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公开(公告)号：US20070018187A1
公开(公告)日：2007-01-25
申请号：US11490254
申请日：2006-07-21
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.
摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED包括n电极，第一n型GaN层，第一AlGaN层，GaN层，第二AlGaN层，第二n型GaN层，有源层，p型 GaN层和结构支撑层。 第一n型GaN层具有具有多个突起的不均匀图案。 第一AlGaN层形成在第一n型GaN层下方，并且GaN层形成在第一AlGaN层的下方。 有源层形成在第二n型GaN层下面，p型GaN层形成在有源层下面。 在p型GaN层的下方形成有p电极，在p电极的下方形成有结构支撑层。
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公开(公告)号：US20070018177A1
公开(公告)日：2007-01-25
申请号：US11490231
申请日：2006-07-21
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/16 , H01L33/32
摘要： Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.
摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED包括n电极。 在n电极下形成AlGaN层。 在AlGaN层下形成未掺杂的GaN层，以向AlGaN层的结界面提供二维电子气层。 GaN基LED结构包括依次形成在未掺杂的GaN层下面的n型GaN层，有源层和p型GaN层。 在GaN基LED结构下方形成p电极。 导电性基板形成在p电极的下方。
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公开(公告)号：US20060261367A1
公开(公告)日：2006-11-23
申请号：US11435751
申请日：2006-05-18
IPC分类号： H01L33/00
摘要： The invention provides a nitride semiconductor device and a manufacturing method thereof. In the invention, n-type and p-type nitride semiconductor layers are formed on a substrate, and an active layer is formed therebetween. The n-type nitride semiconductor layers include first and second n-type GaN layers disposed in the order of distance from the active layer. In addition, in the nitride semiconductor device of the invention, an AlxGa1-xN layer, where 0
摘要翻译： 本发明提供一种氮化物半导体器件及其制造方法。 在本发明中，在衬底上形成n型和p型氮化物半导体层，并且在它们之间形成有源层。 n型氮化物半导体层包括以距离有源层的距离的顺序设置的第一和第二n型GaN层。 此外，在本发明的氮化物半导体器件中，其中0
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4.发明申请Vertically-structured gan-based light emitting diode and method of manufacturing the same 有权垂直结构的基于发光二极管的发光二极管及其制造方法公开(公告)号：US20060273341A1
公开(公告)日：2006-12-07
申请号：US11430990
申请日：2006-05-10
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L2933/0083
摘要： The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.
摘要翻译： 本发明涉及一种垂直构造的GaN基发光二极管的制造方法。 制造垂直结构的GaN基发光二极管的方法包括在衬底上形成GaN层; 将化合物层图案化成预定的形状; 通过外延横向过度生长工艺在图案化的化合物层上形成n型GaN层，并在n型GaN层上依次形成有源层和p型GaN层; 在p型GaN层上形成结构支撑层; 在形成结构支撑层之后，依次去除衬底和形成在衬底上的GaN层; 去除在去除GaN层之后暴露的图案化合物层，以形成图案化为凹形的n型GaN层; 在形成凹形的n型GaN层上形成n型电极。
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公开(公告)号：US20080241982A1
公开(公告)日：2008-10-02
申请号：US11878503
申请日：2007-07-25
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/16 , H01L33/32
摘要： Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.
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公开(公告)号：US20070042520A1
公开(公告)日：2007-02-22
申请号：US11503944
申请日：2006-08-15
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/007
摘要： The present invention relates to a method of manufacturing a vertical GaN-based LED. The method includes forming an insulating pattern on a substrate to define LED regions having a predetermined size; sequentially stacking an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer on the substrate except for the insulating pattern to form a light emitting structure; removing the insulating pattern to divide the light emitting structure into LED sections having a predetermined size; forming p-electrodes on the LED sections, respectively; forming a structure support layer on the p-electrodes; removing the substrate to expose the divided n-type GaN-based semiconductor layer; and forming n-electrodes on the exposed n-type GaN-based semiconductor layer.
摘要翻译： 本发明涉及一种制造垂直GaN基LED的方法。 该方法包括在基板上形成绝缘图案以限定具有预定尺寸的LED区域; 在除了绝缘图案之外的衬底上依次堆叠n型GaN基半导体层，有源层和p型GaN基半导体层以形成发光结构; 去除绝缘图案以将发光结构分成具有预定尺寸的LED部分; 分别在LED部分上形成p电极; 在p电极上形成结构支撑层; 去除衬底以暴露分开的n型GaN基半导体层; 在暴露的n型GaN基半导体层上形成n电极。
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7.发明申请Nitride semiconductor light emitting device and method of manufacturing the same 有权氮化物半导体发光器件及其制造方法公开(公告)号：US20060054917A1
公开(公告)日：2006-03-16
申请号：US10998922
申请日：2004-11-30
IPC分类号： H01L33/00
摘要： A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.
摘要翻译： 公开了一种氮化物半导体发光器件及其制造方法。 氮化物半导体发光器件包括形成在衬底上的n型氮化物半导体层，形成在n型氮化物半导体层上的有源层，形成在有源层上的p型氮化物半导体层，形成的未掺杂的GaN层 在p型氮化物半导体层上，形成在未掺杂的GaN层上的AlGaN层，以在AlGaN层和未掺杂的GaN层之间的键合界面处形成二维电子气（2DEG）层，以及n侧电极 以及分别形成在相互连接的n型氮化物半导体层和AlGaN层上的p侧电极。 由于在p型氮化物半导体层上形成GaN / AlGaN的异质结结构，因此通过2DEG层的隧道效应，p型氮化物半导体层与p侧电极之间的接触电阻增强。
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公开(公告)号：US20060070395A1
公开(公告)日：2006-04-06
申请号：US11143458
申请日：2005-06-03
CPC分类号： F25D17/045 , F25D17/062 , F25D2317/0665 , F25D2317/067 , F25D2500/02
摘要： A refrigerator capable of adjusting a discharge position and a quantity of cold air discharged into the refrigerator. The refrigerator includes an inner panel installed at a rear surface of a storage chamber and having cold air outlets for forming a cooling channel. The refrigerator also includes a variable duct installed at one of the cold air outlets such that the variable duct can move back and forth to vary a length of the cooling channel, and a plurality of cold air distribution holes formed in the variable duct.
摘要翻译： 一种能够调节排出位置的冰箱以及排入冰箱的冷气的量。 冰箱包括安装在存储室的后表面的内板，并具有用于形成冷却通道的冷气出口。 冰箱还包括安装在一个冷气出口处的可变管道，使得可变管道可前后移动以改变冷却通道的长度，以及形成在可变管道中的多个冷气分配孔。
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公开(公告)号：US20120231778A1
公开(公告)日：2012-09-13
申请号：US13478545
申请日：2012-05-23
CPC分类号： H04W8/22 , G01S11/14 , H04M1/03 , H04M1/6008 , H04M1/605 , H04M2250/22
摘要： A mobile communications device contains at least two microphones. One microphone is located away from the handset receiver and serves to pick up voice of a near end user of the device for transmission to the other party during a call. Another microphone is located near the handset receiver and serves to pick up acoustic output of the handset receiver (a far end signal). A signal processor measures the frequency response of the receiver. The signal processor performs spectral analysis of the receiver frequency response to determine whether or not the device is being held at the ear of the user. On that basis, the device automatically changes its operating mode, e.g., turns on or off a touch sensitive display screen during the call. Other embodiments are also described.
摘要翻译： 移动通信设备包含至少两个麦克风。 一个麦克风位于远离手机接收器的位置，用于拾取设备的近端用户的语音，以便在通话过程中传送给对方。 另一个麦克风位于手机接收机附近，用于拾取手机接收机的声输出（远端信号）。 信号处理器测量接收机的频率响应。 信号处理器执行接收机频率响应的频谱分析，以确定设备是否被保持在用户的耳朵处。 在此基础上，设备自动改变其操作模式，例如，在通话期间打开或关闭触敏显示屏幕。 还描述了其它实施例。
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公开(公告)号：US08189429B2
公开(公告)日：2012-05-29
申请号：US12242608
申请日：2008-09-30
CPC分类号： H04W8/22 , G01S11/14 , H04M1/03 , H04M1/6008 , H04M1/605 , H04M2250/22
摘要： A mobile communications device contains at least two microphones. One microphone is located away from the handset receiver and serves to pick up voice of a near end user of the device for transmission to the other party during a call. Another microphone is located near the handset receiver and serves to pick up acoustic output of the handset receiver (a far end signal). A signal processor measures the frequency response of the receiver. The signal processor performs spectral analysis of the receiver frequency response to determine whether or not the device is being held at the ear of the user. On that basis, the device automatically changes its operating mode, e.g., turns on or off a touch sensitive display screen during the call. Other embodiments are also described.
摘要翻译： 移动通信设备包含至少两个麦克风。 一个麦克风位于远离手机接收器的位置，用于拾取设备的近端用户的语音，以便在通话过程中传送给对方。 另一个麦克风位于手机接收机附近，用于拾取手机接收机的声输出（远端信号）。 信号处理器测量接收机的频率响应。 信号处理器执行接收机频率响应的频谱分析，以确定设备是否被保持在用户的耳朵处。 在此基础上，设备自动改变其操作模式，例如，在通话期间打开或关闭触敏显示屏幕。 还描述了其它实施例。
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