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    Methods of forming stressed silicon-carbon areas in an NMOS transistor
    5.
    发明授权
    Methods of forming stressed silicon-carbon areas in an NMOS transistor 有权
    在NMOS晶体管中形成应力硅 - 碳区域的方法

    公开(公告)号：US08536034B2

    公开(公告)日：2013-09-17

    申请号：US13216921

    申请日：2011-08-24

    申请人： Stefan Flachowsky ,  Ralf Illgen ,  Thilo Scheiper ,  Jan Hoentschel

    发明人： Stefan Flachowsky ,  Ralf Illgen ,  Thilo Scheiper ,  Jan Hoentschel

    IPC分类号： H01L21/425

    CPC分类号： H01L21/26513 ,  H01L21/26526 ,  H01L29/7848

    摘要： Disclosed herein are various methods of forming stressed silicon-carbon areas in an NMOS transistor device. In one example, a method disclosed herein includes forming a layer of amorphous carbon above a surface of a semiconducting substrate comprising a plurality of N-doped regions and performing an ion implantation process on the layer of amorphous carbon to dislodge carbon atoms from the layer of amorphous carbon and to drive the dislodged carbon atoms into the N-doped regions in the substrate.

    摘要翻译： 这里公开了在NMOS晶体管器件中形成应力硅 - 碳区域的各种方法。 在一个实例中，本文公开的方法包括在包括多个N掺杂区域的半导体衬底的表面上方形成无定形碳层，并对无定形碳层进行离子注入工艺以将碳原子从层 并且将移动的碳原子驱动到衬底中的N掺杂区域中。

    FINFET STRUCTURES AND METHODS FOR FABRICATING THE SAME
    6.
    发明申请
    FINFET STRUCTURES AND METHODS FOR FABRICATING THE SAME 有权
    FINFET结构及其制造方法

    公开(公告)号：US20140015055A1

    公开(公告)日：2014-01-16

    申请号：US13545597

    申请日：2012-07-10

    申请人： Stefan Flachowsky ,  Ralf Illgen ,  Jan Hoentschel

    发明人： Stefan Flachowsky ,  Ralf Illgen ,  Jan Hoentschel

    IPC分类号： H01L27/088 ,  H01L21/20

    CPC分类号： H01L29/66795 ,  H01L29/1054 ,  H01L29/66545 ,  H01L29/7851

    摘要： A method is disclosed for fabricating an integrated circuit in a replacement-gate process flow utilizing a dummy-gate structure overlying a plurality of fin structures. The method includes removing the dummy-gate structure to form a first void space, depositing a shaper material to fill the first void space, removing a portion of the plurality of fin structures to form a second void space, epitaxially growing a high carrier mobility material to fill the second void space, removing the shaper material to form a third void space, and depositing a replacement metal gate material to fill the third void space.

    摘要翻译： 公开了一种利用覆盖多个翅片结构的虚拟栅极结构在替代栅极工艺流程中制造集成电路的方法。 该方法包括去除伪栅极结构以形成第一空隙空间，沉积成形材料以填充第一空隙空间，去除多个翅片结构的一部分以形成第二空隙空间，外延生长高载流子迁移率材料 以填充第二空隙空间，移除整形材料以形成第三空隙空间，以及沉积更换的金属栅极材料以填充第三空隙空间。

    Methods of Forming Stressed Silicon-Carbon Areas in an NMOS Transistor
    7.
    发明申请
    Methods of Forming Stressed Silicon-Carbon Areas in an NMOS Transistor 有权
    在NMOS晶体管中形成强化硅 - 碳区域的方法

    公开(公告)号：US20130052783A1

    公开(公告)日：2013-02-28

    申请号：US13216921

    申请日：2011-08-24

    申请人： Stefan Flachowsky ,  Ralf Illgen ,  Thilo Scheiper ,  Jan Hoentschel

    发明人： Stefan Flachowsky ,  Ralf Illgen ,  Thilo Scheiper ,  Jan Hoentschel

    IPC分类号： H01L21/336 ,  H01L21/265

    CPC分类号： H01L21/26513 ,  H01L21/26526 ,  H01L29/7848

    摘要： Disclosed herein are various methods of forming stressed silicon-carbon areas in an NMOS transistor device. In one example, a method disclosed herein includes forming a layer of amorphous carbon above a surface of a semiconducting substrate comprising a plurality of N-doped regions and performing an ion implantation process on the layer of amorphous carbon to dislodge carbon atoms from the layer of amorphous carbon and to drive the dislodged carbon atoms into the N-doped regions in the substrate.

    摘要翻译： 这里公开了在NMOS晶体管器件中形成应力硅 - 碳区域的各种方法。 在一个实例中，本文公开的方法包括在包括多个N掺杂区域的半导体衬底的表面上方形成无定形碳层，并对无定形碳层进行离子注入工艺以将碳原子从层 并且将移动的碳原子驱动到衬底中的N掺杂区域中。

    Implantation of hydrogen to improve gate insulation layer-substrate interface
    8.
    发明授权
    Implantation of hydrogen to improve gate insulation layer-substrate interface 有权
    注入氢气以改善栅极绝缘层 - 衬底界面

    公开(公告)号：US08647951B2

    公开(公告)日：2014-02-11

    申请号：US13216862

    申请日：2011-08-24

    申请人： Stefan Flachowsky ,  Ralf Illgen ,  Jan Hoentschel

    发明人： Stefan Flachowsky ,  Ralf Illgen ,  Jan Hoentschel

    IPC分类号： H01L21/38 ,  H01L21/336

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/32155 ,  H01L21/823857

    摘要： Generally, the present disclosure is directed to various methods of making a semiconductor device by implanting hydrogen or hydrogen-containing clusters to improve the interface between a gate insulation layer and the substrate. One illustrative method disclosed herein involves forming a gate insulation layer on a substrate, forming a layer of gate electrode material above the gate insulation material and performing an ion implantation process with a material comprising hydrogen or a hydrogen-containing compound to introduce the hydrogen or hydrogen-containing compound proximate an interface between the gate insulation layer and said substrate with a concentration of the implanted hydrogen or hydrogen-containing compound being at least 1e10 ions/cm2.

    摘要翻译： 通常，本公开涉及通过注入氢或含氢簇来改善栅极绝缘层和衬底之间的界面来制造半导体器件的各种方法。 本文公开的一种说明性方法包括在衬底上形成栅极绝缘层，在栅极绝缘材料上方形成栅极材料层，并用含有氢或含氢化合物的材料进行离子注入工艺以引入氢或氢 邻近于栅极绝缘层和所述衬底之间的界面，其中所注入的氢或含氢化合物的浓度为至少1e 10离子/ cm 2。

    Implantation of Hydrogen to Improve Gate Insulation Layer-Substrate Interface
    9.
    发明申请
    Implantation of Hydrogen to Improve Gate Insulation Layer-Substrate Interface 有权
    注入氢来改善栅极绝缘层 - 基板界面

    公开(公告)号：US20130052782A1

    公开(公告)日：2013-02-28

    申请号：US13216862

    申请日：2011-08-24

    申请人： Stefan Flachowsky ,  Ralf Illgen ,  Jan Hoentschel

    发明人： Stefan Flachowsky ,  Ralf Illgen ,  Jan Hoentschel

    IPC分类号： H01L21/336

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/32155 ,  H01L21/823857

    摘要： Generally, the present disclosure is directed to various methods of making a semiconductor device by implanting hydrogen or hydrogen-containing clusters to improve the interface between a gate insulation layer and the substrate. One illustrative method disclosed herein involves forming a gate insulation layer on a substrate, forming a layer of gate electrode material above the gate insulation material and performing an ion implantation process with a material comprising hydrogen or a hydrogen-containing compound to introduce the hydrogen or hydrogen-containing compound proximate an interface between the gate insulation layer and said substrate with a concentration of the implanted hydrogen or hydrogen-containing compound being at least 1e10 ions/cm2.

    摘要翻译： 通常，本公开涉及通过注入氢或含氢簇来改善栅极绝缘层和衬底之间的界面来制造半导体器件的各种方法。 本文公开的一种说明性方法包括在衬底上形成栅极绝缘层，在栅极绝缘材料上方形成栅极材料层，并用含有氢或含氢化合物的材料进行离子注入工艺以引入氢或氢 邻近于栅极绝缘层和所述衬底之间的界面，其中所注入的氢或含氢化合物的浓度为至少1e 10离子/ cm 2。

    Replacement gate FinFET structures with high mobility channel
    10.
    发明授权
    Replacement gate FinFET structures with high mobility channel 有权
    具有高迁移率通道的替代栅极FinFET结构

    公开(公告)号：US09224840B2

    公开(公告)日：2015-12-29

    申请号：US13545597

    申请日：2012-07-10

    申请人： Stefan Flachowsky ,  Ralf Illgen ,  Jan Hoentschel

    发明人： Stefan Flachowsky ,  Ralf Illgen ,  Jan Hoentschel

    IPC分类号： H01L27/088 ,  H01L21/20 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10

    CPC分类号： H01L29/66795 ,  H01L29/1054 ,  H01L29/66545 ,  H01L29/7851

    摘要： A method is disclosed for fabricating an integrated circuit in a replacement-gate process flow utilizing a dummy-gate structure overlying a plurality of fin structures. The method includes removing the dummy-gate structure to form a first void space, depositing a shaper material to fill the first void space, removing a portion of the plurality of fin structures to form a second void space, epitaxially growing a high carrier mobility material to fill the second void space, removing the shaper material to form a third void space, and depositing a replacement metal gate material to fill the third void space.

    摘要翻译： 公开了一种利用覆盖多个翅片结构的虚拟栅极结构在替代栅极工艺流程中制造集成电路的方法。 该方法包括去除伪栅极结构以形成第一空隙空间，沉积成形材料以填充第一空隙空间，去除多个翅片结构的一部分以形成第二空隙空间，外延生长高载流子迁移率材料 以填充第二空隙空间，移除整形材料以形成第三空隙空间，以及沉积更换的金属栅极材料以填充第三空隙空间。