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公开(公告)号：US20210010149A1
公开(公告)日：2021-01-14
申请号：US17041229
申请日：2018-10-03
发明人： Shuhei Murata , Yoshimasa Koido , Takayuki Asano , Kengo Kaminaga
摘要： Provided is a novel anode for electroplating, which replaces the Cu anode and which is capable of suppressing plating defects. The Co anode has a number of particles with a grain size of 0.5 μm or more of 6000 particles/g or less, as measured by an in-liquid particle counter according to JIS B 9925 after dissolving the Co anode in dilute nitric acid having a nitric acid concentration of 20% by mass.
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公开(公告)号：US20170236696A1
公开(公告)日：2017-08-17
申请号：US15514634
申请日：2015-09-25
发明人： Kunihiro Oda , Takayuki Asano
IPC分类号： H01J37/34
CPC分类号： H01J37/3426 , C22C19/07 , C23C14/3414
摘要： A Co sputtering target having a purity of 99.99% to 99.999% and a Si content of 1 wtppm or less. Provided is a Co sputtering target capable of improving barrier properties and adhesiveness by suppressing conversion into highly reactive silicide by a reduction in the Si content in cobalt.
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公开(公告)号：US20170218502A1
公开(公告)日：2017-08-03
申请号：US15515457
申请日：2015-09-28
发明人： Takayuki Asano , Kunihiro Oda
摘要： Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. The present invention consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.
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公开(公告)号：US20190115196A1
公开(公告)日：2019-04-18
申请号：US16088118
申请日：2017-03-23
发明人： Kunihiro Oda , Takayuki Asano
摘要： Provided is a Ti—Nb alloy sputtering target containing 0.1 to 30 at % of Nb, the remainder of Ti and unavoidable impurities; and the Ti—Nb alloy sputtering target is characterized by having an oxygen content of 400 wtppm or less. Since the target in the present disclosure has a favorable surface texture with a low oxygen content and is readily processable due to the low hardness of the target, the Ti—Nb alloy sputtering target yields a superior effect of being able to suppress the generation of particles during sputtering.
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公开(公告)号：US11830711B2
公开(公告)日：2023-11-28
申请号：US15514634
申请日：2015-09-25
发明人： Kunihiro Oda , Takayuki Asano
CPC分类号： H01J37/3426 , C22C19/07 , C23C14/3414
摘要： A Co sputtering target having a purity of 99.99% to 99.999% and a Si content of 1 wtppm or less. Provided is a Co sputtering target capable of improving barrier properties and adhesiveness by suppressing conversion into highly reactive silicide by a reduction in the Si content in cobalt.
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公开(公告)号：US20210025049A1
公开(公告)日：2021-01-28
申请号：US16982125
申请日：2018-11-21
发明人： Takafumi Dasai , Takayuki Asano , Takeo Okabe
摘要： Provided is a tungsten silicide target that efficiently suppresses generation of particles during sputtering deposition. A tungsten silicide target having a two-phase structure of a WSi2 phase and a Si phase, wherein the tungsten silicide target is represented by a composition formula in an atomic ratio: WSix with X>2.0; wherein, when observing a sputtering surface, a ratio of a total area I1 of Si grains having an area per a Si grain of 63.6 μm2 or more to a total area S1 of the Si grains forming the Si phase (I1/S1) is 5% or less; and wherein a Weibull modulus of flexural strength is 2.1 or more.
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公开(公告)号：US10704137B2
公开(公告)日：2020-07-07
申请号：US15515457
申请日：2015-09-28
发明人： Takayuki Asano , Kunihiro Oda
IPC分类号： C23C14/34 , C22C27/00 , C22C27/02 , C22C27/04 , C22C27/06 , C22C14/00 , C22C22/00 , C22C19/07 , C22C5/04 , C22C19/03 , C22C1/04 , H01J37/34 , C23C14/16
摘要： Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. The present invention consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.
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公开(公告)号：US11837449B2
公开(公告)日：2023-12-05
申请号：US16088118
申请日：2017-03-23
发明人： Kunihiro Oda , Takayuki Asano
CPC分类号： H01J37/3426 , B22D7/005 , C22C1/02 , C22C14/00 , C22F1/002 , C22F1/183 , C23C14/3414
摘要： Provided is a Ti—Nb alloy sputtering target containing 0.1 to 30 at % of Nb, the remainder of Ti and unavoidable impurities; and the Ti—Nb alloy sputtering target is characterized by having an oxygen content of 400 wtppm or less. Since the target in the present disclosure has a favorable surface texture with a low oxygen content and is readily processable due to the low hardness of the target, the Ti—Nb alloy sputtering target yields a superior effect of being able to suppress the generation of particles during sputtering.
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公开(公告)号：US11046616B2
公开(公告)日：2021-06-29
申请号：US16493006
申请日：2018-01-22
发明人： Kunihiro Oda , Takayuki Asano
摘要： A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 μm or more per 80000 mm2 on the sputtering surface.
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公开(公告)号：US20200308692A1
公开(公告)日：2020-10-01
申请号：US16902382
申请日：2020-06-16
发明人： Takayuki Asano , Kunihiro Oda
IPC分类号： C23C14/34 , C22C27/00 , C22C27/02 , C22C27/04 , C22C27/06 , C22C14/00 , C22C22/00 , C22C19/07 , C22C5/04 , C22C19/03 , C22C1/04 , C23C14/16 , H01J37/34
摘要： Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. This consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.
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