.99% by mass or more, a relative density of 98% or more, and an average crystal grain diameter of 400 μm or less.
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公开(公告)号：US20210010149A1
公开(公告)日：2021-01-14
申请号：US17041229
申请日：2018-10-03
发明人： Shuhei Murata , Yoshimasa Koido , Takayuki Asano , Kengo Kaminaga
摘要： Provided is a novel anode for electroplating, which replaces the Cu anode and which is capable of suppressing plating defects. The Co anode has a number of particles with a grain size of 0.5 μm or more of 6000 particles/g or less, as measured by an in-liquid particle counter according to JIS B 9925 after dissolving the Co anode in dilute nitric acid having a nitric acid concentration of 20% by mass.
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公开(公告)号：US12054822B2
公开(公告)日：2024-08-06
申请号：US17425386
申请日：2020-01-15
发明人： Kengo Kaminaga , Keijiro Sugimoto , Yuki Yamada , Shuhei Murata
CPC分类号： C23C14/3414 , H01J37/3423
摘要： The disclosure is related to reducing the cost of sputtering target products. Provided is a sputtering target product wherein: the sputtering target product includes a target, a backing plate or backing tube, and insert material layer; at least a part of the non-sputtering side of the target is profiled so as to have protrusions and recesses that have plane symmetry; the insert material layer is formed so as to adhere closely to the profiled side, and the insert material is made of metal with specific gravity that is at least less than those of the metal constituting the target.
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公开(公告)号：US10984992B2
公开(公告)日：2021-04-20
申请号：US15575063
申请日：2016-05-18
摘要： A sputtering target comprising a flat part and a tapered part, wherein a machined groove for use in ignition is arranged on a sputtering surface of the target. With the sputtering target of the present invention, the ignition failure rate during ignition (plasma ignition) can be reduced, and the sputtering process can be started stably. It is thereby possible to shorten the downtime of the device, and consequently contribute to improved throughput and enhanced cost performance.
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公开(公告)号：US20180144912A1
公开(公告)日：2018-05-24
申请号：US15575063
申请日：2016-05-18
CPC分类号： H01J37/3423 , C23C14/34 , C23C14/3407 , H01J37/3417
摘要： A sputtering target comprising a flat part and a tapered part, wherein a machined groove for use in ignition is arranged on a sputtering surface of the target. With the sputtering target of the present invention, the ignition failure rate during ignition (plasma ignition) can be reduced, and the sputtering process can be started stably. It is thereby possible to shorten the downtime of the device, and consequently contribute to improved throughput and enhanced cost performance.
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