公开(公告)号：US20130055171A1

公开(公告)日：2013-02-28

申请号：US13401820

申请日：2012-02-21

申请人： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke

发明人： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/144 ,  G03F1/70 ,  G03F7/70466 ,  G06F2217/08 ,  G06F2217/12

摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.

摘要翻译： 公开了一种基于具有待成像在基板上的特征的目标图案产生互补掩模以在多次曝光光刻成像过程中使用的方法。 该方法包括定义对应于目标图案的初始H掩模和初始V掩模; 识别V面罩中H面罩和垂直关键特征的水平关键特征; 将第一相移和第一百分比传输分配给​​要在H掩模中形成的水​​平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。 该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。

公开(公告)号：US20110236808A1

公开(公告)日：2011-09-29

申请号：US13155259

申请日：2011-06-07

申请人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

公开(公告)号：US07981576B2

公开(公告)日：2011-07-19

申请号：US12890494

申请日：2010-09-24

申请人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00 ,  G03F1/14 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

摘要翻译： 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

公开(公告)号：US07774736B2

公开(公告)日：2010-08-10

申请号：US11714147

申请日：2007-03-06

申请人： Douglas Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Duan-Fu Hsu

发明人： Douglas Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Duan-Fu Hsu

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F7/70441

摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.

摘要翻译： 一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。 所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 确定基于所述目标图案的干涉图，所述干涉图定义建构性干扰的区域和要成像的至少一个要素与邻近所述至少一个特征的场区域之间的相消干涉区域; 并且基于建设性干扰的区域和破坏性干扰的区域将辅助特征放置在掩模设计中。

公开(公告)号：US07620930B2

公开(公告)日：2009-11-17

申请号：US11208015

申请日：2005-08-22

申请人： Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G06F17/50

CPC分类号： G03F7/70441 ,  G03F1/36

摘要： A method of generating a mask is provided that optimizes the placement and shape of optical proximity correction (OPC) features such as scattering bars. According to some aspects, the method includes model-based techniques for determining where to place assist features within the design, thereby eliminating the need for experienced mask designers to perform OPC, and also substantially reducing the time required to determine an acceptable OPC solution. According to further aspects, the method provides an OPC assist feature placement technique that enhances the resulting depth of focus even when imaging features have dimensions on the order of a quarter of the wavelength of the imaging system.

摘要翻译： 提供了一种产生掩模的方法，其优化了诸如散射条之类的光学邻近校正（OPC）特征的放置和形状。 根据一些方面，该方法包括用于确定在设计中放置辅助特征的位置的基于模型的技术，从而消除了对有经验的掩模设计者执行OPC的需要，并且还显着减少了确定可接受的OPC解决方案所需的时间。 根据另外的方面，该方法提供了一种OPC辅助特征放置技术，即使当成像特征具有成像系统的四分之一波长的尺寸时，也可增强所得到的聚焦深度。

公开(公告)号：US07523438B2

公开(公告)日：2009-04-21

申请号：US11108665

申请日：2005-04-19

申请人： Michael Hsu ,  Stephen Hsu ,  Thomas Laidig ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Michael Hsu ,  Stephen Hsu ,  Thomas Laidig ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G03F1/32 ,  G03F7/70091 ,  G03F7/70125 ,  G03F7/70283 ,  G03F7/70466 ,  G03F7/70591

摘要： A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.

摘要翻译： 一种通过使用光学曝光工具将对应于利用高透射衰减相移掩模的集成电路的光刻图案光学转移到半导体衬底上的方法。 该方法包括以下步骤：产生对应于光刻图案的衍射图案，其中衍射图案表示对应于光刻图案的多个空间频率分量; 确定哪个空间频率分量需要被光学曝光工具中的透镜捕获，以便准确地再现光刻图案; 确定所述光学曝光工具所需的一组照明条件以捕获准确地再现所述光刻图案所需的空间频率分量; 并用该组照明条件照亮高透射衰减相移掩模。

公开(公告)号：US07514183B2

公开(公告)日：2009-04-07

申请号：US10981762

申请日：2004-11-05

申请人： Stephen D. Hsu ,  Jang Fung Chen ,  Xuelong Shi ,  Douglas Van Den Broeke

发明人： Stephen D. Hsu ,  Jang Fung Chen ,  Xuelong Shi ,  Douglas Van Den Broeke

IPC分类号： G03F1/00 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70441

摘要： A method of generating a mask for use in a photolithography process. The method includes the steps of determining a target mask pattern having a plurality of features to be imaged and an illumination system to be utilized to image the mask; identifying a critical pitch within the target pattern and optimizing illumination settings of the illumination system for imaging the critical pitch; identifying a forbidden pitch within the target pattern; and modifying the transmittance of the features having a pitch equal to or substantially equal to the forbidden pitch such that the exposure latitude of the features equal to or substantially equal to the forbidden pitch is increased.

摘要翻译： 一种生成用于光刻工艺的掩模的方法。 该方法包括以下步骤：确定具有要成像的多个特征的目标掩模图案和要用于对掩模进行成像的照明系统; 识别所述目标图案内的临界音调并且优化所述照明系统的照明设置以对所述关键音调成像; 识别目标模式内的禁止音高; 以及修改具有等于或基本上等于禁止间距的间距的特征的透射率，使得等于或基本上等于禁止间距的特征的曝光宽容度增加。

公开(公告)号：US08111921B2

公开(公告)日：2012-02-07

申请号：US11898646

申请日：2007-09-13

申请人： Duan-Fu Stephen Hsu ,  Jung Chul Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Jung Chul Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G06K9/00 ,  G06F17/50 ,  H04N7/16

CPC分类号： G06T7/0004 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70466 ,  G03F7/70475

摘要： A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.

摘要翻译： 一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。 该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

公开(公告)号：US08040573B2

公开(公告)日：2011-10-18

申请号：US11889587

申请日：2007-08-14

申请人： Xuelong Shi ,  Jang Fung Chen ,  Douglas Van Den Broeke

发明人： Xuelong Shi ,  Jang Fung Chen ,  Douglas Van Den Broeke

IPC分类号： G10K7/06 ,  H04N1/00

CPC分类号： G03F7/705

摘要： A method of determining calibration test patterns to be utilized to calibrate a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining design rules associated with a given imaging process; defining a model equation representing the imaging performance of the optical imaging system; determining a boundary of an imaging signal space based on the design rules; selecting calibration patterns based on the boundary of the imaging signal space such that the calibration patterns are on the boundary or within the boundary of the imaging signal space; and storing the selected calibration test patterns, where the calibration test patterns are utilized to calibrate the model for simulating the imaging performance of the optical imaging system.

摘要翻译： 确定用于校准用于模拟光学成像系统的成像性能的模型的校准测试图案的方法。 该方法包括定义与给定成像过程相关联的设计规则的步骤; 定义表示光学成像系统的成像性能的模型方程; 基于设计规则确定成像信号空间的边界; 基于成像信号空间的边界选择校准图案，使得校准图案位于成像信号空间的边界或边界内; 并存储所选择的校准测试图案，其中使用校准测试图案来校准用于模拟光学成像系统的成像性能的模型。

公开(公告)号：US07998355B2

公开(公告)日：2011-08-16

申请号：US11822538

申请日：2007-07-06

申请人： Douglas Van Den Broeke ,  Kurt E. Wampler ,  Jang Fung Chen

发明人： Douglas Van Den Broeke ,  Kurt E. Wampler ,  Jang Fung Chen

IPC分类号： B44C1/22 ,  C03C15/00

CPC分类号： G03F1/32 ,  G03F1/34

摘要： A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of depositing a layer of transmissive material having a predefined percentage transmission on a substrate; depositing a layer of opaque material on the transmissive material; etching a portion of the substrate, the substrate being etched to a depth based on an etching selectivity between the transmissive layer and the substrate; exposing a portion of the transmissive layer by etching the opaque material; etching the exposed portion of the transmissive layer so as to expose an upper surface of the substrate; where the exposed portions of the substrate and the etched portions of the substrate exhibit a predefined phase shift relative to one another with respect to an illumination signal.

摘要翻译： 一种生成用于打印包括多个特征的图案的掩模的方法。 该方法包括以下步骤：在衬底上沉积具有预定百分比透射率的透射材料层; 在透射材料上沉积不透明材料层; 蚀刻衬底的一部分，基于在透射层和衬底之间的蚀刻选择性，将衬底蚀刻到深度; 通过蚀刻不透明材料暴露透射层的一部分; 蚀刻透射层的暴露部分以暴露衬底的上表面; 其中衬底的暴露部分和衬底的蚀刻部分相对于照明信号相对于彼此表现出预定的相移。