公开(公告)号：US20080080845A1

公开(公告)日：2008-04-03

申请号：US11612370

申请日：2006-12-18

申请人： Jack Chen ,  Andrew D. Bailey ,  Ben Mooring ,  Stephen J. Cain

发明人： Jack Chen ,  Andrew D. Bailey ,  Ben Mooring ,  Stephen J. Cain

IPC分类号： G03B15/02

CPC分类号： H01L21/681 ,  H01L21/67259 ,  H01L21/67288

摘要： A bevel inspection module for capturing images of a substrate is provided. The module includes a rotational motor, which is attached to a substrate chuck and is configured to rotate the substrate chuck thereby allowing the substrate to revolve. The module further includes a camera and an optic enclosure, which is attached to the camera and is configured to rotate, enabling light to be directed toward the substrate. The camera is mounted from a camera mount, which is configured to enable the camera to rotate on a 180 degree plane allowing the camera to capture images of at least one of a top view, a bottom view, and a side view of the substrate. The module yet also includes a backlight arrangement, which is configured to provide illumination to the substrate, thereby enabling the camera to capture the images, which shows contrast between the substrate and a background.

摘要翻译： 提供了一种用于捕获基板的图像的斜面检查模块。 模块包括旋转马达，其连接到基板卡盘并且构造成旋转基板卡盘，从而允许基板旋转。 该模块还包括照相机和光学外壳，其附接到相机并且被配置为旋转，使得光能够被引向基板。 照相机从照相机安装座安装，照相机安装件被配置为使照相机能够在180度平面上旋转，允许照相机拍摄基板的顶视图，底视图和侧视图中的至少一个的图像。 该模块还包括背光布置，其被配置为向基板提供照明，从而使得相机能够捕获显示基板和背景之间的对比度的图像。

公开(公告)号：US08135485B2

公开(公告)日：2012-03-13

申请号：US12237155

申请日：2008-09-24

申请人： Jack Chen ,  Andrew D. Bailey, III ,  Ben Mooring ,  Stephen J Cain

发明人： Jack Chen ,  Andrew D. Bailey, III ,  Ben Mooring ,  Stephen J Cain

IPC分类号： H01L21/00 ,  G06F19/00 ,  G05B19/418 ,  G05B15/00 ,  B44C1/22 ,  G06K9/00

CPC分类号： H01L21/681 ,  H01L21/68

摘要： A method for aligning a substrate to a process center of a support mechanism is provided. The method includes determining substrate thickness after substrate processing at a plurality of orientations and at a plurality of radial distances from a geometric center of the substrate. The method also includes deriving a set of process rate values from substrate thickness and process duration. The method further includes creating for a process rate an off-centered plot, which represents a substantially concentric circle whose points are a circumference of the off-centered plot having substantially the first process rate. The method yet also includes applying a curve-fitting equation to the off-centered plot to determine a set of parameters. The method yet further includes teaching a set of robot arms the set of parameters, thereby enabling the set of robot arms to align another substrate that is supported by the support mechanism with the process center.

摘要翻译： 提供了一种将基板对准支撑机构的处理中心的方法。 该方法包括在基板处理之后确定基板厚度，该基板在多个取向并且距离基板的几何中心的多个径向距离处。 该方法还包括从衬底厚度和工艺持续时间导出一组工艺速率值。 该方法还包括为处理速率创建偏心图，其表示基本上同心的圆，其点是具有基本上第一处理速率的偏心图的圆周。 该方法还包括将曲线拟合方程应用于偏心图以确定一组参数。 该方法还包括向一组机器人手臂提供一组参数，从而使得该组机器人臂将由支撑机构支撑的另一个基板与处理中心对准。

公开(公告)号：US07486878B2

公开(公告)日：2009-02-03

申请号：US11612370

申请日：2006-12-18

申请人： Jack Chen ,  Andrew D Bailey, III ,  Ben Mooring ,  Stephen J. Cain

发明人： Jack Chen ,  Andrew D Bailey, III ,  Ben Mooring ,  Stephen J. Cain

IPC分类号： G03B15/00 ,  G03B15/03 ,  G03B17/00 ,  G01R13/26

CPC分类号： H01L21/681 ,  H01L21/67259 ,  H01L21/67288

摘要： A bevel inspection module for capturing images of a substrate is provided. The module includes a rotational motor, which is attached to a substrate chuck and is configured to rotate the substrate chuck thereby allowing the substrate to revolve. The module further includes a camera and an optic enclosure, which is attached to the camera and is configured to rotate, enabling light to be directed toward the substrate. The camera is mounted from a camera mount, which is configured to enable the camera to rotate on a 180 degree plane allowing the camera to capture images of at least one of a top view, a bottom view, and a side view of the substrate. The module yet also includes a backlight arrangement, which is configured to provide illumination to the substrate, thereby enabling the camera to capture the images, which shows contrast between the substrate and a background.

摘要翻译： 提供了一种用于捕获基板的图像的斜面检查模块。 模块包括旋转马达，其连接到基板卡盘并且构造成旋转基板卡盘，从而允许基板旋转。 该模块还包括照相机和光学外壳，其附接到相机并且被配置为旋转，使得光能够被引向基板。 照相机从照相机安装座安装，照相机安装件被配置为使照相机能够在180度平面上旋转，允许照相机拍摄基板的俯视图，底视图和侧视图中的至少一个的图像。 该模块还包括背光布置，其被配置为向基板提供照明，从而使得相机能够捕获显示基板和背景之间的对比度的图像。

公开(公告)号：US07479236B2

公开(公告)日：2009-01-20

申请号：US11612355

申请日：2006-12-18

申请人： Jack Chen ,  Andrew D Bailey, III ,  Ben Mooring ,  Stephen J. Cain

发明人： Jack Chen ,  Andrew D Bailey, III ,  Ben Mooring ,  Stephen J. Cain

IPC分类号： G01L21/30 ,  G05B15/00

CPC分类号： G05B19/41875 ,  G05B2219/37398 ,  G05B2219/45031 ,  G05B2219/50057 ,  Y02P90/22

摘要： A method for calculating a process center for a chuck in a processing chamber is provided. The method includes generating pre-processing and post-processing measurement data points, which is perform by measuring thickness of a film substrate at a set of orientations and a set of distances from a geometric center of the substrate. The method also includes comparing the pre-processing and post-processing measurement data points to calculate a set of etch depth numbers. The method further includes generating etch profiles for the set of orientations. The method yet also includes extrapolating a set of radiuses, which is associated with a first etch depth, from the etch profiles. The method yet further includes generating an off-centered plot, which is a graphical representation of the set of radiuses versus the set of orientations. The method more over includes calculating the process center by applying a curve-fitting equation to the off-centered plot.

摘要翻译： 提供了一种用于计算处理室中的卡盘的处理中心的方法。 该方法包括产生预处理和后处理测量数据点，其通过以一组取向和距衬底几何中心的一组距离测量薄膜衬底的厚度来执行。 该方法还包括比较预处理和后处理测量数据点以计算一组蚀刻深度数。 该方法还包括为该组取向生成蚀刻轮廓。 该方法还包括从蚀刻轮廓推断与第一蚀刻深度相关联的一组半径。 该方法还包括生成偏心图，其是该组半径与该组取向的图形表示。 更多的方法包括通过对偏心图应用曲线拟合方程来计算过程中心。

公开(公告)号：US20080081383A1

公开(公告)日：2008-04-03

申请号：US11612355

申请日：2006-12-18

申请人： Jack Chen ,  Andrew D. Bailey ,  Ben Mooring ,  Stephen J. Cain

发明人： Jack Chen ,  Andrew D. Bailey ,  Ben Mooring ,  Stephen J. Cain

IPC分类号： H01L21/66 ,  G06F19/00

CPC分类号： G05B19/41875 ,  G05B2219/37398 ,  G05B2219/45031 ,  G05B2219/50057 ,  Y02P90/22

摘要： A method for calculating a process center for a chuck in a processing chamber is provided. The method includes generating pre-processing and post-processing measurement data points, which is perform by measuring thickness of a film substrate at a set of orientations and a set of distances from a geometric center of the substrate. The method also includes comparing the pre-processing and post-processing measurement data points to calculate a set of etch depth numbers. The method further includes generating etch profiles for the set of orientations. The method yet also includes extrapolating a set of radiuses, which is associated with a first etch depth, from the etch profiles. The method yet further includes generating an off-centered plot, which is a graphical representation of the set of radiuses versus the set of orientations. The method more over includes calculating the process center by applying a curve-fitting equation to the off-centered plot.

摘要翻译： 提供了一种用于计算处理室中的卡盘的处理中心的方法。 该方法包括产生预处理和后处理测量数据点，其通过以一组取向和距衬底的几何中心的一组距离测量薄膜衬底的厚度来执行。 该方法还包括比较预处理和后处理测量数据点以计算一组蚀刻深度数。 该方法还包括为该组取向生成蚀刻轮廓。 该方法还包括从蚀刻轮廓推断与第一蚀刻深度相关联的一组半径。 该方法还包括生成偏心图，其是该组半径与该组取向的图形表示。 更多的方法包括通过对偏心图应用曲线拟合方程来计算过程中心。

公开(公告)号：US20090088887A1

公开(公告)日：2009-04-02

申请号：US12237155

申请日：2008-09-24

申请人： Jack Chen ,  Andrew C. Bailey, III ,  Ben Mooring ,  Stephen J. Cain

发明人： Jack Chen ,  Andrew C. Bailey, III ,  Ben Mooring ,  Stephen J. Cain

IPC分类号： G06F19/00

CPC分类号： H01L21/681 ,  H01L21/68

摘要： A method for aligning a substrate to a process center of a support mechanism is provided. The method includes determining substrate thickness after substrate processing at a plurality of orientations and at a plurality of radial distances from a geometric center of the substrate. The method also includes deriving a set of process rate values from substrate thickness and process duration. The method further includes creating for a process rate an off-centered plot which represents a substantially concentric circle whose points are a circumference of the off-centered plot having substantially the first process rate. The method yet also includes applying a curve-fitting equation to the off-centered plot to determine a set of parameters. The method yet further includes teaching a set of robot arms the set of parameters, thereby enabling the set of robot arms to align another substrate that is supported by the support mechanism with the process center.

摘要翻译： 提供了一种将基板对准支撑机构的处理中心的方法。 该方法包括在基板处理之后确定基板厚度，该基板在多个取向并且距离基板的几何中心的多个径向距离处。 该方法还包括从衬底厚度和工艺持续时间导出一组工艺速率值。 该方法还包括为处理速率创建一个偏心图，该偏心图表示基本上同心的圆，其点是具有基本上第一处理速率的偏心图的周长。 该方法还包括将曲线拟合方程应用于偏心图以确定一组参数。 该方法还包括向一组机器人手臂提供一组参数，从而使得该组机器人臂将由支撑机构支撑的另一个基板与处理中心对准。

公开(公告)号：US06428394B1

公开(公告)日：2002-08-06

申请号：US09541144

申请日：2000-03-31

申请人： Ben Mooring ,  Wilbur Krusell ,  Glenn Travis ,  Erik Engdahl

发明人： Ben Mooring ,  Wilbur Krusell ,  Glenn Travis ,  Erik Engdahl

IPC分类号： B24B100

CPC分类号： B24B37/24 ,  B24B21/04 ,  B24B37/245

摘要： A method and apparatus are disclosed for chemically-mechanically polishing and planarizing semiconductors. An apparatus includes first and second rollers connected by a tension belt. A polishing member is releasably attached to the first and second rollers. A method includes clamping a first portion of a continuous strip of polishing member to a first roller, clamping a second portion of the continuous strip to a second roller, applying a tension to the continuous strip and rotationally reciprocating the rollers while pressing a semiconductor wafer against the continuous strip.

摘要翻译： 公开了用于化学机械抛光和平面化半导体的方法和装置。 一种装置包括通过张紧带连接的第一和第二辊。 抛光构件可释放地附接到第一和第二辊。 一种方法包括：将第一部分的抛光构件的连续条夹持到第一辊上，将连续条带的第二部分夹紧到第二辊上，向连续条施加张力，并在将半导体晶片压在一起的同时旋转地往复运动 连续条。

公开(公告)号：US20130059260A1

公开(公告)日：2013-03-07

申请号：US13665702

申请日：2012-10-31

申请人： Ben Mooring ,  John Parks ,  Diane J. Hymes

发明人： Ben Mooring ,  John Parks ,  Diane J. Hymes

IPC分类号： F27D3/00

CPC分类号： H01L21/67109

摘要： Methods, systems, and computer programs are presented for processing a substrate in a processing chamber which includes a first chamber and a second chamber. A first surface of the substrate is exposed to the first chamber and a second surface of the substrate is exposed to the second chamber. One method includes an operation for applying a first fluid to the first surface of the substrate, where the first fluid is at a first temperature. Further, the method includes another operation for applying a second fluid to the second surface of the substrate, where the second fluid is at a second temperature. During processing of the substrate, the second temperature is higher than the first temperature, and the second fluid heats the substrate.

摘要翻译： 呈现用于处理包括第一室和第二室的处理室中的衬底的方法，系统和计算机程序。 衬底的第一表面暴露于第一腔室，衬底的第二表面暴露于第二腔室。 一种方法包括将第一流体施加到基底的第一表面的操作，其中第一流体处于第一温度。 此外，该方法包括将第二流体施加到基板的第二表面的另一操作，其中第二流体处于第二温度。 在处理基板期间，第二温度高于第一温度，第二流体加热基板。

公开(公告)号：US08591665B2

公开(公告)日：2013-11-26

申请号：US13665702

申请日：2012-10-31

申请人： Ben Mooring ,  John Parks ,  Diane J. Hymes

发明人： Ben Mooring ,  John Parks ,  Diane J. Hymes

IPC分类号： B08B7/00 ,  B08B7/04

CPC分类号： H01L21/67109

摘要： Methods, systems, and computer programs are presented for processing a substrate in a processing chamber which includes a first chamber and a second chamber. A first surface of the substrate is exposed to the first chamber and a second surface of the substrate is exposed to the second chamber. One method includes an operation for applying a first fluid to the first surface of the substrate, where the first fluid is at a first temperature. Further, the method includes another operation for applying a second fluid to the second surface of the substrate, where the second fluid is at a second temperature. During processing of the substrate, the second temperature is higher than the first temperature, and the second fluid heats the substrate.

摘要翻译： 呈现用于处理包括第一室和第二室的处理室中的衬底的方法，系统和计算机程序。 衬底的第一表面暴露于第一腔室，衬底的第二表面暴露于第二腔室。 一种方法包括将第一流体施加到基底的第一表面的操作，其中第一流体处于第一温度。 此外，该方法包括将第二流体施加到基板的第二表面的另一操作，其中第二流体处于第二温度。 在处理基板期间，第二温度高于第一温度，第二流体加热基板。

公开(公告)号：US08328942B2

公开(公告)日：2012-12-11

申请号：US11015968

申请日：2004-12-17

申请人： Ben Mooring ,  John Parks ,  Diane J. Hymes

发明人： Ben Mooring ,  John Parks ,  Diane J. Hymes

IPC分类号： C23C16/00

CPC分类号： H01L21/67109

摘要： In one of the many embodiments, an apparatus for processing a substrate is provided which includes a substrate processing chamber where the substrate is positioned within the substrate processing chamber so the substrate at least partially separates the substrate processing chamber into a first chamber and a second chamber. The apparatus further includes a first chamber inlet configured to input a first fluid of a first temperature into the first chamber at a first pressure and a second chamber inlet configured to input a second fluid of a second temperature into the second chamber at a second pressure wherein the first pressure and the second pressure are substantially equal. The second temperature is capable of being utilized to manage substrate temperature.

摘要翻译： 在许多实施例中的一个实施例中，提供了一种用于处理衬底的装置，其包括衬底处理室，其中衬底位于衬底处理室内，使得衬底至少部分地将衬底处理室分离成第一腔室和第二腔室 。 该装置还包括第一室入口，其构造成在第一压力下将第一温度的第一流体输入到第一室中，并且第二室入口构造成在第二压力下将第二温度的第二流体输入到第二室中， 第一压力和第二压力基本相等。 第二个温度可以用来管理衬底温度。