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    Transferred thin film transistor and method for manufacturing the same
    1.
    发明授权
    Transferred thin film transistor and method for manufacturing the same 有权
    转移薄膜晶体管及其制造方法

    公开(公告)号：US08404532B2

    公开(公告)日：2013-03-26

    申请号：US12782303

    申请日：2010-05-18

    申请人： Jae Bon Koo ,  Jong-Hyun Ahn ,  Seung Youl Kang ,  Hasan Musarrat ,  In-Kyu You ,  Kyoung Ik Cho

    发明人： Jae Bon Koo ,  Jong-Hyun Ahn ,  Seung Youl Kang ,  Hasan Musarrat ,  In-Kyu You ,  Kyoung Ik Cho

    IPC分类号： H01L21/336

    CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

    摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.

    摘要翻译： 提供了一种转移的薄膜晶体管及其制造方法。 该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

    TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
    转印薄膜晶体管及其制造方法

    公开(公告)号：US20110133257A1

    公开(公告)日：2011-06-09

    申请号：US12782303

    申请日：2010-05-18

    申请人： Jae Bon KOO ,  Jong-Hyun Ahn ,  Seung Youl Kang ,  Hasan Musarrat ,  In-Kyu You ,  Kyoung Ik Cho

    发明人： Jae Bon KOO ,  Jong-Hyun Ahn ,  Seung Youl Kang ,  Hasan Musarrat ,  In-Kyu You ,  Kyoung Ik Cho

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

    摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.

    摘要翻译： 提供了一种转移的薄膜晶体管及其制造方法。 该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    4.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的制造方法

    公开(公告)号：US20110092032A1

    公开(公告)日：2011-04-21

    申请号：US12766958

    申请日：2010-04-26

    申请人： Jae Bon Koo ,  Seung Youl Kang

    发明人： Jae Bon Koo ,  Seung Youl Kang

    IPC分类号： H01L21/336

    CPC分类号： H01L29/78603 ,  H01L21/84

    摘要： Provided is a manufacturing methods of a semiconductor device. The methods includes: forming an active layer on a first substrate; bonding a top surface of the active layer with a second substrate and separating the active layer from the first substrate; forming conductive impurity regions corresponding to source and drain regions of the active layer bonded on the second substrate; bonding a third substrate on a bottom surface of the active layer and removing the second substrate; and forming a gate electrode on a top between the conductive impurity regions of the active layer bonded on the third substrate and forming source and drain electrodes on the conductive impurity regions.

    摘要翻译： 提供半导体器件的制造方法。 所述方法包括：在第一基板上形成有源层; 将有源层的顶表面与第二衬底结合并将有源层与第一衬底分离; 形成对应于结合在所述第二基板上的所述有源层的源区和漏区的导电杂质区; 将第三衬底接合在有源层的底表面上并移除第二衬底; 以及在结合在第三基板上的有源层的导电杂质区之间的顶部上形成栅电极，并在导电杂质区上形成源电极和漏电极。

    ORGANIC THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME
    5.
    发明申请
    ORGANIC THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME 有权
    有机薄膜晶体管及其形成方法

    公开(公告)号：US20110204334A1

    公开(公告)日：2011-08-25

    申请号：US12858868

    申请日：2010-08-18

    申请人： Kang Dae KIM ,  In-Kyu You ,  Jae Bon Koo ,  Yong Suk Yang ,  Seung Youl Kang

    发明人： Kang Dae KIM ,  In-Kyu You ,  Jae Bon Koo ,  Yong Suk Yang ,  Seung Youl Kang

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： H01L51/0545 ,  H01L51/105

    摘要： Provided are an organic thin film transistor and a method of forming the same. The method comprises forming a gate electrode on a substrate, forming a gate dielectric, which covers the gate electrode and includes a recess region at an upper portion, on the substrate, forming a source electrode and a drain electrode in the recess region, and forming an organic semiconductor layer between the source electrode and the drain electrode in the recess region.

    摘要翻译： 提供一种有机薄膜晶体管及其形成方法。 该方法包括在衬底上形成栅电极，形成覆盖栅电极并在衬底上包括上部的凹陷区的栅极电介质，在凹陷区域中形成源电极和漏电极，并形成 在凹陷区域中的源电极和漏电极之间的有机半导体层。

    Organic thin film transistor and method of forming the same
    6.
    发明授权
    Organic thin film transistor and method of forming the same 有权
    有机薄膜晶体管及其形成方法

    公开(公告)号：US08344366B2

    公开(公告)日：2013-01-01

    申请号：US12858868

    申请日：2010-08-18

    申请人： Kang Dae Kim ,  In-Kyu You ,  Jae Bon Koo ,  Yong Suk Yang ,  Seung Youl Kang

    发明人： Kang Dae Kim ,  In-Kyu You ,  Jae Bon Koo ,  Yong Suk Yang ,  Seung Youl Kang

    IPC分类号： H01L51/10

    CPC分类号： H01L51/0545 ,  H01L51/105

    摘要： Provided are an organic thin film transistor and a method of forming the same. The method comprises forming a gate electrode on a substrate, forming a gate dielectric, which covers the gate electrode and includes a recess region at an upper portion, on the substrate, forming a source electrode and a drain electrode in the recess region, and forming an organic semiconductor layer between the source electrode and the drain electrode in the recess region.

    摘要翻译： 提供一种有机薄膜晶体管及其形成方法。 该方法包括在衬底上形成栅电极，形成覆盖栅电极并在衬底上包括上部的凹陷区的栅极电介质，在凹陷区域中形成源电极和漏电极，并形成 在凹陷区域中的源电极和漏电极之间的有机半导体层。

    METHODS OF OPERATING A DISPLAY DEVICE
    9.
    发明申请
    METHODS OF OPERATING A DISPLAY DEVICE 有权
    操作显示装置的方法

    公开(公告)号：US20120154899A1

    公开(公告)日：2012-06-21

    申请号：US13326310

    申请日：2011-12-14

    申请人： Seongdeok Ahn ,  Seung Youl Kang

    发明人： Seongdeok Ahn ,  Seung Youl Kang

    IPC分类号： G02F1/167

    CPC分类号： G09G3/344 ,  G09G2300/0452 ,  G09G2320/0242

    摘要： Provided are methods of operating display devices. The method includes applying a first electric field to a capsule including first particles having a first color and second particles having a second color to move the first and second particles into a first region of the capsule; and applying a second electric field to the capsule to move the second particles into a second region of the capsule different from the first region and to leave the first particles in the first region of the capsule.

    摘要翻译： 提供操作显示设备的方法。 所述方法包括将第一电场施加到胶囊，所述胶囊包括具有第一颜色的第一颗粒和具有第二颜色的第二颗粒，以将所述第一和第二颗粒移动到所述胶囊的第一区域中; 以及将第二电场施加到所述胶囊以将所述第二颗粒移动到所述胶囊的与所述第一区域不同的第二区域中，并将所述第一颗粒留在所述胶囊的所述第一区域中。