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    Planar mid-IR integrated microphotonics
    2.
    发明申请
    Planar mid-IR integrated microphotonics 失效
    平面中红外集成微电子学

    公开(公告)号：US20070110358A1

    公开(公告)日：2007-05-17

    申请号：US11543333

    申请日：2006-10-05

    申请人： Juejun Hu ,  Anuradha Agarwal ,  Lionel Kimerling

    发明人： Juejun Hu ,  Anuradha Agarwal ,  Lionel Kimerling

    IPC分类号： G02B6/12 ,  G02B6/26

    CPC分类号： G02B6/102 ,  G02B6/12004 ,  G02B6/13 ,  H01L31/02327

    摘要： A planar mid-infrared (mid-IR) integrated microphotonic platform includes at least one laser performing lasing functions. The at least one laser comprises chalcogenide glass. At least amplifier structure is coupled to the at least one laser for performing optical amplification. The at least amplifier structure comprises chalcogenide glass. At least one waveguide structure is coupled to the at least one amplifier structure for guiding an optical signal in the microphotonic platform. The at least waveguide structure comprises chalcogenide glass. At least one modulator structure is coupled to the at least one waveguide structure for modulating the optical signal. The at least modulator structure comprises chalcogenide glass. At least one photodetector is coupled to the at least one modulator structure for performing photodetecting functions of the microphotonic platform. The at least photodetector comprises chalcogenide glass. At least one optical sensor is coupled to the at least one photodetector for performing optical sensing functions of the microphotonic platform. The at least optical sensor comprises chalcogenide glass.

    摘要翻译： 平面中红外（中红外）集成微球平台包括至少一个激光器执行激光功能。 至少一个激光器包括硫族化物玻璃。 至少放大器结构耦合到至少一个用于执行光放大的激光器。 至少放大器结构包括硫族化物玻璃。 至少一个波导结构耦合到至少一个放大器结构，用于引导微电子平台中的光信号。 至少波导结构包括硫族化物玻璃。 至少一个调制器结构耦合到至少一个波导结构以调制光信号。 该至少调制器结构包括硫族化物玻璃。 至少一个光电检测器耦合到至少一个调制器结构，用于执行微电子平台的光电检测功能。 该至少光电探测器包括硫族化物玻璃。 至少一个光学传感器耦合到至少一个光电检测器，用于执行微电子平台的光学感测功能。 该至少光学传感器包括硫族化物玻璃。

    Infrared detection material and method of production
    5.
    发明申请
    Infrared detection material and method of production 审中-公开
    红外线检测材料及生产方法

    公开(公告)号：US20060102870A1

    公开(公告)日：2006-05-18

    申请号：US11252140

    申请日：2005-10-17

    申请人： Jean Viens ,  Juejun Hu ,  Fernand Viens ,  Anuradha Agarwal ,  Lionel Kimerling

    发明人： Jean Viens ,  Juejun Hu ,  Fernand Viens ,  Anuradha Agarwal ,  Lionel Kimerling

    IPC分类号： C04B35/00

    CPC分类号： H01L31/0264 ,  H01L27/14625 ,  H01L27/14652 ,  H01L29/78681 ,  H01L31/0272

    摘要： A thin film quaternary compound semiconductor comprising arsenic (As), selenium (Se), tellurium (Te) and copper (Cu) atoms with adjustable molar concentrations during processing, whose atomic arrangement is predominantly amorphous, glassy or polycrystalline, and dominated by covalent chemical bonds between the said atoms. The amorphous nature of the atomic arrangement gives predominance to short range atomic order, eliminating the constraints of lattice constant mismatch and polarity mismatch with the substrate, which opens the way to wide chemical compositional adjustments and to lower-cost deposition processes such as thermal evaporation or sputtering.

    摘要翻译： 包含砷（As），硒（Se），碲（Te）和铜（Cu）原子的薄膜季铵化合物半导体，其加工过程中的摩尔浓度可调，其原子排列主要为无定形，玻璃状或多晶，并以共价化学 所述原子之间的键。 原子排列的无定形性给出了短程原子序列的优势，消除了晶格常数不匹配和与衬底的极性失配的约束，这开辟了广泛的化学成分调整和较低成本的沉积工艺，如热蒸发或 溅射。

    Photoconductors for mid-/far-IR detection
    6.
    发明授权
    Photoconductors for mid-/far-IR detection 有权
    用于中/远红外检测的光电导体

    公开(公告)号：US08115203B2

    公开(公告)日：2012-02-14

    申请号：US12359513

    申请日：2009-01-26

    申请人： Juejun Hu ,  Anuradha Agarwal ,  Lionel C. Kimerling

    发明人： Juejun Hu ,  Anuradha Agarwal ,  Lionel C. Kimerling

    IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00

    CPC分类号： H01L31/109 ,  H01L31/032

    摘要： An infrared photodiode structure is provided. The infrared photodiode structure includes a doped semiconductor layer having ions of certain conductivity. An active photodetecting region is positioned on the doped semiconductor layer for detecting an infrared light signal. The active photodetecting region includes one or more amorphous semiconductor materials so as to allow for high signal-to-noise ratio being achieved by invoking carrier hopping and band conduction, under dark and illuminated conditions.

    摘要翻译： 提供红外光电二极管结构。 红外光电二极管结构包括具有一定导电性离子的掺杂半导体层。 有源光电检测区位于掺杂半导体层上，用于检测红外光信号。 有源光电检测区域包括一个或多个非晶半导体材料，以便在黑暗和照明条件下通过调用载波跳变和带通导致高的信噪比。

    Multi-spectral pixel and focal plane array
    8.
    发明申请
    Multi-spectral pixel and focal plane array 有权

    公开(公告)号：US20060091284A1

    公开(公告)日：2006-05-04

    申请号：US11251955

    申请日：2005-10-17

    申请人： Jean Viens ,  Anuradha Agarwal ,  Lionel Kimerling

    发明人： Jean Viens ,  Anuradha Agarwal ,  Lionel Kimerling

    IPC分类号： G01J1/20 ,  G01J5/00

    CPC分类号： H01L31/0264 ,  H01L27/14625 ,  H01L27/14652 ,  H01L29/78681 ,  H01L31/0272

    摘要： A novel detection pixel micro-structure allowing the simultaneous and continuous detection of several discrete optical frequencies. A focal plane array comprises a plurality of multi-spectral detection pixels and a connecting platform to electrically connect the pixels. Each of the multi-spectral detection pixels form a resonant optical structure that comprises at least two periodic latticed dielectric reflectors, and at least one optical cavity between the said latticed dielectric reflectors. The latticed dielectric reflectors create a plurality of photonic bandgaps in the spectral response of the pixel. In addition, each optical cavity of the pixel comprises at least two optical resonant modes, corresponding to localized Bloch modes supported by the pixel dielectric structure, wherein each optical resonant mode is localized maximally at, and minimally away from, the optical cavity.