公开(公告)号：US20090236644A1

公开(公告)日：2009-09-24

申请号：US12050967

申请日：2008-03-19

申请人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Charles F. Musante ,  Richard J. Rassel

发明人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Charles F. Musante ,  Richard J. Rassel

IPC分类号： H01L31/113 ,  H04N5/335 ,  G06F17/50

CPC分类号： H04N5/361 ,  G06F17/5063 ,  H04N5/359 ,  H04N5/3745

摘要： A global shutter compatible pixel circuit comprising a reset gate (RG) transistor is provided in which a dynamic voltage is applied to the drain of the reset gate transistor in order to reduce a floating diffusion (FD) leakage therethrough during signal hold time. The drain voltage of the reset gate transistor is held at a lower voltage than a circuit supply voltage to minimize the off-state leakage through the RG transistor, thus reducing the change in the voltage at the floating diffusion during the signal hold time. In addition, a design structure for such a circuit providing a dynamic voltage to the drain of a reset gate of a pixel circuit is also provided.

摘要翻译： 提供了包括复位栅极（RG）晶体管的全局快门兼容像素电路，其中动态电压被施加到复位栅极晶体管的漏极，以便减少在信号保持时间期间通过其的浮动扩散（FD）泄漏。 复位栅极晶体管的漏极电压保持在比电路电源电压更低的电压，以最小化通过RG晶体管的截止状态泄漏，从而减少在信号保持时间期间浮动扩散时的电压变化。 此外，还提供了用于向像素电路的复位栅极的漏极提供动态电压的这种电路的设计结构。

公开(公告)号：US20100097511A1

公开(公告)日：2010-04-22

申请号：US12641589

申请日：2009-12-18

申请人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Charles F. Musante ,  Richard J. Rassel

发明人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Charles F. Musante ,  Richard J. Rassel

IPC分类号： H04N5/335 ,  G06F17/50

CPC分类号： H04N5/361 ,  G06F17/5063 ,  H04N5/359 ,  H04N5/3745

摘要： A global shutter compatible pixel circuit comprising a reset gate (RG) transistor is provided in which a dynamic voltage is applied to the drain of the reset gate transistor in order to reduce a floating diffusion (FD) leakage therethrough during signal hold time. The drain voltage of the reset gate transistor is held at a lower voltage than a circuit supply voltage to minimize the off-state leakage through the RG transistor, thus reducing the change in the voltage at the floating diffusion during the signal hold time. In addition, a design structure for such a circuit providing a dynamic voltage to the drain of a reset gate of a pixel circuit is also provided.

摘要翻译： 提供了包括复位栅极（RG）晶体管的全局快门兼容像素电路，其中动态电压被施加到复位栅极晶体管的漏极，以便减少在信号保持时间期间通过其的浮动扩散（FD）泄漏。 复位栅极晶体管的漏极电压保持在比电路电源电压更低的电压，以最小化通过RG晶体管的截止状态泄漏，从而减少信号保持时间期间浮动扩散时的电压变化。 此外，还提供了用于向像素电路的复位栅极的漏极提供动态电压的这种电路的设计结构。

公开(公告)号：US08023021B2

公开(公告)日：2011-09-20

申请号：US12641589

申请日：2009-12-18

申请人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Charles F. Musante ,  Richard J. Rassel

发明人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Charles F. Musante ,  Richard J. Rassel

IPC分类号： H04N5/335

CPC分类号： H04N5/361 ,  G06F17/5063 ,  H04N5/359 ,  H04N5/3745

摘要： A global shutter compatible pixel circuit comprising a reset gate (RG) transistor is provided in which a dynamic voltage is applied to the drain of the reset gate transistor in order to reduce a floating diffusion (FD) leakage therethrough during signal hold time. The drain voltage of the reset gate transistor is held at a lower voltage than a circuit supply voltage to minimize the off-state leakage through the RG transistor, thus reducing the change in the voltage at the floating diffusion during the signal hold time. In addition, a design structure for such a circuit providing a dynamic voltage to the drain of a reset gate of a pixel circuit is also provided.

摘要翻译： 提供了包括复位栅极（RG）晶体管的全局快门兼容像素电路，其中动态电压被施加到复位栅极晶体管的漏极，以便减少在信号保持时间期间通过其的浮动扩散（FD）泄漏。 复位栅极晶体管的漏极电压保持在比电路电源电压更低的电压，以最小化通过RG晶体管的截止状态泄漏，从而减少信号保持时间期间浮动扩散时的电压变化。 此外，还提供了用于向像素电路的复位栅极的漏极提供动态电压的这种电路的设计结构。

公开(公告)号：US07655966B2

公开(公告)日：2010-02-02

申请号：US12050967

申请日：2008-03-19

申请人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Charles F. Musante ,  Richard J. Rassel

发明人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Mark D. Jaffe ,  Charles F. Musante ,  Richard J. Rassel

IPC分类号： H04N3/14

CPC分类号： H04N5/361 ,  G06F17/5063 ,  H04N5/359 ,  H04N5/3745

摘要： A global shutter compatible pixel circuit comprising a reset gate (RG) transistor is provided in which a dynamic voltage is applied to the drain of the reset gate transistor in order to reduce a floating diffusion (FD) leakage therethrough during signal hold time. The drain voltage of the reset gate transistor is held at a lower voltage than a circuit supply voltage to minimize the off-state leakage through the RG transistor, thus reducing the change in the voltage at the floating diffusion during the signal hold time. In addition, a design structure for such a circuit providing a dynamic voltage to the drain of a reset gate of a pixel circuit is also provided.

摘要翻译： 提供了包括复位栅极（RG）晶体管的全局快门兼容像素电路，其中动态电压被施加到复位栅极晶体管的漏极，以便减少在信号保持时间期间通过其的浮动扩散（FD）泄漏。 复位栅极晶体管的漏极电压保持在比电路电源电压更低的电压，以最小化通过RG晶体管的截止状态泄漏，从而减少信号保持时间期间浮动扩散时的电压变化。 此外，还提供了用于向像素电路的复位栅极的漏极提供动态电压的这种电路的设计结构。

公开(公告)号：US08009215B2

公开(公告)日：2011-08-30

申请号：US12174264

申请日：2008-07-16

申请人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Rajendran Krishnasamy ,  Solomon Mulugeta ,  Charles F. Musante ,  Richard J. Rassel

发明人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Rajendran Krishnasamy ,  Solomon Mulugeta ,  Charles F. Musante ,  Richard J. Rassel

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/37452

摘要： A set of frame transfer transistors are provided between a hold gate transistor and a transfer gate transistor of a CMOS image sensor to enable storage of charge generate in the photosensitive diode after exposure. The readout of the charges from the set of frame transfer transistors may be performed after a plurality of exposures of the CMOS image sensor, between each of which charges are shifted toward the transfer gate transistor within the set of frame transfer transistors. Useful operation modes are enabled including a burst mode operation for rapid capture of successive images and high dynamic range operations in which multiple images are taken with different exposure times or a large capacitance is provided by ganging the diffusions of the set of frame transfer transistors.

摘要翻译： 在CMOS图像传感器的保持栅晶体管和传输栅极晶体管之间提供一组帧传输晶体管，以便能够在曝光之后存储在感光二极管中产生的电荷。 可以在CMOS图像传感器的多次曝光之后，在每个帧转移晶体管中的每个电荷向着传输门晶体管移动之前执行来自该组帧转移晶体管的电荷的读出。 启用有用的操作模式，包括用于快速捕获连续图像的突发模式操作和其中以不同曝光时间拍摄多个图像的高动态范围操作，或者通过组合帧传输晶体管的扩散来提供大的电容。

公开(公告)号：US08009216B2

公开(公告)日：2011-08-30

申请号：US12174289

申请日：2008-07-16

申请人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Rajendran Krishnasamy ,  Solomon Mulugeta ,  Charles F. Musante ,  Richard J. Rassel

发明人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Rajendran Krishnasamy ,  Solomon Mulugeta ,  Charles F. Musante ,  Richard J. Rassel

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/37452 ,  H04N5/2355

摘要： A set of frame transfer transistors are provided between a hold gate transistor and a transfer gate transistor of a CMOS image sensor to enable storage of charge generate in the photosensitive diode after exposure. The readout of the charges from the set of frame transfer transistors may be performed after a plurality of exposures of the CMOS image sensor, between each of which charges are shifted toward the transfer gate transistor within the set of frame transfer transistors. Useful operation modes are enabled including a burst mode operation for rapid capture of successive images and high dynamic range operations in which multiple images are taken with different exposure times or a large capacitance is provided by ganging the diffusions of the set of frame transfer transistors.

公开(公告)号：US08298853B2

公开(公告)日：2012-10-30

申请号：US12853795

申请日：2010-08-10

申请人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Rajendran Krishnasamy ,  Solomon Mulugeta ,  Charles F. Musante ,  Richard J. Rassel

发明人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Rajendran Krishnasamy ,  Solomon Mulugeta ,  Charles F. Musante ,  Richard J. Rassel

IPC分类号： H01L21/00

CPC分类号： H01L31/1136 ,  H01L27/14614 ,  H01L27/14643 ,  H01L27/14689

摘要： CMOS pixel sensor cells with spacer transfer gates and methods of manufacture are provided herein. The method includes forming a middle gate structure on a gate dielectric. The method further includes forming insulation sidewalls on the middle gate structure. The method further includes forming spacer transfer gates on the gate dielectric on opposing sides of the middle gate, adjacent to the insulation sidewalls which isolate the middle gate structure from the spacer transfer gates. The method further includes forming a photo-diode region in electrical contact with one of the spacer transfer gates and a floating diffusion in electrical contact with another of the spacer transfer gates.

摘要翻译： 本文提供具有间隔物传输门的CMOS像素传感器单元和制造方法。 该方法包括在栅极电介质上形成中间栅极结构。 该方法还包括在中间栅极结构上形成绝缘侧壁。 该方法还包括在中间栅极的相对侧上的栅极电介质上形成间隔物传输门，邻近绝缘侧壁，隔离侧壁将中间栅极结构与间隔物传输门隔离。 该方法还包括形成光电二极管区域与间隔物传递门中的一个电气接触，以及浮动扩散部分与另一个间隔物传送门电接触。

公开(公告)号：US20100013973A1

公开(公告)日：2010-01-21

申请号：US12174289

申请日：2008-07-16

申请人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Rajendran Krishnasamy ,  Solomon Mulugeta ,  Charles F. Musante ,  Richard J. Rassel

发明人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Rajendran Krishnasamy ,  Solomon Mulugeta ,  Charles F. Musante ,  Richard J. Rassel

IPC分类号： H04N5/335

CPC分类号： H04N5/37452 ,  H04N5/2355

摘要： A set of frame transfer transistors are provided between a hold gate transistor and a transfer gate transistor of a CMOS image sensor to enable storage of charge generate in the photosensitive diode after exposure. The readout of the charges from the set of frame transfer transistors may be performed after a plurality of exposures of the CMOS image sensor, between each of which charges are shifted toward the transfer gate transistor within the set of frame transfer transistors. Useful operation modes are enabled including a burst mode operation for rapid capture of successive images and high dynamic range operations in which multiple images are taken with different exposure times or a large capacitance is provided by ganging the diffusions of the set of frame transfer transistors.

摘要翻译： 在CMOS图像传感器的保持栅晶体管和传输栅极晶体管之间提供一组帧传输晶体管，以便能够在曝光之后存储在感光二极管中产生的电荷。 可以在CMOS图像传感器的多次曝光之后，在每个帧转移晶体管中的每个电荷向着传输门晶体管移动之前执行来自该组帧转移晶体管的电荷的读出。 启用有用的操作模式，包括用于快速捕获连续图像的突发模式操作和其中以不同曝光时间拍摄多个图像的高动态范围操作，或者通过组合帧传输晶体管的扩散来提供大的电容。

公开(公告)号：US20100013972A1

公开(公告)日：2010-01-21

申请号：US12174264

申请日：2008-07-16

申请人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Rajendran Krishnasamy ,  Solomon Mulugeta ,  Charles F. Musante ,  Richard J. Rassel

发明人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Rajendran Krishnasamy ,  Solomon Mulugeta ,  Charles F. Musante ,  Richard J. Rassel

IPC分类号： H04N5/335

CPC分类号： H04N5/37452

摘要： A set of frame transfer transistors are provided between a hold gate transistor and a transfer gate transistor of a CMOS image sensor to enable storage of charge generate in the photosensitive diode after exposure. The readout of the charges from the set of frame transfer transistors may be performed after a plurality of exposures of the CMOS image sensor, between each of which charges are shifted toward the transfer gate transistor within the set of frame transfer transistors. Useful operation modes are enabled including a burst mode operation for rapid capture of successive images and high dynamic range operations in which multiple images are taken with different exposure times or a large capacitance is provided by ganging the diffusions of the set of frame transfer transistors.

公开(公告)号：US20100136733A1

公开(公告)日：2010-06-03

申请号：US12699419

申请日：2010-02-03

申请人： James W. Adkisson ,  John J. Ellis-Monaghan ,  R. Michael Guidash ,  Mark D. Jaffe ,  Edward T. Nelson ,  Richard J. Rassel ,  Charles V. Stancampiano

发明人： James W. Adkisson ,  John J. Ellis-Monaghan ,  R. Michael Guidash ,  Mark D. Jaffe ,  Edward T. Nelson ,  Richard J. Rassel ,  Charles V. Stancampiano

IPC分类号： H01L31/18

CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

摘要： A CMOS active pixel sensor (APS) cell structure having dual workfunction transfer gate device and method of fabrication. The transfer gate device comprises a dielectric layer formed on a substrate and a dual workfunction gate conductor layer formed on the dielectric layer comprising a first conductivity type doped region and an abutting second conductivity type doped region. The transfer gate device defines a channel region where charge accumulated by a photosensing device is transferred to a diffusion region. A silicide structure is formed atop the dual workfunction gate conductor layer for electrically coupling the first and second conductivity type doped regions. In one embodiment, the silicide contact is smaller in area dimension than an area dimension of said dual workfunction gate conductor layer. Presence of the silicide strap prevents the diodic behavior from allowing one or the other side of the gate to float to an indeterminate voltage.

摘要翻译： 具有双功能转移栅极器件和制造方法的CMOS有源像素传感器（APS）单元结构。 传输栅极器件包括形成在衬底上的电介质层和形成在包括第一导电类型掺杂区和邻接第二导电类型掺杂区的电介质层上的双功函数栅导体层。 传输门装置限定了由光敏装置累积的电荷被传送到扩散区的沟道区。 在双功函数栅极导体层顶部形成硅化物结构，用于电耦合第一和第二导电类型掺杂区域。 在一个实施例中，硅化物接触面积尺寸小于所述双功函数栅极导体层的面积尺寸。 硅化物带的存在防止了双极性行为允许栅极的一侧或另一侧浮动到不确定的电压。