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1.发明申请HIGH SENSITIVITY PHOTODETECTORS, IMAGING ARRAYS, AND HIGH EFFICIENCY PHOTOVOLTAIC DEVICES PRODUCED USING ION IMPLANTATION AND FEMTOSECOND LASER IRRADIATION 有权高灵敏度光电转换器，成像阵列以及使用离子植入和有机钛激光辐照生产的高效光伏器件公开(公告)号：US20100052088A1
公开(公告)日：2010-03-04
申请号：US12553861
申请日：2009-09-03
申请人： James E. Carey , Xia Li , Nathaniel J. McCaffrey
发明人： James E. Carey , Xia Li , Nathaniel J. McCaffrey
IPC分类号： H01L31/08 , H01L21/265
CPC分类号： H01L31/1864 , H01L21/26506 , H01L21/26513 , H01L21/268 , H01L31/0288 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention relates generally to methods for high throughput and controllable creation of high performance semiconductor substrates for use in devices such as high sensitivity photodetectors, imaging arrays, high efficiency solar cells and the like, to semiconductor substrates prepared according to the methods, and to an apparatus for performing the methods of the invention.
摘要翻译： 本发明一般涉及用于高性能半导体衬底的高通量和可控制造方法，所述高性能半导体衬底用于诸如高灵敏度光电检测器，成像阵列，高效率太阳能电池等的器件中，用于根据该方法制备的半导体衬底，以及 一种用于执行本发明的方法的装置。
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2.发明授权High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation 有权高灵敏度光电检测器，成像阵列和使用离子注入和飞秒激光照射制造的高效光伏器件公开(公告)号：US08679959B2
公开(公告)日：2014-03-25
申请号：US12553861
申请日：2009-09-03
申请人： James E. Carey , Xia Li , Nathaniel J. McCaffrey
发明人： James E. Carey , Xia Li , Nathaniel J. McCaffrey
IPC分类号： H01L21/425 , H01L21/265
CPC分类号： H01L31/1864 , H01L21/26506 , H01L21/26513 , H01L21/268 , H01L31/0288 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention relates generally to methods for high throughput and controllable creation of high performance semiconductor substrates for use in devices such as high sensitivity photodetectors, imaging arrays, high efficiency solar cells and the like, to semiconductor substrates prepared according to the methods, and to an apparatus for performing the methods of the invention.
摘要翻译： 本发明一般涉及用于高性能半导体衬底的高通量和可控制造方法，所述高性能半导体衬底用于诸如高灵敏度光电检测器，成像阵列，高效率太阳能电池等的器件中，用于根据该方法制备的半导体衬底，以及 一种用于执行本发明的方法的装置。
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公开(公告)号：US20120049068A1
公开(公告)日：2012-03-01
申请号：US13288415
申请日：2011-11-03
CPC分类号： G01J5/08 , G01J3/36 , G01J5/024 , G01J5/0846 , G01J5/20 , G01J2005/0077
摘要： An apparatus for detecting radiation of a plurality of wavelengths of the electromagnetic spectrum may be provided. The apparatus includes a substrate, a laser irradiated layer proximal to a first side of the substrate, and a microbolometer and at least one readout circuit proximal to a second side of the substrate in electrical communication with the laser irradiated layer. The substrate, laser irradiated layer, and the microbolometer are disposed and arranged such that radiation of a first wavelength is substantially detected by the laser irradiated layer, and radiation of a second wavelength is substantially detected by the microbolometer.
摘要翻译： 可以提供用于检测电磁光谱的多个波长的辐射的装置。 该装置包括基板，靠近基板的第一侧的激光照射层，以及与激光照射层电连通的基板附近的至少一个读出电路。 衬底，激光照射层和微热辐射计被布置和布置成使得第一波长的辐射基本上被激光照射层检测到，并且第二波长的辐射基本上被微测热计检测。
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公开(公告)号：US08143688B2
公开(公告)日：2012-03-27
申请号：US12782449
申请日：2010-05-18
IPC分类号： H01L31/102
CPC分类号： H01L31/102 , H01L31/101 , H01L31/108 , H01L31/18
摘要： A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations.
摘要翻译： 公开了使用激光处理半导体作为检测材料的具有增加的光敏性的装置。 在一些实施例中，激光处理的半导体可以放置在n型和p型接触或两种肖特基金属之间。 p-n结或肖特基金属结中的场可能有助于消耗激光处理的半导体部分，并且可能能够分离电子空穴对。 提出了多种设备配置，包括横向和垂直配置。
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公开(公告)号：US07745901B1
公开(公告)日：2010-06-29
申请号：US12362078
申请日：2009-01-29
IPC分类号： H01L31/07
CPC分类号： H01L31/102 , H01L31/101 , H01L31/108 , H01L31/18
摘要： A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations.
摘要翻译： 公开了使用激光处理半导体作为检测材料的具有增加的光敏性的装置。 在一些实施例中，激光处理的半导体可以放置在n型和p型接触或两种肖特基金属之间。 p-n结或肖特基金属结中的场可能有助于消耗激光处理的半导体部分，并且可能能够分离电子空穴对。 提出了多种设备配置，包括横向和垂直配置。
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公开(公告)号：US08058615B2
公开(公告)日：2011-11-15
申请号：US12363039
申请日：2009-01-30
IPC分类号： H01L27/14
CPC分类号： G01J5/08 , G01J3/36 , G01J5/024 , G01J5/0846 , G01J5/20 , G01J2005/0077
摘要： An apparatus for detecting radiation of a plurality of wavelengths of the electromagnetic spectrum may be provided. The apparatus includes a substrate, a laser irradiated layer proximal to a first side of the substrate, and a microbolometer and at least one readout circuit proximal to a second side of the substrate in electrical communication with the laser irradiated layer. The substrate, laser irradiated layer, and the microbolometer are disposed and arranged such that radiation of a first wavelength is substantially detected by the laser irradiated layer, and radiation of a second wavelength is substantially detected by the microbolometer.
摘要翻译： 可以提供用于检测电磁光谱的多个波长的辐射的装置。 该装置包括基板，靠近基板的第一侧的激光照射层，以及与激光照射层电连通的基板附近的至少一个读出电路。 衬底，激光照射层和微热辐射计被布置和布置成使得第一波长的辐射基本上被激光照射层检测到，并且第二波长的辐射基本上被微测热计检测。
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公开(公告)号：US20090218606A1
公开(公告)日：2009-09-03
申请号：US12396170
申请日：2009-03-02
IPC分类号： H01L31/112 , H01L31/103 , H01L27/146
CPC分类号： H01L27/14603 , H01L27/14634
摘要： Embodiments hereof include a photosensing device, comprising an isolation layer; a photodetector layer comprising a plurality of pixels, wherein the photodetector layer is in contact with a first side of the isolation layer, wherein the photodetector layer comprises a laser-processed semiconductor material; and a semiconductor layer disposed on a second side of the isolation layer.
摘要翻译： 其实施方式包括光敏装置，其包括隔离层; 包括多个像素的光电检测器层，其中所述光电检测器层与所述隔离层的第一侧接触，其中所述光电检测器层包括经激光处理的半导体材料; 以及设置在所述隔离层的第二侧上的半导体层。
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公开(公告)号：US20130075852A1
公开(公告)日：2013-03-28
申请号：US13430508
申请日：2012-03-26
IPC分类号： H01L31/102
CPC分类号： H01L31/102 , H01L31/101 , H01L31/108 , H01L31/18
摘要： A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations.
摘要翻译： 公开了使用激光处理半导体作为检测材料的具有增加的光敏性的装置。 在一些实施例中，激光处理的半导体可以放置在n型和p型接触或两种肖特基金属之间。 p-n结或肖特基金属结中的场可能有助于消耗激光处理的半导体部分，并且可能能够分离电子空穴对。 提出了多种设备配置，包括横向和垂直配置。
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公开(公告)号：US07847253B2
公开(公告)日：2010-12-07
申请号：US12252101
申请日：2008-10-15
IPC分类号： G01J5/00
CPC分类号： H01L27/14669 , G01J3/36 , G01J5/02 , G01J5/023 , G01J5/08 , G01J5/0846 , G01J5/20 , G01J5/40 , H01L27/14652
摘要： A detector incorporating a laser-doped element that is favorably absorbing to at least a portion of the electromagnetic spectrum, for example in the infra-red range, is used in a light detector article. Readout circuits permitting a detector to operate in a substantial range of the electromagnetic spectrum, including the visual and infra-red range, enable day and night imaging in some embodiments. Configurations for making the detectors are also provided.
摘要翻译： 在光检测器制品中使用包含有利地吸收到电磁光谱的至少一部分的激光掺杂元件的检测器，例如在红外范围内。 允许检测器在包括视觉和红外范围在内的电磁光谱的实质范围内操作的读出电路在一些实施例中使得能够进行日夜成像。 还提供了用于制作探测器的配置。
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公开(公告)号：US20090218493A1
公开(公告)日：2009-09-03
申请号：US12363039
申请日：2009-01-30
CPC分类号： G01J5/08 , G01J3/36 , G01J5/024 , G01J5/0846 , G01J5/20 , G01J2005/0077
摘要： An apparatus for detecting radiation of a plurality of wavelengths of the electromagnetic spectrum may be provided. The apparatus includes a substrate, a laser irradiated layer proximal to a first side of the substrate, and a microbolometer and at least one readout circuit proximal to a second side of the substrate in electrical communication with the laser irradiated layer. The substrate, laser irradiated layer, and the microbolometer are disposed and arranged such that radiation of a first wavelength is substantially detected by the laser irradiated layer, and radiation of a second wavelength is substantially detected by the microbolometer.
摘要翻译： 可以提供用于检测电磁光谱的多个波长的辐射的装置。 该装置包括基板，靠近基板的第一侧的激光照射层，以及与激光照射层电连通的基板附近的至少一个读出电路。 衬底，激光照射层和微热辐射计被布置和布置成使得第一波长的辐射基本上被激光照射层检测到，并且第二波长的辐射基本上被微测热计检测。
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