Methods for fabricating ferroelectric memory devices using pulsed-power plasma
    4.
    发明授权
    Methods for fabricating ferroelectric memory devices using pulsed-power plasma 失效
    使用脉冲功率等离子体制造铁电存储器件的方法

    公开(公告)号:US06391659B1

    公开(公告)日:2002-05-21

    申请号:US09569069

    申请日:2000-05-10

    IPC分类号: H01L2100

    摘要: There is provided a method for fabricating a ferroelectric memory device, which can prevent the deterioration of the ferroelectric characteristics from etching damage generated during etching process of the interlayer-insulating layer formed over the capacitor to form a contact hole. The present invention is characterized by etching the interlayer-insulating layer with the use of time-modulated plasma, namely pulsed-power plasma. Accordingly, the present invention can prevent the deterioration of the ferroelectric characteristics from etching, omit or reduce the later separate thermal process for recovering the etching damage and enhance the reliability of device.

    摘要翻译: 提供了一种用于制造铁电存储器件的方法,其可以防止铁电特性的劣化,从而在形成在电容器上的层间绝缘层的蚀刻工艺期间产生的蚀刻损伤形成接触孔。 本发明的特征在于使用时间调制等离子体即脉冲功率等离子体蚀刻层间绝缘层。 因此,本发明可以防止铁电特性的腐蚀劣化,省略或减少用于恢复蚀刻损伤的后续分离的热处理并提高器件的可靠性。