公开(公告)号：US07514183B2

公开(公告)日：2009-04-07

申请号：US10981762

申请日：2004-11-05

申请人： Stephen D. Hsu ,  Jang Fung Chen ,  Xuelong Shi ,  Douglas Van Den Broeke

发明人： Stephen D. Hsu ,  Jang Fung Chen ,  Xuelong Shi ,  Douglas Van Den Broeke

IPC分类号： G03F1/00 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70441

摘要： A method of generating a mask for use in a photolithography process. The method includes the steps of determining a target mask pattern having a plurality of features to be imaged and an illumination system to be utilized to image the mask; identifying a critical pitch within the target pattern and optimizing illumination settings of the illumination system for imaging the critical pitch; identifying a forbidden pitch within the target pattern; and modifying the transmittance of the features having a pitch equal to or substantially equal to the forbidden pitch such that the exposure latitude of the features equal to or substantially equal to the forbidden pitch is increased.

摘要翻译： 一种生成用于光刻工艺的掩模的方法。 该方法包括以下步骤：确定具有要成像的多个特征的目标掩模图案和要用于对掩模进行成像的照明系统; 识别所述目标图案内的临界音调并且优化所述照明系统的照明设置以对所述关键音调成像; 识别目标模式内的禁止音高; 以及修改具有等于或基本上等于禁止间距的间距的特征的透射率，使得等于或基本上等于禁止间距的特征的曝光宽容度增加。

公开(公告)号：US08040573B2

公开(公告)日：2011-10-18

申请号：US11889587

申请日：2007-08-14

申请人： Xuelong Shi ,  Jang Fung Chen ,  Douglas Van Den Broeke

发明人： Xuelong Shi ,  Jang Fung Chen ,  Douglas Van Den Broeke

IPC分类号： G10K7/06 ,  H04N1/00

CPC分类号： G03F7/705

摘要： A method of determining calibration test patterns to be utilized to calibrate a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining design rules associated with a given imaging process; defining a model equation representing the imaging performance of the optical imaging system; determining a boundary of an imaging signal space based on the design rules; selecting calibration patterns based on the boundary of the imaging signal space such that the calibration patterns are on the boundary or within the boundary of the imaging signal space; and storing the selected calibration test patterns, where the calibration test patterns are utilized to calibrate the model for simulating the imaging performance of the optical imaging system.

摘要翻译： 确定用于校准用于模拟光学成像系统的成像性能的模型的校准测试图案的方法。 该方法包括定义与给定成像过程相关联的设计规则的步骤; 定义表示光学成像系统的成像性能的模型方程; 基于设计规则确定成像信号空间的边界; 基于成像信号空间的边界选择校准图案，使得校准图案位于成像信号空间的边界或边界内; 并存储所选择的校准测试图案，其中使用校准测试图案来校准用于模拟光学成像系统的成像性能的模型。

公开(公告)号：US07594199B2

公开(公告)日：2009-09-22

申请号：US10756829

申请日：2004-01-14

申请人： Robert John Socha ,  Xuelong Shi ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Robert John Socha ,  Xuelong Shi ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G06F17/50

CPC分类号： G03F7/70441 ,  G03F1/36 ,  G03F7/70125

摘要： Disclosed concepts include a method of optimizing an illumination profile of a pattern to be formed in a surface of a substrate. Illumination is optimized by defining a transmission cross coefficient (“TCC”) function determined in accordance with an illumination pupil and a projection pupil corresponding to an illuminator, representing at least one resolvable feature of a mask to be printed on the substrate by at least one impulse function, and creating an interference map of a predetermined order based on the at least one impulse function and the TCC function, wherein the interference map represents the at least one resolvable feature to be printed on the substrate and areas of destructive interference.

摘要翻译： 公开的概念包括优化待形成在基板的表面中的图案的照明轮廓的方法。 通过定义根据照明光瞳确定的透射交叉系数（“TCC”）函数和对应于照明器的投影光瞳来优化照明，其表示待印刷在基板上的掩模的至少一个可分辨特征至少一个 脉冲功能，以及基于所述至少一个脉冲功能和所述TCC功能创建预定顺序的干涉图，其中所述干涉图表示要印刷在所述基板上的所述至少一个可分辨特征以及相消干涉区域。

公开(公告)号：US07550235B2

公开(公告)日：2009-06-23

申请号：US10933496

申请日：2004-09-03

申请人： Xuelong Shi ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Douglas Van Den Broeke

发明人： Xuelong Shi ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Douglas Van Den Broeke

IPC分类号： G03F1/02

CPC分类号： G03F7/705 ,  G03F1/36

摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.

摘要翻译： 一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。 所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 基于所述目标图案来确定第一干涉图，所述目标图案定义要成像的至少一个要素与邻近所述至少一个特征的场区域之间的建构性干扰的区域; 基于由第一干涉图定义的建构性干扰的区域，在掩模设计中放置具有第一相位的第一组辅助特征; 基于所述第一组辅助特征确定第二干涉图，所述第一组辅助特征限定所述第一组辅助特征的辅助特征之间的建构性干扰的区域和与所述第一组辅助特征的所述辅助特征中的至少一个邻近的场区域; 以及基于由所述第二干涉图定义的构成性干扰的区域，将具有第二相位的第二组辅助特征放置在所述掩模设计中，其中所述第一相位不等于所述第二相位。

公开(公告)号：US07506299B2

公开(公告)日：2009-03-17

申请号：US10975342

申请日：2004-10-29

申请人： Robert John Socha ,  Xuelong Shi ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Robert John Socha ,  Xuelong Shi ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G06F17/50

CPC分类号： G03F7/70441 ,  G03F1/36 ,  G03F7/70125

摘要： Disclosed concepts include a method of, and program product for, optimizing an illumination profile of a pattern to be formed in a surface of a substrate relative to a given mask. Steps include mathematically representing resolvable feature(s) from the given mask, generating an interference map representation from the previous step, modifying the interference map representation to maximize intensity corresponding to the resolvable features, and determining assist feature size(s) such that intensity side lobes do not print.

摘要翻译： 公开的概念包括用于优化相对于给定掩模在衬底表面中形成的图案的照明轮廓的方法和程序产品。 步骤包括在数学上表示来自给定掩码的可解析特征，从前一步骤生成干涉图表示，修改干涉图表示以最大化对应于可解析特征的强度，以及确定辅助特征尺寸，使强度侧 裂片不打印。

公开(公告)号：US07376930B2

公开(公告)日：2008-05-20

申请号：US10878490

申请日：2004-06-29

申请人： Kurt E. Wampler ,  Douglas Van Den Broeke ,  Uwe Hollerbach ,  Xuelong Shi ,  Jang Fung Chen

发明人： Kurt E. Wampler ,  Douglas Van Den Broeke ,  Uwe Hollerbach ,  Xuelong Shi ,  Jang Fung Chen

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G03F1/36 ,  G03F7/70433 ,  G03F7/70441

摘要： Disclosed concepts include a method, program product and apparatus for generating assist features for a pattern to be formed on the surface of a substrate by generating an image field map corresponding to the pattern. Characteristics are extracted from the image field map, and assist features are generated for the pattern in accordance with the characteristics extracted in step. The assist features may be oriented relative to a dominant axis of a contour of the image field map. Also, the assist features may be polygon-shaped and sized to surround the contour or relative to the inside of the contour. Moreover, the assist features may be placed in accordance with extrema identified from the image field map. Utilizing the image field map, a conventional and complex two-dimensional rules-based approach for generating assist feature can be obviated.

摘要翻译： 所公开的概念包括通过产生对应于图案的图像场图来产生要形成在基板的表面上的图案的辅助特征的方法，程序产品和装置。 从图像场图中提取特征，并根据步骤中提取的特征为图案生成辅助特征。 辅助特征可以相对于图像场图的轮廓的主轴定向。 此外，辅助特征可以是多边形形状并且尺寸设计成围绕轮廓或相对于轮廓的内部。 此外，可以根据从图像场地图识别的极值放置辅助特征。 利用图像场图，可以避免用于产生辅助特征的常规和复杂的基于二维规则的方法。

公开(公告)号：US20130055171A1

公开(公告)日：2013-02-28

申请号：US13401820

申请日：2012-02-21

申请人： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke

发明人： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/144 ,  G03F1/70 ,  G03F7/70466 ,  G06F2217/08 ,  G06F2217/12

摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.

摘要翻译： 公开了一种基于具有待成像在基板上的特征的目标图案产生互补掩模以在多次曝光光刻成像过程中使用的方法。 该方法包括定义对应于目标图案的初始H掩模和初始V掩模; 识别V面罩中H面罩和垂直关键特征的水平关键特征; 将第一相移和第一百分比传输分配给​​要在H掩模中形成的水​​平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。 该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。

公开(公告)号：US20110236808A1

公开(公告)日：2011-09-29

申请号：US13155259

申请日：2011-06-07

申请人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

公开(公告)号：US07981576B2

公开(公告)日：2011-07-19

申请号：US12890494

申请日：2010-09-24

申请人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00 ,  G03F1/14 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

摘要翻译： 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

公开(公告)号：US07774736B2

公开(公告)日：2010-08-10

申请号：US11714147

申请日：2007-03-06

申请人： Douglas Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Duan-Fu Hsu

发明人： Douglas Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Duan-Fu Hsu

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F7/70441

摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.

摘要翻译： 一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。 所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 确定基于所述目标图案的干涉图，所述干涉图定义建构性干扰的区域和要成像的至少一个要素与邻近所述至少一个特征的场区域之间的相消干涉区域; 并且基于建设性干扰的区域和破坏性干扰的区域将辅助特征放置在掩模设计中。