利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

57 条记录 (耗时 0.029 秒)

    Transferred thin film transistor and method for manufacturing the same
    1.
    发明授权
    Transferred thin film transistor and method for manufacturing the same 有权
    转移薄膜晶体管及其制造方法

    公开(公告)号：US08404532B2

    公开(公告)日：2013-03-26

    申请号：US12782303

    申请日：2010-05-18

    申请人： Jae Bon Koo ,  Jong-Hyun Ahn ,  Seung Youl Kang ,  Hasan Musarrat ,  In-Kyu You ,  Kyoung Ik Cho

    发明人： Jae Bon Koo ,  Jong-Hyun Ahn ,  Seung Youl Kang ,  Hasan Musarrat ,  In-Kyu You ,  Kyoung Ik Cho

    IPC分类号： H01L21/336

    CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

    摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.

    摘要翻译： 提供了一种转移的薄膜晶体管及其制造方法。 该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

    TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
    转印薄膜晶体管及其制造方法

    公开(公告)号：US20110133257A1

    公开(公告)日：2011-06-09

    申请号：US12782303

    申请日：2010-05-18

    申请人： Jae Bon KOO ,  Jong-Hyun Ahn ,  Seung Youl Kang ,  Hasan Musarrat ,  In-Kyu You ,  Kyoung Ik Cho

    发明人： Jae Bon KOO ,  Jong-Hyun Ahn ,  Seung Youl Kang ,  Hasan Musarrat ,  In-Kyu You ,  Kyoung Ik Cho

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

    摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.

    摘要翻译： 提供了一种转移的薄膜晶体管及其制造方法。 该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

    ORGANIC THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME
    4.
    发明申请
    ORGANIC THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME 有权
    有机薄膜晶体管及其形成方法

    公开(公告)号：US20110204334A1

    公开(公告)日：2011-08-25

    申请号：US12858868

    申请日：2010-08-18

    申请人： Kang Dae KIM ,  In-Kyu You ,  Jae Bon Koo ,  Yong Suk Yang ,  Seung Youl Kang

    发明人： Kang Dae KIM ,  In-Kyu You ,  Jae Bon Koo ,  Yong Suk Yang ,  Seung Youl Kang

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： H01L51/0545 ,  H01L51/105

    摘要： Provided are an organic thin film transistor and a method of forming the same. The method comprises forming a gate electrode on a substrate, forming a gate dielectric, which covers the gate electrode and includes a recess region at an upper portion, on the substrate, forming a source electrode and a drain electrode in the recess region, and forming an organic semiconductor layer between the source electrode and the drain electrode in the recess region.

    摘要翻译： 提供一种有机薄膜晶体管及其形成方法。 该方法包括在衬底上形成栅电极，形成覆盖栅电极并在衬底上包括上部的凹陷区的栅极电介质，在凹陷区域中形成源电极和漏电极，并形成 在凹陷区域中的源电极和漏电极之间的有机半导体层。

    Organic thin film transistor and method of forming the same
    6.
    发明授权
    Organic thin film transistor and method of forming the same 有权
    有机薄膜晶体管及其形成方法

    公开(公告)号：US08344366B2

    公开(公告)日：2013-01-01

    申请号：US12858868

    申请日：2010-08-18

    申请人： Kang Dae Kim ,  In-Kyu You ,  Jae Bon Koo ,  Yong Suk Yang ,  Seung Youl Kang

    发明人： Kang Dae Kim ,  In-Kyu You ,  Jae Bon Koo ,  Yong Suk Yang ,  Seung Youl Kang

    IPC分类号： H01L51/10

    CPC分类号： H01L51/0545 ,  H01L51/105

    摘要： Provided are an organic thin film transistor and a method of forming the same. The method comprises forming a gate electrode on a substrate, forming a gate dielectric, which covers the gate electrode and includes a recess region at an upper portion, on the substrate, forming a source electrode and a drain electrode in the recess region, and forming an organic semiconductor layer between the source electrode and the drain electrode in the recess region.

    摘要翻译： 提供一种有机薄膜晶体管及其形成方法。 该方法包括在衬底上形成栅电极，形成覆盖栅电极并在衬底上包括上部的凹陷区的栅极电介质，在凹陷区域中形成源电极和漏电极，并形成 在凹陷区域中的源电极和漏电极之间的有机半导体层。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    8.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的制造方法

    公开(公告)号：US20110092032A1

    公开(公告)日：2011-04-21

    申请号：US12766958

    申请日：2010-04-26

    申请人： Jae Bon Koo ,  Seung Youl Kang

    发明人： Jae Bon Koo ,  Seung Youl Kang

    IPC分类号： H01L21/336

    CPC分类号： H01L29/78603 ,  H01L21/84

    摘要： Provided is a manufacturing methods of a semiconductor device. The methods includes: forming an active layer on a first substrate; bonding a top surface of the active layer with a second substrate and separating the active layer from the first substrate; forming conductive impurity regions corresponding to source and drain regions of the active layer bonded on the second substrate; bonding a third substrate on a bottom surface of the active layer and removing the second substrate; and forming a gate electrode on a top between the conductive impurity regions of the active layer bonded on the third substrate and forming source and drain electrodes on the conductive impurity regions.

    摘要翻译： 提供半导体器件的制造方法。 所述方法包括：在第一基板上形成有源层; 将有源层的顶表面与第二衬底结合并将有源层与第一衬底分离; 形成对应于结合在所述第二基板上的所述有源层的源区和漏区的导电杂质区; 将第三衬底接合在有源层的底表面上并移除第二衬底; 以及在结合在第三基板上的有源层的导电杂质区之间的顶部上形成栅电极，并在导电杂质区上形成源电极和漏电极。

    TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    透明非易失性存储器薄膜晶体管及其制造方法

    公开(公告)号：US20100243994A1

    公开(公告)日：2010-09-30

    申请号：US12555986

    申请日：2009-09-09

    申请人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Woon Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

    发明人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Woon Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

    IPC分类号： H01L27/115 ,  H01L51/10 ,  H01L29/12 ,  H01L21/8246

    CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

    摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

    摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

    Solid type heat dissipation device
    10.
    发明授权
    Solid type heat dissipation device 有权
    固体散热装置

    公开(公告)号：US08584743B2

    公开(公告)日：2013-11-19

    申请号：US12765120

    申请日：2010-04-22

    申请人： Seok-Hwan Moon ,  Seung Youl Kang ,  Kyoung Ik Cho ,  Moo Jung Chu

    发明人： Seok-Hwan Moon ,  Seung Youl Kang ,  Kyoung Ik Cho ,  Moo Jung Chu

    IPC分类号： F28F7/00

    CPC分类号： F28D15/00 ,  H01L23/36 ,  H01L23/373 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a solid type heat dissipation device for electronic communication appliances. The solid type heat dissipation device includes a graphite thin plate horizontally transferring heat, a plurality of metal fillers passing through the graphite thin plate to vertically transfer heat, and a plurality of metal thin plates attached to upper and lower surfaces of the graphite thin plate and connected to the metal fillers.

    摘要翻译： 提供一种用于电子通信设备的固体型散热装置。 固体式散热装置包括水平传递热量的石墨薄板，通过石墨薄板的多个金属填料垂直传递热量，以及附着在石墨薄板的上表面和下表面上的多个金属薄板， 连接到金属填料。