摘要:
A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.
摘要:
Provided is an RF transceiver for a 77 GHz forward-looking radar sensor. The RF transceiver whose essential components use a Monolithic Microwave Integrated Circuit (MMIC) includes an IF terminal including a transmitter, a receiver, and an Automatic Gain Control (AGC) circuit, one transmitting antenna, and three receiving antennas.The heterodyne RF transceiver for a radar sensor includes; a transmitter for generating a transmission signal and emitting the generated signal to a transmitting antenna; a local oscillating portion for generating a local oscillation wave; a first mixer for up-mixing the transmission signal with the low frequency; a receiver for receiving a reception signal from a receiving antenna; a second mixer for down-mixing a mixing signal of the first mixer with the reception signal; and an RF portion for outputting a beat signal from a mixing signal of the second mixer and the local oscillation wave.In the RF transceiver, a heterodyne method using an intermediate frequency (IF) signal is applied, and one AGC circuit and three receiving antennas for enhancing receive sensitivity are used, so that the receive sensitivity is improved by 30 dB or more compared with a conventional RF transceiver using a homodyne method.
摘要:
An RF transceiver for radar sensors of microwave and millimeter wave bands, and an RF transceiver for a radar sensor which uses a monolithic microwave integrated circuit of core components and includes SP3T switches, Rotman lenses, and a transmitting five-patch array antenna and a receiving five-patch array antenna of a transmitting unit and a receiving unit. Smoother beam scanning with three beams is performed using the patch array antennas, the Rotman lenses, and the switches. The structure of the transceiver is configured in a homodyne scheme. A double balanced mixer is applied to improve separation characteristics between transmission and reception signals. Positive components such as the patch array antennas, the Rotman lenses, the switches, and an amplifier are configured on a single substrate.
摘要:
Provided is a power amplifier including: a depletion mode high electron mobility transistor (D-mode HEMT) configured to amplify a signal inputted to a gate terminal and output the amplified signal through a drain terminal; an input matching circuit configured to serially ground the gate terminal; and a DC bias circuit connected between the drain terminal and a ground. Through the foregoing configuration, the HEMT may be biased only by a single DC bias circuit without any biasing means to provide a negative voltage. Also, superior matching characteristic may be provided in various operation frequency bands through a shunt inductor and a choke inductor.