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    Method of fabricating T-gate
    1.
    发明申请
    Method of fabricating T-gate 有权
    制造T型门的方法

    公开(公告)号：US20070128752A1

    公开(公告)日：2007-06-07

    申请号：US11607417

    申请日：2006-12-01

    申请人： Jae Yoeb Shim ,  Hyung Sup Yoon ,  Dong Min Kang ,  Ju Yeon Hong ,  Kyung Ho Lee

    发明人： Jae Yoeb Shim ,  Hyung Sup Yoon ,  Dong Min Kang ,  Ju Yeon Hong ,  Kyung Ho Lee

    IPC分类号： H01L21/00

    CPC分类号： H01L21/0331 ,  H01L21/28587

    摘要： A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.

    摘要翻译： 提供一种制造T型栅极的方法。 该方法包括以下步骤：在衬底上形成光致抗蚀剂层; 图案化形成在基板上的光致抗蚀剂层并形成第一开口; 在所述光致抗蚀剂层和所述基板上形成第一绝缘层; 去除所述第一绝缘层并形成第二开口以暴露所述衬底; 在所述第一绝缘层上形成第二绝缘层; 去除所述第二绝缘层并形成第三开口以暴露所述衬底; 在其上形成有光致抗蚀剂层和第三开口的第二绝缘层上形成金属层; 并除去形成在光致抗蚀剂层上的金属层。 因此，可以通过沉积绝缘层和橡皮干蚀刻工艺来形成限定栅极长度的均匀且精细的开口，因此可以制造更精细的微型T型栅电极。

    RESONATOR FOR COMMUNICATION SYSTEM AND FILTER USING THE SAME
    3.
    发明申请
    RESONATOR FOR COMMUNICATION SYSTEM AND FILTER USING THE SAME 审中-公开
    用于通信系统的谐振器和使用该通信系统的滤波器

    公开(公告)号：US20110241798A1

    公开(公告)日：2011-10-06

    申请号：US13070537

    申请日：2011-03-24

    申请人： Ju-Yeon HONG ,  Jeong-Ho Ju ,  Dong-Ho Kim ,  Young-Jun Chong ,  Wangjoo Lee ,  Jae-Ick Choi

    发明人： Ju-Yeon HONG ,  Jeong-Ho Ju ,  Dong-Ho Kim ,  Young-Jun Chong ,  Wangjoo Lee ,  Jae-Ick Choi

    IPC分类号： H03H7/01

    CPC分类号： H03H7/0115 ,  H03H7/175 ,  H03H7/1775 ,  H03H7/1791

    摘要： Provided are a resonator and a filter performing a filtering operation by using the resonator. The filter includes a first resonation unit connected in series to an input terminal and having a first resonant frequency, a filtering unit connected in series to the first resonation unit to filter a signal inputted through the input terminal, a second resonation unit connected in series between the filtering unit and an output terminal and having a second resonant frequency, a first zero-order resonation unit connected in parallel to a connection terminal between the input terminal and the first resonation unit and having a first zero-order resonant frequency equal to the first resonant frequency, and a second zero-order resonation unit connected in parallel to a connection terminal between the output terminal and the second resonation unit and having a second zero-order resonant frequency equal to the second resonant frequency.

    摘要翻译： 提供了通过使用谐振器来执行滤波操作的谐振器和滤波器。 滤波器包括串联连接到输入端并具有第一谐振频率的第一谐振单元，与第一谐振单元串联连接以对通过输入端输入的信号进行滤波的滤波单元，串联连接的第二谐振单元 所述滤波单元和输出端子具有第二谐振频率，第一零级谐振单元并联连接到所述输入端子和所述第一谐振单元之间的连接端子并且具有等于所述第一谐振频率的第一零级谐振频率 谐振频率和与输出端子和第二谐振单元之间的连接端并联连接并具有等于第二谐振频率的第二零级谐振频率的第二零级谐振单元。

    Method of fabricating T-gate
    4.
    发明授权
    Method of fabricating T-gate 失效
    制造T型门的方法

    公开(公告)号：US07915106B2

    公开(公告)日：2011-03-29

    申请号：US12270016

    申请日：2008-11-13

    申请人： Jae Yeob Shim ,  Hyung Sup Yoon ,  Dong Min Kang ,  Ju Yeon Hong ,  Kyung Ho Lee

    发明人： Jae Yeob Shim ,  Hyung Sup Yoon ,  Dong Min Kang ,  Ju Yeon Hong ,  Kyung Ho Lee

    IPC分类号： H01L21/338 ,  H01L21/44 ,  H01L21/28

    CPC分类号： H01L21/0331 ,  H01L21/28587

    摘要： A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.

    摘要翻译： 提供一种制造T型栅极的方法。 该方法包括以下步骤：在衬底上形成光致抗蚀剂层; 图案化形成在基板上的光致抗蚀剂层并形成第一开口; 在所述光致抗蚀剂层和所述基板上形成第一绝缘层; 去除所述第一绝缘层并形成第二开口以暴露所述衬底; 在所述第一绝缘层上形成第二绝缘层; 去除所述第二绝缘层并形成第三开口以暴露所述衬底; 在其上形成有光致抗蚀剂层和第三开口的第二绝缘层上形成金属层; 并除去形成在光致抗蚀剂层上的金属层。 因此，可以通过沉积绝缘层和橡皮干蚀刻工艺来形成限定栅极长度的均匀且精细的开口，因此可以制造更精细的微型T型栅电极。

    METHOD OF FABRICATING T-GATE
    5.
    发明申请
    METHOD OF FABRICATING T-GATE 失效
    制造T型门的方法

    公开(公告)号：US20090075463A1

    公开(公告)日：2009-03-19

    申请号：US12270016

    申请日：2008-11-13

    申请人： Jae Yoeb SHIM ,  Hyung Sup YOON ,  Dong Min KANG ,  Ju Yeon HONG ,  Kyung Ho LEE

    发明人： Jae Yoeb SHIM ,  Hyung Sup YOON ,  Dong Min KANG ,  Ju Yeon HONG ,  Kyung Ho LEE

    IPC分类号： H01L21/44

    CPC分类号： H01L21/0331 ,  H01L21/28587

    摘要： A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.

    摘要翻译： 提供一种制造T型栅极的方法。 该方法包括以下步骤：在衬底上形成光致抗蚀剂层; 图案化形成在基板上的光致抗蚀剂层并形成第一开口; 在所述光致抗蚀剂层和所述基板上形成第一绝缘层; 去除所述第一绝缘层并形成第二开口以暴露所述衬底; 在所述第一绝缘层上形成第二绝缘层; 去除所述第二绝缘层并形成第三开口以暴露所述衬底; 在其上形成有光致抗蚀剂层和第三开口的第二绝缘层上形成金属层; 并除去形成在光致抗蚀剂层上的金属层。 因此，可以通过沉积绝缘层和橡皮干蚀刻工艺来形成限定栅极长度的均匀且精细的开口，因此可以制造更精细的微型T型栅电极。

    Method of fabricating T-gate
    6.
    发明授权
    Method of fabricating T-gate 有权
    制造T型门的方法

    公开(公告)号：US07468295B2

    公开(公告)日：2008-12-23

    申请号：US11607417

    申请日：2006-12-01

    申请人： Jae Yoeb Shim ,  Hyung Sup Yoon ,  Dong Min Kang ,  Ju Yeon Hong ,  Kyung Ho Lee

    发明人： Jae Yoeb Shim ,  Hyung Sup Yoon ,  Dong Min Kang ,  Ju Yeon Hong ,  Kyung Ho Lee

    IPC分类号： H01L21/338

    CPC分类号： H01L21/0331 ,  H01L21/28587

    摘要： A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.

    摘要翻译： 提供一种制造T型栅极的方法。 该方法包括以下步骤：在衬底上形成光致抗蚀剂层; 图案化形成在基板上的光致抗蚀剂层并形成第一开口; 在所述光致抗蚀剂层和所述基板上形成第一绝缘层; 去除所述第一绝缘层并形成第二开口以暴露所述衬底; 在所述第一绝缘层上形成第二绝缘层; 去除所述第二绝缘层并形成第三开口以暴露所述衬底; 在其上形成有光致抗蚀剂层和第三开口的第二绝缘层上形成金属层; 并除去形成在光致抗蚀剂层上的金属层。 因此，可以通过沉积绝缘层和橡皮干蚀刻工艺来形成限定栅极长度的均匀且精细的开口，因此可以制造更精细的微型T型栅电极。

    HETERODYNE RF TRANSCEIVER FOR RADAR SENSOR
    7.
    发明申请
    HETERODYNE RF TRANSCEIVER FOR RADAR SENSOR 审中-公开
    用于雷达传感器的异步射频收发器

    公开(公告)号：US20080080599A1

    公开(公告)日：2008-04-03

    申请号：US11737828

    申请日：2007-04-20

    申请人： Dong Min KANG ,  Ju Yeon HONG ,  Jae Yeob SHIM ,  Hyung Sup YOON ,  Kyung Ho LEE

    发明人： Dong Min KANG ,  Ju Yeon HONG ,  Jae Yeob SHIM ,  Hyung Sup YOON ,  Kyung Ho LEE

    IPC分类号： H04B1/38

    CPC分类号： G01S13/34 ,  G01S7/03

    摘要： Provided is an RF transceiver for a 77 GHz forward-looking radar sensor. The RF transceiver whose essential components use a Monolithic Microwave Integrated Circuit (MMIC) includes an IF terminal including a transmitter, a receiver, and an Automatic Gain Control (AGC) circuit, one transmitting antenna, and three receiving antennas.The heterodyne RF transceiver for a radar sensor includes; a transmitter for generating a transmission signal and emitting the generated signal to a transmitting antenna; a local oscillating portion for generating a local oscillation wave; a first mixer for up-mixing the transmission signal with the low frequency; a receiver for receiving a reception signal from a receiving antenna; a second mixer for down-mixing a mixing signal of the first mixer with the reception signal; and an RF portion for outputting a beat signal from a mixing signal of the second mixer and the local oscillation wave.In the RF transceiver, a heterodyne method using an intermediate frequency (IF) signal is applied, and one AGC circuit and three receiving antennas for enhancing receive sensitivity are used, so that the receive sensitivity is improved by 30 dB or more compared with a conventional RF transceiver using a homodyne method.

    摘要翻译： 提供了一个用于77 GHz前视雷达传感器的RF收发器。 其基本组件使用单片微波集成电路（MMIC）的RF收发器包括包括发射机，接收机和自动增益控制（AGC）电路，一个发射天线和三个接收天线的IF终端。 用于雷达传感器的外差RF收发器包括： 发送器，用于产生发送信号并将发生的信号发送到发送天线; 用于产生局部振荡波的局部振荡部分; 用于将传输信号与低频进行混频的第一混频器; 用于从接收天线接收接收信号的接收机; 第二混频器，用于将第一混频器的混频信号与接收信号进行下混频; 以及用于从第二混频器的混合信号和本地振荡波输出拍频信号的RF部分。 在RF收发器中，使用使用中频（IF）信号的外差方法，并且使用一个AGC电路和三个用于增强接收灵敏度的接收天线，使得与常规的接收灵敏度相比，接收灵敏度提高了30dB或更多 RF收发器采用零差法。