公开(公告)号：US20240213393A1

公开(公告)日：2024-06-27

申请号：US18597953

申请日：2024-03-07

Applicant: Japan Display Inc.

Inventor： Masashi TSUBUKU ,  Takanori TSUNASHIMA ,  Marina MOCHIZUKI

IPC: H01L31/12 ,  G06F1/16 ,  H01L31/101

CPC classification number: H01L31/125 ,  G06F1/1605 ,  H01L31/1016

Abstract: A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

公开(公告)号：US20230134613A1

公开(公告)日：2023-05-04

申请号：US17979522

申请日：2022-11-02

Applicant: Japan Display Inc.

Inventor： Takanori TSUNASHIMA

IPC: H01L27/146 ,  G06V40/13

Abstract: According to an aspect, a detection device includes: a substrate; a plurality of first electrodes arranged on the substrate; an insulating film provided between the first electrodes adjacent to each other; a plurality of photodiodes provided so as to correspond to the first electrodes; and a second electrode provided across the photodiodes. The photodiodes each comprise a first carrier transport layer, an active layer, and a second carrier transport layer stacked on the substrate. The first carrier transport layer, the active layer, and the second carrier transport layer are provided so as to cover the first electrodes and the insulating film between the adjacent first electrodes.

公开(公告)号：US20230005291A1

公开(公告)日：2023-01-05

申请号：US17940239

申请日：2022-09-08

Applicant: Japan Display Inc.

Inventor： Makoto UCHIDA ,  Takanori TSUNASHIMA ,  Masahiro TADA ,  Tomoyuki ITO ,  Takashi NAKAMURA

IPC: G06V40/13 ,  H01L27/146

Abstract: A photodiode array is provided and includes insulating substrate; photodiodes arrayed in detection region of insulating substrate, photodiodes configured to output signal in accordance with light incident on photodiodes; first switching elements corresponding to photodiodes and including first semiconductor made of oxide semiconductor; gate lines coupled with first switching elements and extending in first direction; signal lines coupled with first switching elements and extending in second direction intersecting first direction; and gate line drive circuit including second switching element that includes second semiconductor made of polycrystalline silicone, gate line drive circuit being provided in peripheral region outside detection region and configured to drive gate lines, wherein photodiodes includes translucent conductive layer that is cathode, and translucent conductive layer overlaps none of signal lines in plan view.

公开(公告)号：US20210012082A1

公开(公告)日：2021-01-14

申请号：US17033040

申请日：2020-09-25

Applicant: Japan Display Inc.

Inventor： Makoto UCHIDA ,  Takanori TSUNASHIMA ,  Masahiro TADA ,  Tomoyuki ITO ,  Takashi NAKAMURA

IPC: G06K9/00 ,  H01L27/146

Abstract: A fingerprint detection apparatus comprising: an insulating substrate; a plurality of photoelectric conversion elements arrayed in a detection region of the insulating substrate, each of the photoelectric conversion elements configured to output a signal in accordance with light incident on each of the photoelectric conversion elements; first switching element, each corresponding to each of the photoelectric conversion elements and including a first semiconductor made of oxide semiconductor; a plurality of gate lines coupled with the first switching elements and extending in a first direction; a plurality of signal lines coupled with the first switching elements and extending in a second direction intersecting the first direction; and a gate line drive circuit including a second switching element that includes a second semiconductor made of polycrystalline silicone, the gate line drive circuit being provided in a peripheral region outside the detection region and configured to drive the gate lines.

公开(公告)号：US20220310667A1

公开(公告)日：2022-09-29

申请号：US17840621

申请日：2022-06-15

Applicant: Japan Display Inc.

Inventor： Takanori TSUNASHIMA

IPC: H01L27/12 ,  H01L27/02

Abstract: According to one embodiment, a semiconductor device including, a panel including an inorganic film, and a first pad and a second pad positioned on the inorganic film, and a line substrate including a first connection line electrically connected to the first pad, and a second connection line electrically connected to the second pad, the line substrate positioned on the panel, wherein the inorganic film includes a first cut portion overlapping the first connection line, a second cut portion overlapping the second connection line, and a first extension portion between the first cut portion and the second cut portion, and the first cut portion, the second cut portion, and the first extension portion extend to a first side of the panel.

公开(公告)号：US20220077344A1

公开(公告)日：2022-03-10

申请号：US17527192

申请日：2021-11-16

Applicant: Japan Display Inc.

Inventor： Masashi TSUBUKU ,  Takanori TSUNASHIMA ,  Marina MOCHIZUKI

IPC: H01L31/12 ,  H01L31/101 ,  G06F1/16

Abstract: A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

公开(公告)号：US20210098507A1

公开(公告)日：2021-04-01

申请号：US17120317

申请日：2020-12-14

Applicant: Japan Display Inc.

Inventor： Takanori TSUNASHIMA

IPC: H01L27/12 ,  H01L27/02

Abstract: According to one embodiment, a semiconductor device including, a panel including an inorganic film, and a first pad and a second pad positioned on the inorganic film, and a line substrate including a first connection line electrically connected to the first pad, and a second connection line electrically connected to the second pad, the line substrate positioned on the panel, wherein the inorganic film includes a first cut portion overlapping the first connection line, a second cut portion overlapping the second connection line, and a first extension portion between the first cut portion and the second cut portion, and the first cut portion, the second cut portion, and the first extension portion extend to a first side of the panel.

公开(公告)号：US20250015508A1

公开(公告)日：2025-01-09

申请号：US18893986

申请日：2024-09-24

Applicant: Japan Display Inc.

Inventor： Daiichi SUZUKI ,  Takanori TSUNASHIMA ,  Masayuki IKARI ,  Shinichiro OKA ,  Mitsutaka OKITA ,  Kazuki MATSUNAGA

IPC: H01Q15/14

Abstract: A reflect array includes a plurality of patch electrodes arranged spaced apart and interconnected to an incident surface of a radio wave, a plurality of control electrodes arranged spaced apart to correspond to the plurality of patch electrodes and disposed on a rear side of the plurality of patch electrodes, a liquid crystal layer between the plurality of patch electrodes and the plurality of control electrodes, and an auxiliary electrode disposed to overlap a separated region of the plurality of control electrodes.

公开(公告)号：US20240361250A1

公开(公告)日：2024-10-31

申请号：US18644439

申请日：2024-04-24

Applicant: Japan Display Inc.

Inventor： Akihiko FUJISAWA ,  Takanori TSUNASHIMA ,  Kaoru ITO ,  Shiori TEZEN

IPC: G01N21/84

CPC classification number: G01N21/84

Abstract: According to an aspect, a detection device includes: a planar detection device including photodetection elements arranged in a planar configuration; a light source device disposed so as to face the planar detection device; and a light-transmitting placement substrate that is disposed between the planar detection device and the light source device and configured to allow objects to be placed thereon. The planar detection device includes: a detection area where sensor pixels including the photodetection elements are arranged in a first direction and a second direction orthogonal to the first direction; a drive circuit configured to simultaneously supply drive signals to the sensor pixels arranged in the first direction; and a selection circuit configured to select a detection signal for each of the sensor pixels arranged in the second direction. The detection area is divided in the second direction into detection blocks. The drive circuit is provided for each detection block.

公开(公告)号：US20240170602A1

公开(公告)日：2024-05-23

申请号：US18425774

申请日：2024-01-29

Applicant: Japan Display Inc. ,  The University of Tokyo

Inventor： Hirofumi KATO ,  Takanori TSUNASHIMA ,  Makoto UCHIDA ,  Takashi NAKAMURA ,  Akio TAKIMOTO ,  Takao SOMEYA ,  Tomoyuki YOKOTA

IPC: H01L31/12 ,  G01J1/04 ,  G01J1/42 ,  G06T1/00 ,  G06V40/13 ,  H01L27/146 ,  H01L31/167

CPC classification number: H01L31/12 ,  G01J1/0492 ,  G01J1/4228 ,  G06T1/0007 ,  G06V40/1318 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14636 ,  H01L31/167 ,  A61B2562/0233 ,  G06V40/14

Abstract: A detection device according to an aspect includes: a sensor base; a plurality of photoelectric conversion elements that are provided in a detection area of the sensor base and are configured to receive light incident thereon and output signals corresponding to the received light; a plurality of switching elements provided in the respective photoelectric conversion elements; a plurality of gate lines that are coupled to the switching elements and extend in a first direction; a first light source configured to emit first light having a first maximum emission wavelength; and a second light source configured to emit second light having a second maximum emission wavelength.