公开(公告)号：US07491965B2

公开(公告)日：2009-02-17

申请号：US12127994

申请日：2008-05-28

申请人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

发明人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

IPC分类号： H01L47/00

CPC分类号： H01L45/1233 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

摘要翻译： 用于集成电路器件的电可重新编程保险丝（eFUSE）器件包括细长的加热器元件，围绕细长加热器元件的外表面的电绝缘衬垫，其对应于其纵向轴线，留下细长加热器的相对端 元件与第一和第二加热器电极电接触。 相变材料（PCM）围绕电绝缘衬垫的外表面的一部分，热和电绝缘层围绕PCM的外表面，其中第一和第二熔丝电极与PCM的相对端电接触。 PCM被封装在电绝缘衬垫，热和电绝缘层以及第一和第二熔丝电极中。

公开(公告)号：US20080048169A1

公开(公告)日：2008-02-28

申请号：US11467294

申请日：2006-08-25

申请人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

发明人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

IPC分类号： H01L47/00 ,  H01L21/76

CPC分类号： H01L45/1233 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

摘要翻译： 用于集成电路器件的电可重新编程保险丝（eFUSE）器件包括细长的加热器元件，围绕细长加热器元件的外表面的电绝缘衬垫，其对应于其纵向轴线，留下细长加热器的相对端 元件与第一和第二加热器电极电接触。 相变材料（PCM）围绕电绝缘衬垫的外表面的一部分，热和电绝缘层围绕PCM的外表面，其中第一和第二熔丝电极与PCM的相对端电接触。 PCM被封装在电绝缘衬垫，热和电绝缘层以及第一和第二熔丝电极中。

公开(公告)号：US07394089B2

公开(公告)日：2008-07-01

申请号：US11467294

申请日：2006-08-25

申请人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

发明人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

IPC分类号： H01L47/00

CPC分类号： H01L45/1233 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

摘要翻译： 用于集成电路器件的电可重新编程保险丝（eFUSE）器件包括细长的加热器元件，围绕细长加热器元件的外表面的电绝缘衬垫，其对应于其纵向轴线，留下细长加热器的相对端 元件与第一和第二加热器电极电接触。 相变材料（PCM）围绕电绝缘衬垫的外表面的一部分，热和电绝缘层围绕PCM的外表面，其中第一和第二熔丝电极与PCM的相对端电接触。 PCM被封装在电绝缘衬垫，热和电绝缘层以及第一和第二熔丝电极中。

公开(公告)号：US20080224118A1

公开(公告)日：2008-09-18

申请号：US12127994

申请日：2008-05-28

申请人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

发明人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

IPC分类号： H01L47/00

CPC分类号： H01L45/1233 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

公开(公告)号：US07960808B2

公开(公告)日：2011-06-14

申请号：US11844109

申请日：2007-08-23

申请人： Geoffrey W. Burr ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Xiao Hu Liu ,  Stephen M. Rossnagel ,  Christy S. Tyberg ,  Robert L. Wisnieff

发明人： Geoffrey W. Burr ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Xiao Hu Liu ,  Stephen M. Rossnagel ,  Christy S. Tyberg ,  Robert L. Wisnieff

IPC分类号： H01L29/00

CPC分类号： H01L23/5256 ,  H01L23/5252 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.

摘要翻译： 集成电路中的可逆熔丝结构通过实现具有短路相变材料的熔断电池获得，所述相变材料与能够使电流通过相变材料线（熔丝电池）的通孔和线结构相接触。 电流通过熔丝电池，以便通过将结晶状态的相变材料加热至熔点，从而将材料从较小电阻的材料转变为更电阻的材料，然后快速将材料淬火成非晶状态。 可逆编程通过使较低电流通过熔丝电池来实现，以将高电阻率无定形材料转换成较低电阻率的晶体材料。 集成适当的感测电路以读取存储在熔丝中的信息，其中所述感测电路用于启用或禁用电路。

公开(公告)号：US20110207286A1

公开(公告)日：2011-08-25

申请号：US13100456

申请日：2011-05-04

申请人： Geoffrey W. Burr ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Xiao Hu Liu ,  Stephen M. Rossnagel ,  Christy S. Tyberg ,  Robert L. Wisnieff

发明人： Geoffrey W. Burr ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Xiao Hu Liu ,  Stephen M. Rossnagel ,  Christy S. Tyberg ,  Robert L. Wisnieff

IPC分类号： H01L21/768

CPC分类号： H01L23/5256 ,  H01L23/5252 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.

摘要翻译： 集成电路中的可逆熔丝结构通过实现具有短路相变材料的熔断电池获得，所述相变材料与能够使电流通过相变材料线（熔丝电池）的通孔和线结构相接触。 电流通过熔丝电池，以便通过将结晶状态的相变材料加热至熔点，从而将材料从较小电阻的材料转变为更电阻的材料，然后快速将材料淬火成非晶状态。 可逆编程通过使较低电流通过熔丝电池来实现，以将高电阻率无定形材料转换成较低电阻率的晶体材料。 集成适当的感测电路以读取存储在熔丝中的信息，其中所述感测电路用于启用或禁用电路。

公开(公告)号：US08278155B2

公开(公告)日：2012-10-02

申请号：US13100456

申请日：2011-05-04

申请人： Geoffrey W. Burr ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Xiao Hu Liu ,  Stephen M. Rossnagel ,  Christy S. Tyberg ,  Robert L. Wisnieff

发明人： Geoffrey W. Burr ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Xiao Hu Liu ,  Stephen M. Rossnagel ,  Christy S. Tyberg ,  Robert L. Wisnieff

IPC分类号： H01L21/82 ,  H01L21/326 ,  H01L21/479

CPC分类号： H01L23/5256 ,  H01L23/5252 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.

摘要翻译： 集成电路中的可逆熔丝结构通过实现具有短路相变材料的熔断电池获得，所述相变材料与能够使电流通过相变材料线（熔丝电池）的通孔和线结构相接触。 电流通过熔丝电池，以便通过将结晶状态的相变材料加热至熔点，从而将材料从较小电阻的材料转变为更电阻的材料，然后快速将材料淬火成非晶状态。 可逆编程通过使较低电流通过熔丝电池来实现，以将高电阻率无定形材料转换成较低电阻率的晶体材料。 集成适当的感测电路以读取存储在熔丝中的信息，其中所述感测电路用于启用或禁用电路。

公开(公告)号：US07388273B2

公开(公告)日：2008-06-17

申请号：US11152750

申请日：2005-06-14

申请人： Geoffrey W. Burr ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Xiao Hu Liu ,  Stephen M. Rossnagel ,  Christy S. Tyberg ,  Robert L. Wisnieff

发明人： Geoffrey W. Burr ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Xiao Hu Liu ,  Stephen M. Rossnagel ,  Christy S. Tyberg ,  Robert L. Wisnieff

IPC分类号： H01L29/00

CPC分类号： H01L23/5256 ,  H01L23/5252 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.

摘要翻译： 集成电路中的可逆熔丝结构通过实现具有短路相变材料的熔断电池获得，所述相变材料与能够使电流通过相变材料线（熔丝电池）的通孔和线结构相接触。 电流通过熔丝电池，以便通过将结晶状态的相变材料加热至熔点，从而将材料从较小电阻的材料转变为更电阻的材料，然后快速将材料淬火成非晶状态。 可逆编程通过使较低电流通过熔丝电池来实现，以将高电阻率无定形材料转换成较低电阻率的晶体材料。 集成适当的感测电路以读取存储在熔丝中的信息，其中所述感测电路用于启用或禁用电路。

公开(公告)号：US08017522B2

公开(公告)日：2011-09-13

申请号：US11626550

申请日：2007-01-24

申请人： Qinghuang Lin ,  Terry A. Spooner ,  Darshan D. Gandhi ,  Christy S. Tyberg

发明人： Qinghuang Lin ,  Terry A. Spooner ,  Darshan D. Gandhi ,  Christy S. Tyberg

IPC分类号： H01L21/44 ,  H01L21/311

CPC分类号： H01L21/3105 ,  H01L21/76805 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76834

摘要： A mechanically robust semiconductor structure with improved adhesion strength between a low-k dielectric layer and a dielectric-containing substrate is provided. In particular, the present invention provides a structure that includes a dielectric-containing substrate having an upper region including a treated surface layer which is chemically and physically different from the substrate; and a low-k dielectric material located on a the treated surface layer of the substrate. The treated surface layer and the low-k dielectric material form an interface that has an adhesion strength that is greater than 60% of the cohesive strength of the weaker material on either side of the interface. The treated surface is formed by treating the surface of the substrate with at least one of actinic radiation, a plasma and e-beam radiation prior to forming of the substrate the low-k dielectric material.

摘要翻译： 提供了具有改善的低k电介质层和含电介质衬底之间的粘附强度的机械稳固的半导体结构。 特别地，本发明提供了一种结构，其包括含电介质的衬底，其具有包括化学和物理上不同于衬底的经处理的表面层的上部区域; 以及位于所述基板的经处理的表面层上的低k电介质材料。 经处理的表面层和低k电介质材料形成界面，该界面的粘合强度大于界面两侧的较弱材料的内聚强度的60％。 经处理的表面通过在形成低k电介质材料之前用光化辐射，等离子体和电子束辐射中的至少一种来处理衬底的表面而形成。

公开(公告)号：US07598169B2

公开(公告)日：2009-10-06

申请号：US11677100

申请日：2007-02-21

申请人： Qinghuang Lin ,  Elbert E. Huang ,  Christy S. Tyberg ,  Ronald A. DellaGuardia

发明人： Qinghuang Lin ,  Elbert E. Huang ,  Christy S. Tyberg ,  Ronald A. DellaGuardia

IPC分类号： H01L21/4763

CPC分类号： H01L21/31127 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

摘要： A method to fabricate interconnect structures that are part of integrated circuits and microelectronic devices by utilization of an irradiation to remove and clean a sacrificial material used therein is described. The advantages of utilizing the irradiation to remove the sacrificial material include reduced damage to interlayer dielectric layers that result in enhanced device performance and/or increased reliability.

摘要翻译： 描述了通过利用照射去除和清洁其中使用的牺牲材料来制造作为集成电路和微电子器件的一部分的互连结构的方法。 利用照射去除牺牲材料的优点包括降低对层间电介质层的损伤，导致增强的器件性能和/或增加的可靠性。