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    Nitride semiconductor light emitting device and method of manufacturing the same
    4.
    发明授权
    Nitride semiconductor light emitting device and method of manufacturing the same 有权
    氮化物半导体发光器件及其制造方法

    公开(公告)号：US07807521B2

    公开(公告)日：2010-10-05

    申请号：US12016020

    申请日：2008-01-17

    申请人： Jae Hoon Lee ,  Jeong Tak Oh ,  Jin Sub Park

    发明人： Jae Hoon Lee ,  Jeong Tak Oh ,  Jin Sub Park

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  H01L33/14

    摘要： A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.

    摘要翻译： 公开了一种氮化物半导体发光器件及其制造方法。 氮化物半导体发光器件包括形成在衬底上的n型氮化物半导体层，形成在n型氮化物半导体层上的有源层，形成在有源层上的p型氮化物半导体层，形成的未掺杂的GaN层 在p型氮化物半导体层上，形成在未掺杂的GaN层上的AlGaN层，以在AlGaN层和未掺杂的GaN层之间的键合界面处形成二维电子气（2DEG）层，以及n侧电极 以及分别形成在相互连接的n型氮化物半导体层和AlGaN层上的p侧电极。 由于在p型氮化物半导体层上形成GaN / AlGaN的异质结结构，因此通过2DEG层的隧道效应，p型氮化物半导体层与p侧电极之间的接触电阻增强。

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    氮化物半导体发光器件及其制造方法

    公开(公告)号：US20080131988A1

    公开(公告)日：2008-06-05

    申请号：US12016020

    申请日：2008-01-17

    申请人： Jae Hoon Lee ,  Jeong Tak Oh ,  Jin Sub Park

    发明人： Jae Hoon Lee ,  Jeong Tak Oh ,  Jin Sub Park

    IPC分类号： H01L21/329

    CPC分类号： H01L33/32 ,  H01L33/14

    摘要： A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.

    摘要翻译： 公开了一种氮化物半导体发光器件及其制造方法。 氮化物半导体发光器件包括形成在衬底上的n型氮化物半导体层，形成在n型氮化物半导体层上的有源层，形成在有源层上的p型氮化物半导体层，形成的未掺杂的GaN层 在p型氮化物半导体层上，形成在未掺杂的GaN层上的AlGaN层，以在AlGaN层和未掺杂的GaN层之间的键合界面处形成二维电子气（2DEG）层，以及n侧电极 以及分别形成在相互连接的n型氮化物半导体层和AlGaN层上的p侧电极。 由于在p型氮化物半导体层上形成GaN / AlGaN的异质结结构，因此通过2DEG层的隧道效应，p型氮化物半导体层与p侧电极之间的接触电阻增强。

    Nitride semiconductor light emitting device
    6.
    发明授权
    Nitride semiconductor light emitting device 有权
    氮化物半导体发光器件

    公开(公告)号：US07331566B2

    公开(公告)日：2008-02-19

    申请号：US10998922

    申请日：2004-11-30

    申请人： Jae Hoon Lee ,  Jeong Tak Oh ,  Jin Sub Park

    发明人： Jae Hoon Lee ,  Jeong Tak Oh ,  Jin Sub Park

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  H01L33/14

    摘要： A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.

    摘要翻译： 公开了一种氮化物半导体发光器件及其制造方法。 氮化物半导体发光器件包括形成在衬底上的n型氮化物半导体层，形成在n型氮化物半导体层上的有源层，形成在有源层上的p型氮化物半导体层，形成的未掺杂的GaN层 在p型氮化物半导体层上，形成在未掺杂的GaN层上的AlGaN层，以在AlGaN层和未掺杂的GaN层之间的键合界面处形成二维电子气（2DEG）层，以及n侧电极 以及分别形成在相互连接的n型氮化物半导体层和AlGaN层上的p侧电极。 由于在p型氮化物半导体层上形成GaN / AlGaN的异质结结构，因此通过2DEG层的隧道效应，p型氮化物半导体层与p侧电极之间的接触电阻增强。

    Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof
    7.
    发明授权
    Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof 失效

    公开(公告)号：US07078256B2

    公开(公告)日：2006-07-18

    申请号：US10875321

    申请日：2004-06-25

    申请人： Yung Ho Ryu ,  Kee Jeong Yang ,  Bang Won Oh ,  Jin Sub Park ,  Young Hoon Kim

    发明人： Yung Ho Ryu ,  Kee Jeong Yang ,  Bang Won Oh ,  Jin Sub Park ,  Young Hoon Kim

    IPC分类号： H01L21/00

    CPC分类号： H01L33/007

    摘要： A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.

    Nitride semiconductor light emitting device
    8.
    发明申请
    Nitride semiconductor light emitting device 审中-公开
    氮化物半导体发光器件

    公开(公告)号：US20060192207A1

    公开(公告)日：2006-08-31

    申请号：US11247152

    申请日：2005-10-12

    申请人： Hyun Wook Shim ,  Jong Hak Won ,  Jin Sub Park ,  Joong Seo Kang ,  Hyun Jin Lee

    发明人： Hyun Wook Shim ,  Jong Hak Won ,  Jin Sub Park ,  Joong Seo Kang ,  Hyun Jin Lee

    IPC分类号： H01L33/00

    CPC分类号： H01L33/14 ,  H01L33/04 ,  H01L33/32

    摘要： Provided is a nitride semiconductor light emitting device having enhanced output power and resistance to electrostatic discharge. The light emitting device comprises an n-side contact layer formed on a substrate, a current diffusion layer formed on the n-side contact layer, an active layer formed on the current diffusion layer, and a p-type clad layer formed on the active layer. The current diffusion layer is formed by alternately stacking at least one first InAlGaN layer having a higher electron concentration than that of the n-side contact layer and at least one second InAlGaN layer having a lower electron concentration than that of the n-side contact layer.

    摘要翻译： 提供了具有增强的输出功率和耐静电放电的氮化物半导体发光器件。 发光器件包括形成在衬底上的n侧接触层，形成在n侧接触层上的电流扩散层，形成在电流扩散层上的有源层和形成在有源层上的p型覆盖层 层。 通过交替堆叠具有比n侧接触层的电子浓度高的至少一个第一InAlGaN层和比n侧接触层的电子浓度低的至少一个第二InAlGaN层形成电流扩散层 。