公开(公告)号：US06660664B1

公开(公告)日：2003-12-09

申请号：US09541091

申请日：2000-03-31

申请人： James W. Adkisson ,  Arne W. Ballantine ,  Matthew D. Gallagher ,  Peter J. Geiss ,  Jeffrey D. Gilbert ,  Shwu-Jen Jeng ,  Donna K. Johnson ,  Robb A. Johnson ,  Glen L. Miles ,  Kirk D. Peterson ,  James J. Toomey ,  Tina Wagner

发明人： James W. Adkisson ,  Arne W. Ballantine ,  Matthew D. Gallagher ,  Peter J. Geiss ,  Jeffrey D. Gilbert ,  Shwu-Jen Jeng ,  Donna K. Johnson ,  Robb A. Johnson ,  Glen L. Miles ,  Kirk D. Peterson ,  James J. Toomey ,  Tina Wagner

IPC分类号： H01L2131

CPC分类号： H01L28/20 ,  H01L21/3185

摘要： A process of forming a nitride film on a semiconductor substrate including exposing a surface of the substrate to a rapid thermal process to form the nitride film.

摘要翻译： 一种在半导体衬底上形成氮化物膜的方法，包括将衬底的表面暴露于快速热处理以形成氮化物膜。

公开(公告)号：US06936509B2

公开(公告)日：2005-08-30

申请号：US10665713

申请日：2003-09-19

申请人： Douglas Duane Coolbaugh ,  Mark D. Dupuis ,  Matthew D. Gallagher ,  Peter J. Geiss ,  Brett A. Philips

发明人： Douglas Duane Coolbaugh ,  Mark D. Dupuis ,  Matthew D. Gallagher ,  Peter J. Geiss ,  Brett A. Philips

IPC分类号： H01L29/73 ,  H01L21/20 ,  H01L21/331 ,  H01L29/732 ,  H01L29/737 ,  H01L21/8249

CPC分类号： H01L29/66242 ,  H01L29/7378

摘要： A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each isolation region includes a recessed surface and a non-recessed surface which are formed utilizing lithography and etching. A SiGe layer is formed on the substrate as well as the recessed non-recessed surfaces of each isolation region, the SiGe layer includes polycrystalline Si regions and a SiGe base region. A patterned insulator layer is formed on the SiGe base region; and an emitter is formed on the patterned insulator layer and in contact with the SiGe base region through an emitter window opening.

摘要翻译： 提供一种SiGe双极晶体管，其包括其中形成有集电极和副集电极区的半导体衬底，其中集电极和副集电极形成在也存在于衬底中的隔离区之间。 每个隔离区域包括使用光刻和蚀刻形成的凹陷表面和非凹陷表面。 在衬底上形成SiGe层以及每个隔离区的凹入的非凹入表面，SiGe层包括多晶Si区和SiGe基区。 在SiGe基极区上形成图案化的绝缘体层; 并且在图案化的绝缘体层上形成发射极，并通过发射器窗口与SiGe基极区域接触。

公开(公告)号：US06674102B2

公开(公告)日：2004-01-06

申请号：US09769640

申请日：2001-01-25

申请人： Douglas Duane Coolbaugh ,  Mark D. Dupuis ,  Matthew D. Gallagher ,  Peter J. Geiss ,  Brett A. Philips

发明人： Douglas Duane Coolbaugh ,  Mark D. Dupuis ,  Matthew D. Gallagher ,  Peter J. Geiss ,  Brett A. Philips

IPC分类号： H01L29737

CPC分类号： H01L29/66242 ,  H01L29/7378

摘要： A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each isolation region includes a recessed surface and a non-recessed surface which are formed utilizing lithography and etching. A SiGe layer is formed on the substrate as well as the recessed non-recessed surfaces of each isolation region, the SiGe layer includes polycrystalline Si regions and a SiGe base region. A patterned insulator layer is formed on the SiGe base region; and an emitter is formed on the patterned insulator layer and in contact with the SiGe base region through an emitter window opening.