公开(公告)号：US07867403B2

公开(公告)日：2011-01-11

申请号：US11756074

申请日：2007-05-31

申请人： Jason Plumhoff ,  Larry Ryan ,  John Nolan ,  David Johnson ,  Russell Westerman

发明人： Jason Plumhoff ,  Larry Ryan ,  John Nolan ,  David Johnson ,  Russell Westerman

IPC分类号： B44C1/22 ,  C25F3/00

CPC分类号： H01J37/32623 ,  G03F1/80 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334

摘要： The present invention provides a method for processing a photolithographic substrate, comprising the placement of the photolithographic substrate on a support member in a chamber wherein the photolithographic substrate has an initial temperature of about zero degrees Celsius to about fifty degrees Celsius. A heat transfer fluid is introduced into the chamber to cool the photolithographic substrate to a target temperature of less than about zero degrees Celsius to less than about minus forty degrees Celsius. The cooled photolithographic substrate is subjected to a plasma process before the temperature of the cooled photolithographic substrate reaches the initial temperature.

摘要翻译： 本发明提供一种用于处理光刻基片的方法，包括将光刻基片放置在腔室中的支撑构件上，其中光刻基片具有约零摄氏度至约五十摄氏度的初始温度。 将传热流体引入室中以将光刻基板冷却至小于约零摄氏度至小于零下四十度的目标温度。 在冷却的光刻基板的温度达到初始温度之前，对冷却的光刻基板进行等离子体处理。

公开(公告)号：US20080149597A1

公开(公告)日：2008-06-26

申请号：US11756074

申请日：2007-05-31

申请人： Jason Plumhoff ,  Larry Ryan ,  John Nolan ,  David Johnson ,  Russell Westerman

发明人： Jason Plumhoff ,  Larry Ryan ,  John Nolan ,  David Johnson ,  Russell Westerman

IPC分类号： B44C1/22

CPC分类号： H01J37/32623 ,  G03F1/80 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334

摘要： The present invention provides a method for processing a photolithographic substrate, comprising the placement of the photolithographic substrate on a support member in a chamber wherein the photolithographic substrate has an initial temperature of about zero degrees Celsius to about fifty degrees Celsius. A heat transfer fluid is introduced into the chamber to cool the photolithographic substrate to a target temperature of less than about zero degrees Celsius to less than about minus forty degrees Celsius. The cooled photolithographic substrate is subjected to a plasma process before the temperature of the cooled photolithographic substrate reaches the initial temperature.

摘要翻译： 本发明提供一种用于处理光刻基片的方法，包括将光刻基片放置在腔室中的支撑构件上，其中光刻基片具有约零摄氏度至约五十摄氏度的初始温度。 将传热流体引入室中以将光刻基板冷却至小于约零摄氏度至小于零下四十度的目标温度。 在冷却的光刻基板的温度达到初始温度之前，对冷却的光刻基板进行等离子体处理。

公开(公告)号：US20080035606A1

公开(公告)日：2008-02-14

申请号：US11834299

申请日：2007-08-06

申请人： Jason Plumhoff ,  Sunil Srinivasan ,  David Johnson ,  Russell Westerman

发明人： Jason Plumhoff ,  Sunil Srinivasan ,  David Johnson ,  Russell Westerman

IPC分类号： G01R31/00

CPC分类号： C23F4/00 ,  G03F1/54 ,  G03F1/80

摘要： The present invention provides a method for improving the critical dimension performance during a plasma etching process of a photolithographic substrate having a thin film. A passivation film is deposited onto the photolithographic substrate using a first set of process conditions. The deposited film is etched from the photolithographic substrate using a second set of process conditions. An exposed surface of the photolithographic substrate is etched using a third set of process conditions. During the plasma processing of the photolithographic substrate, the critical dimension performance of the photolithographic substrate is monitored to insure that the target uniformity and feature widths are obtained by adjusting the deposition and etch plasma processing of the photolithographic substrate.

摘要翻译： 本发明提供了一种在具有薄膜的光刻基片的等离子体蚀刻工艺中提高临界尺寸性能的方法。 使用第一组工艺条件将钝化膜沉积在光刻基板上。 使用第二组工艺条件从光刻基板蚀刻沉积的膜。 使用第三组工艺条件蚀刻光刻基片的暴露表面。 在光刻基板的等离子体处理期间，监测光刻基板的临界尺寸性能，以确保通过调整光刻基板的沉积和蚀刻等离子体处理来获得目标均匀性和特征宽度。

公开(公告)号：US08187483B2

公开(公告)日：2012-05-29

申请号：US11834299

申请日：2007-08-06

申请人： Jason Plumhoff ,  Sunil Srinivasan ,  David Johnson ,  Russell Westerman

发明人： Jason Plumhoff ,  Sunil Srinivasan ,  David Johnson ,  Russell Westerman

IPC分类号： G01L21/00 ,  H01L21/00

CPC分类号： C23F4/00 ,  G03F1/54 ,  G03F1/80

摘要： The present invention provides a method for improving the critical dimension performance during a plasma etching process of a photolithographic substrate having a thin film. A passivation film is deposited onto the photolithographic substrate using a first set of process conditions. The deposited film is etched from the photolithographic substrate using a second set of process conditions. An exposed surface of the photolithographic substrate is etched using a third set of process conditions. During the plasma processing of the photolithographic substrate, the critical dimension performance of the photolithographic substrate is monitored to insure that the target uniformity and feature widths are obtained by adjusting the deposition and etch plasma processing of the photolithographic substrate.

摘要翻译： 本发明提供了一种在具有薄膜的光刻基片的等离子体蚀刻工艺中提高临界尺寸性能的方法。 使用第一组工艺条件将钝化膜沉积在光刻基板上。 使用第二组工艺条件从光刻基板蚀刻沉积的膜。 使用第三组工艺条件蚀刻光刻基片的暴露表面。 在光刻基板的等离子体处理期间，监测光刻基板的临界尺寸性能，以确保通过调整光刻基板的沉积和蚀刻等离子体处理来获得目标均匀性和特征宽度。

公开(公告)号：US07008877B2

公开(公告)日：2006-03-07

申请号：US10839809

申请日：2004-05-03

申请人： Christopher Constantine ,  Jason Plumhoff ,  Russell Westerman ,  David J. Johnson

发明人： Christopher Constantine ,  Jason Plumhoff ,  Russell Westerman ,  David J. Johnson

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： G03F1/80 ,  C23F4/00 ,  H01J37/321

摘要： The present invention provides a method and an apparatus for etching a photolithographic substrate. The photolithographic substrate is placed on a support member in a vacuum chamber. A processing gas for etching a material from the photolithographic substrate is introduced into the vacuum chamber, and a plasma is generated. An RF bias is supplied to the support member in the vacuum chamber through an RF bias frequency generator at or below the ion transit frequency. Exposed material is etched from the photolithographic substrate with improved CD Etch Linearity and CD Etch Bias since the low frequency bias allows the developed charge on the photolithographic substrate, generated by the plasma, to dissipate.

摘要翻译： 本发明提供一种蚀刻光刻基片的方法和装置。 将光刻基板放置在真空室中的支撑构件上。 将用于从光刻基板蚀刻材料的处理气体引入真空室中，并产生等离子体。 通过在离子转移频率处或低于离子转移频率的RF偏置频率发生器将RF偏压提供给真空室中的支撑构件。 通过改进的CD蚀刻线性和CD蚀刻偏压从光刻基板蚀刻暴露的材料，因为低频偏压允许由等离子体产生的光刻基板上的显影电荷消散。

公开(公告)号：US07713432B2

公开(公告)日：2010-05-11

申请号：US11229319

申请日：2005-09-16

申请人： David Johnson ,  Russell Westerman

发明人： David Johnson ,  Russell Westerman

IPC分类号： C03C15/00

CPC分类号： H01J37/321 ,  H01J37/32623 ,  H01J37/32935 ,  H01J37/3299

摘要： The present invention provides a method and an apparatus for improving the etch uniformity across a substrate during a plasma etch process that employs the use of an inductively coupled plasma helical inductor. The plasma apparatus comprising a vacuum chamber, a support member in the vacuum chamber for holding the substrate, an etchant gas supply for providing an etchant gas to the vacuum chamber, an exhaust in fluid communication with the vacuum chamber, an RF power source and a helical inductor disposed around or near a portion of the vacuum chamber. A sensor is provided for measuring a process attribute to generate a signal to a controller that then controls a mechanism that varies the position of the helical inductor so that the uniformity of the plasma etch is improved.

摘要翻译： 本发明提供了一种用于在使用电感耦合等离子体螺旋电感器的等离子体蚀刻工艺期间改善衬底上的蚀刻均匀性的方法和装置。 等离子体装置包括真空室，用于保持基板的真空室中的支撑构件，用于向真空室提供蚀刻剂气体的蚀刻剂气体供应源，与真空室流体连通的排气，RF电源和 设置在真空室的一部分周围或附近的螺旋电感器。 提供了用于测量处理属性以产生信号给控制器的传感器，该控制器然后控制改变螺旋电感器位置的机构，从而提高等离子体蚀刻的均匀性。

公开(公告)号：US20050263485A1

公开(公告)日：2005-12-01

申请号：US11155904

申请日：2005-06-20

申请人： David Johnson ,  Russell Westerman ,  Mike Teixeira ,  Shouliang Lai

发明人： David Johnson ,  Russell Westerman ,  Mike Teixeira ,  Shouliang Lai

IPC分类号： G05D16/20 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/302 ,  G01R31/00

CPC分类号： G05D16/2013 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32935 ,  H01L21/67253 ,  Y10T137/2544

摘要： The present invention provides a method for controlling pressure in a chamber during a time division multiplexed process. A throttle valve is positioned based on an open-loop pressure control algorithm within at least one step of the time division multiplexed etch process. A pressure response of the step is evaluated and compared to a desired pressure response. The throttle valve is then positioned through a proportional, integral and derivative controller step to step of the time division multiplexed etch process based on the evaluation to the desired pressure response.

摘要翻译： 本发明提供一种在时分多路复用过程中控制室内的压力的方法。 在时分复用蚀刻工艺的至少一个步骤中，基于开环压力控制算法定位节流阀。 评估该步骤的压力响应并将其与期望的压力响应进行比较。 然后基于对期望的压力响应的评估，节流阀通过比例积分和微分控制器定位到步进到时分复用蚀刻工艺。

公开(公告)号：US07959819B2

公开(公告)日：2011-06-14

申请号：US11159415

申请日：2005-06-23

申请人： Shouliang Lai ,  David Johnson ,  Russell Westerman

发明人： Shouliang Lai ,  David Johnson ,  Russell Westerman

IPC分类号： G01L21/30 ,  G01R31/00

CPC分类号： H01L21/67253 ,  H01L21/30655 ,  H01L22/20

摘要： The present invention provides a method and an apparatus for reducing aspect ratio dependent etching that is observed when plasma etching deep trenches in a semiconductor substrate through an alternating deposition/etch process. A plurality of different sized features on the substrate are monitored in real time during the alternating deposition/etch process. Then, based on the information received from the monitor, at least one process parameter is adjusted in the alternating deposition/etch process to achieve equivalent etch depths of at least two different sized features on the substrate.

摘要翻译： 本发明提供了一种用于减小当通过交替沉积/蚀刻工艺等离子体蚀刻半导体衬底中的深沟槽时观察到的纵横比相关蚀刻的方法和装置。 在交替的沉积/蚀刻工艺期间实时地监测衬底上的多个不同尺寸的特征。 然后，基于从监视器接收的信息，在交替沉积/蚀刻工艺中调整至少一个工艺参数，以实现衬底上至少两个不同尺寸特征的等效蚀刻深度。

公开(公告)号：US06982175B2

公开(公告)日：2006-01-03

申请号：US10770839

申请日：2004-02-02

申请人： David Johnson ,  Russell Westerman

发明人： David Johnson ,  Russell Westerman

IPC分类号： H01L21/302

CPC分类号： H01J37/32963 ,  H01J37/32935

摘要： An improved method for determining endpoint of a time division multiplexed process by monitoring an identified region of a spectral emission of the process at a characteristic process frequency. The region is identified based upon the expected emission spectra of materials used during the time division multiplexed process. The characteristic process frequency is determined based upon the duration of the steps in the time division multiplexed process. Changes in the magnitude of the monitored spectra indicate the endpoint of processes in the time division multiplexed process and transitions between layers of materials.

摘要翻译： 一种用于通过以特征处理频率监视所述过程的频谱发射的识别区域来确定时分复用过程的端点的改进方法。 该区域基于在时分复用过程中使用的材料的预期发射光谱来识别。 基于时分复用处理中的步骤的持续时间来确定特征处理频率。 监测光谱幅度的变化表明时分复用过程中的过程的终点和材料层之间的转换。

公开(公告)号：US06924235B2

公开(公告)日：2005-08-02

申请号：US10640469

申请日：2003-08-12

申请人： David Johnson ,  Russell Westerman ,  Shouliang Lai

发明人： David Johnson ,  Russell Westerman ,  Shouliang Lai

IPC分类号： B81C99/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302

CPC分类号： H01L21/67017 ,  H01J37/3244 ,  H01L21/67069

摘要： An improved method for introducing gases into an alternating plasma etching/deposition chamber is provided by the present invention. To minimize the introduction of pressure pulses into the alternating etching/deposition chamber when the deposition and etchant gas supplies are switched on and off, a mass flow controller is used to provide a relatively constant flow of gas. A gas bypass or a gas exhaust is provided such that when a gas inlet to the alternating etching/deposition chamber is closed an alternative path is provided for the flow of gas from the mass flow controller. The provision of a bypass or exhaust maintains the pressure of the gas received from the mass flow controller at a substantially constant level. The elimination or minimization of a pressure pulse of the gas helps increase the smoothness of the walls of high aspect ratio features etched in a silicon substrate in the alternating etching/deposition chamber.

摘要翻译： 通过本发明提供了将气体引入交替等离子体蚀刻/沉积室的改进方法。 为了最小化在沉积和蚀刻剂气体供应被打开和关闭时将压力脉冲引入到交替蚀刻/沉积室中，使用质量流量控制器来提供相对恒定的气体流。 提供气体旁路或气体排气，使得当交替蚀刻/沉积室的气体入口被关闭时，提供了用于来自质量流量控制器的气体流的替代路径。 旁路或排气管的设置将从质量流量控制器接收的气体的压力保持在基本恒定的水平。 消除或最小化气体的压力脉冲有助于增加在交替蚀刻/沉积室中在硅衬底中蚀刻的高纵横比特征的壁的平滑度。