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    Memory devices
    1.
    发明授权
    Memory devices 有权

    公开(公告)号：US10242999B2

    公开(公告)日：2019-03-26

    申请号：US15463138

    申请日：2017-03-20

    申请人： Jang Gn Yun ,  Sun Young Kim ,  Hoo Sung Cho

    发明人： Jang Gn Yun ,  Sun Young Kim ,  Hoo Sung Cho

    IPC分类号： H01L23/522 ,  H01L23/528 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11575 ,  H01L27/11582

    摘要： A memory device includes a pair of common source lines disposed on a substrate spaced apart from each other and extended in a first direction; a plurality of ground select lines disposed between the pair of common source lines, extended in the first direction, and disposed on the same level; a plurality of word lines disposed on the plurality of ground select lines between the pair of common source lines, extended in the first direction, and disposed on the same level, at least a portion of the plurality of word lines being connected by a connection electrode; and a plurality of first separation insulating patterns disposed between individual ground select lines of a portion of the plurality of ground select lines and extended in the first direction. The at least portion of the plurality of word lines is connected by a connection electrode.

    Memory device
    3.
    发明授权
    Memory device 有权

    公开(公告)号：US10559583B2

    公开(公告)日：2020-02-11

    申请号：US15415248

    申请日：2017-01-25

    申请人： Su Jin Park ,  Sun Young Kim ,  Jang Gn Yun

    发明人： Su Jin Park ,  Sun Young Kim ,  Jang Gn Yun

    IPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/11575 ,  H01L27/1157 ,  H01L23/528 ,  H01L27/11556

    摘要： A memory device includes gate electrode layers stacked on an upper surface of a substrate and each including a plurality of unit electrodes extending in a first direction, and a plurality of connecting electrodes connecting the unit electrodes to each other. The memory device also includes channel structures extending through the gate electrode layers in a direction perpendicular to the upper surface of the substrate, first common source lines extending in the first direction and interposed between the unit electrodes, and second common source lines extending in the first direction between the first common source lines and each having a first line and a second line separated from each other in the first direction by the connecting electrodes.

    SEMICONDUCTOR DEVICE HAVING CHANNEL HOLES
    5.
    发明申请
    SEMICONDUCTOR DEVICE HAVING CHANNEL HOLES 有权
    具有通道孔的半导体器件

    公开(公告)号：US20170047342A1

    公开(公告)日：2017-02-16

    申请号：US15173888

    申请日：2016-06-06

    申请人： SUNG MIN HWANG ,  Jang Gn Yun ,  Ahn Sik Moon ,  Se Jun Park ,  Zhiliang Xia ,  Joon Sung Lim

    发明人： SUNG MIN HWANG ,  Jang Gn Yun ,  Ahn Sik Moon ,  Se Jun Park ,  Zhiliang Xia ,  Joon Sung Lim

    IPC分类号： H01L27/115 ,  H01L23/528 ,  H01L23/522

    CPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573

    摘要： A semiconductor device includes a gate stack including gate electrodes stacked vertically on a substrate. Channel holes penetrate through the gate stack to extend vertically to the substrate. Each of the channel holes includes a channel region. First channel pads are each disposed at an end of a respective channel hole opposite the substrate. Each of the first channel pads includes at least one first conductivity-type impurity. Second channel pads are each disposed at an end of a respective channel hole opposite the substrate. Each of the second channel pads includes at least one second conductivity-type impurity.

    摘要翻译： 半导体器件包括栅极堆叠，其包括垂直堆叠在衬底上的栅电极。 通道孔穿过栅极堆叠，以垂直于衬底延伸。 每个通道孔包括通道区域。 第一通道焊盘各自设置在与衬底相对的相应通道孔的端部。 每个第一通道焊盘包括至少一种第一导电型杂质。 第二通道焊盘各自设置在与衬底相对的相应通道孔的端部。 每个第二通道焊盘包括至少一个第二导电类型的杂质。