公开(公告)号：US20080080599A1

公开(公告)日：2008-04-03

申请号：US11737828

申请日：2007-04-20

申请人： Dong Min KANG ,  Ju Yeon HONG ,  Jae Yeob SHIM ,  Hyung Sup YOON ,  Kyung Ho LEE

发明人： Dong Min KANG ,  Ju Yeon HONG ,  Jae Yeob SHIM ,  Hyung Sup YOON ,  Kyung Ho LEE

IPC分类号： H04B1/38

CPC分类号： G01S13/34 ,  G01S7/03

摘要： Provided is an RF transceiver for a 77 GHz forward-looking radar sensor. The RF transceiver whose essential components use a Monolithic Microwave Integrated Circuit (MMIC) includes an IF terminal including a transmitter, a receiver, and an Automatic Gain Control (AGC) circuit, one transmitting antenna, and three receiving antennas.The heterodyne RF transceiver for a radar sensor includes; a transmitter for generating a transmission signal and emitting the generated signal to a transmitting antenna; a local oscillating portion for generating a local oscillation wave; a first mixer for up-mixing the transmission signal with the low frequency; a receiver for receiving a reception signal from a receiving antenna; a second mixer for down-mixing a mixing signal of the first mixer with the reception signal; and an RF portion for outputting a beat signal from a mixing signal of the second mixer and the local oscillation wave.In the RF transceiver, a heterodyne method using an intermediate frequency (IF) signal is applied, and one AGC circuit and three receiving antennas for enhancing receive sensitivity are used, so that the receive sensitivity is improved by 30 dB or more compared with a conventional RF transceiver using a homodyne method.

摘要翻译： 提供了一个用于77 GHz前视雷达传感器的RF收发器。 其基本组件使用单片微波集成电路（MMIC）的RF收发器包括包括发射机，接收机和自动增益控制（AGC）电路，一个发射天线和三个接收天线的IF终端。 用于雷达传感器的外差RF收发器包括： 发送器，用于产生发送信号并将发生的信号发送到发送天线; 用于产生局部振荡波的局部振荡部分; 用于将传输信号与低频进行混频的第一混频器; 用于从接收天线接收接收信号的接收机; 第二混频器，用于将第一混频器的混频信号与接收信号进行下混频; 以及用于从第二混频器的混合信号和本地振荡波输出拍频信号的RF部分。 在RF收发器中，使用使用中频（IF）信号的外差方法，并且使用一个AGC电路和三个用于增强接收灵敏度的接收天线，使得与常规的接收灵敏度相比，接收灵敏度提高了30dB或更多 RF收发器采用零差法。

公开(公告)号：US20090075463A1

公开(公告)日：2009-03-19

申请号：US12270016

申请日：2008-11-13

申请人： Jae Yoeb SHIM ,  Hyung Sup YOON ,  Dong Min KANG ,  Ju Yeon HONG ,  Kyung Ho LEE

发明人： Jae Yoeb SHIM ,  Hyung Sup YOON ,  Dong Min KANG ,  Ju Yeon HONG ,  Kyung Ho LEE

IPC分类号： H01L21/44

CPC分类号： H01L21/0331 ,  H01L21/28587

摘要： A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.

摘要翻译： 提供一种制造T型栅极的方法。 该方法包括以下步骤：在衬底上形成光致抗蚀剂层; 图案化形成在基板上的光致抗蚀剂层并形成第一开口; 在所述光致抗蚀剂层和所述基板上形成第一绝缘层; 去除所述第一绝缘层并形成第二开口以暴露所述衬底; 在所述第一绝缘层上形成第二绝缘层; 去除所述第二绝缘层并形成第三开口以暴露所述衬底; 在其上形成有光致抗蚀剂层和第三开口的第二绝缘层上形成金属层; 并除去形成在光致抗蚀剂层上的金属层。 因此，可以通过沉积绝缘层和橡皮干蚀刻工艺来形成限定栅极长度的均匀且精细的开口，因此可以制造更精细的微型T型栅电极。

公开(公告)号：US20130146944A1

公开(公告)日：2013-06-13

申请号：US13592589

申请日：2012-08-23

申请人： Hyung Sup YOON ,  Byoung-Gue Min ,  Jong Min Lee ,  Seong-II Kim ,  Dong Min Kang ,  Ho Kyun Ahn ,  Jong-Won Lim ,  Jae Kyoung Mun ,  Eun Soo Nam

发明人： Hyung Sup YOON ,  Byoung-Gue Min ,  Jong Min Lee ,  Seong-II Kim ,  Dong Min Kang ,  Ho Kyun Ahn ,  Jong-Won Lim ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC分类号： H01L29/812 ,  H01L21/338

CPC分类号： H01L29/0649 ,  H01L21/28593 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

摘要： Disclosed are a semiconductor device including a stepped gate electrode and a method of fabricating the semiconductor device. The semiconductor device according to an exemplary embodiment of the present disclosure includes: a semiconductor substrate having a structure including a plurality of epitaxial layers and including an under-cut region formed in a part of a Schottky layer in an upper most part thereof; a cap layer, a first nitride layer and a second nitride layer sequentially formed on the semiconductor substrate to form a stepped gate insulating layer pattern; and a stepped gate electrode formed by depositing a heat-resistant metal through the gate insulating layer pattern, wherein the under-cut region includes an air-cavity formed between the gate electrode and the Schottky layer.

摘要翻译： 本发明公开了一种半导体器件，包括阶梯栅电极和制造该半导体器件的方法。 根据本公开的示例性实施例的半导体器件包括：半导体衬底，其具有包括多个外延层的结构，并且包括形成在其最上部的肖特基层的一部分中的下切割区域; 顺序地形成在半导体衬底上的盖层，第一氮化物层和第二氮化物层，以形成台阶栅极绝缘层图案; 以及通过栅极绝缘层图案沉积耐热金属而形成的阶梯形栅电极，其中下切区域包括形成在栅电极和肖特基层之间的空腔。

公开(公告)号：US20130134554A1

公开(公告)日：2013-05-30

申请号：US13618873

申请日：2012-09-14

申请人： Seong-il KIM ,  Sang-Heung LEE ,  Jong-Won LIM ,  Hyung Sup YOON ,  Jongmin LEE ,  Byoung-Gue MIN ,  Jae Kyoung MUN ,  Eun Soo NAM

发明人： Seong-il KIM ,  Sang-Heung LEE ,  Jong-Won LIM ,  Hyung Sup YOON ,  Jongmin LEE ,  Byoung-Gue MIN ,  Jae Kyoung MUN ,  Eun Soo NAM

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L28/91 ,  H01L23/481 ,  H01L28/92 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are vertical capacitors and methods of forming the same. The formation of the vertical capacitor may include forming input and output electrodes on a top surface of a substrate, etching a bottom surface of the substrate to form via electrodes, and then, forming a dielectric layer between the via electrodes. As a result, a vertical capacitor with high capacitance can be provided in a small region of the substrate.

摘要翻译： 提供垂直电容器及其形成方法。 垂直电容器的形成可以包括在衬底的顶表面上形成输入和输出电极，蚀刻衬底的底表面以形成通孔电极，然后在通孔电极之间形成电介质层。 结果，可以在基板的小区域中提供具有高电容的垂直电容器。

公开(公告)号：US20120142148A1

公开(公告)日：2012-06-07

申请号：US13283626

申请日：2011-10-28

申请人： Hyung Sup YOON ,  Byoung-Gue Min ,  Hokyun Ahn ,  Sang-Heung Lee ,  Hae Cheon Kim

发明人： Hyung Sup YOON ,  Byoung-Gue Min ,  Hokyun Ahn ,  Sang-Heung Lee ,  Hae Cheon Kim

IPC分类号： H01L21/335

CPC分类号： H01L29/7783 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/42316 ,  H01L29/66462

摘要： Provided are a method of manufacturing a normally-off mode high frequency device structure and a method of simultaneously manufacturing a normally-on mode high frequency device structure and a normally-off mode high frequency device structure on a single substrate.

摘要翻译： 提供一种制造常闭型高频器件结构的方法以及在单个衬底上同时制造常开模式高频器件结构和常关型高频器件结构的方法。