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公开(公告)号:US20070282323A1
公开(公告)日:2007-12-06
申请号:US11754551
申请日:2007-05-29
申请人: Jean Woloszko , Kenneth R. Stalder
发明人: Jean Woloszko , Kenneth R. Stalder
IPC分类号: A61B18/14
CPC分类号: A61B18/042 , A61B18/148 , A61B2018/00166 , A61B2018/00565 , A61B2018/00577 , A61B2018/1472 , A61B2218/002 , A61B2218/007
摘要: An electrosurgical system and method for treating hard and soft tissues in the body comprises a shaft, a distal end section, an active electrode associated with the distal end section, a first fluid supply adapted to deliver a first electrically conductive fluid to the target site, and a second fluid supply adapted to deliver a second electrically conductive fluid to the active electrode. The system is adapted to treat a wide variety of hard tissues such as, for example, bones, calcified structures, calcified deposits, teeth, plaque, kidney-stones, gall-stones and other types of tissue by generating plasma in the vicinity of the active electrode, and applying the plasma to the tissue or structures.
摘要翻译: 用于治疗身体中的硬组织和软组织的电外科系统和方法包括轴,远端部分,与远端部分相关联的活动电极,适于将第一导电流体输送到靶部位的第一流体供应, 以及适于将第二导电流体输送到所述有源电极的第二流体供应源。 该系统适于通过在附近生成血浆来治疗各种各样的硬组织,例如骨,钙化结构,钙化沉积物,牙齿,斑块,肾结石,胆结石和其他类型的组织 活性电极,并将等离子体施加到组织或结构上。
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公开(公告)号:US08444638B2
公开(公告)日:2013-05-21
申请号:US13344988
申请日:2012-01-06
申请人: Jean Woloszko , Kenneth R. Stalder
发明人: Jean Woloszko , Kenneth R. Stalder
IPC分类号: A61B18/14
CPC分类号: A61B18/042 , A61B18/148 , A61B2018/00166 , A61B2018/00565 , A61B2018/00577 , A61B2018/1472 , A61B2218/002 , A61B2218/007
摘要: An electrosurgical system and method for treating hard and soft tissues in the body comprises a shaft, a distal end section, an active electrode associated with the distal end section, a first fluid supply adapted to deliver a first electrically conductive fluid to the target site, and a second fluid supply adapted to deliver a second electrically conductive fluid to the active electrode. The system is adapted to treat a wide variety of hard tissues such as, for example, bones, calcified structures, calcified deposits, teeth, plaque, kidney-stones, gall-stones and other types of tissue by generating plasma in the vicinity of the active electrode, and applying the plasma to the tissue or structures.
摘要翻译: 用于治疗身体中的硬组织和软组织的电外科系统和方法包括轴,远端部分,与远端部分相关联的活动电极,适于将第一导电流体输送到靶部位的第一流体供应, 以及适于将第二导电流体输送到所述有源电极的第二流体供应源。 该系统适于通过在附近生成血浆来治疗各种各样的硬组织,例如骨,钙化结构,钙化沉积物,牙齿,斑块,肾结石,胆结石和其他类型的组织 活性电极,并将等离子体施加到组织或结构上。
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公开(公告)号:US20120109123A1
公开(公告)日:2012-05-03
申请号:US13344988
申请日:2012-01-06
申请人: Jean Woloszko , Kenneth R. Stalder
发明人: Jean Woloszko , Kenneth R. Stalder
IPC分类号: A61B18/14
CPC分类号: A61B18/042 , A61B18/148 , A61B2018/00166 , A61B2018/00565 , A61B2018/00577 , A61B2018/1472 , A61B2218/002 , A61B2218/007
摘要: An electrosurgical system and method for treating hard and soft tissues in the body comprises a shaft, a distal end section, an active electrode associated with the distal end section, a first fluid supply adapted to deliver a first electrically conductive fluid to the target site, and a second fluid supply adapted to deliver a second electrically conductive fluid to the active electrode. The system is adapted to treat a wide variety of hard tissues such as, for example, bones, calcified structures, calcified deposits, teeth, plaque, kidney-stones, gall-stones and other types of tissue by generating plasma in the vicinity of the active electrode, and applying the plasma to the tissue or structures.
摘要翻译: 用于治疗身体中的硬组织和软组织的电外科系统和方法包括轴,远端部分,与远端部分相关联的活动电极,适于将第一导电流体输送到靶部位的第一流体供应, 以及适于将第二导电流体输送到所述有源电极的第二流体供应源。 该系统适于通过在附近生成血浆来治疗各种各样的硬组织,例如骨,钙化结构,钙化沉积物,牙齿,斑块,肾结石,胆结石和其他类型的组织 活性电极,并将等离子体施加到组织或结构上。
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公开(公告)号:US20120083782A1
公开(公告)日:2012-04-05
申请号:US12897311
申请日:2010-10-04
IPC分类号: A61B18/14
CPC分类号: A61B18/1482 , A61B2018/00125 , A61B2018/00577 , A61B2018/1472
摘要: An electrosurgical apparatus includes an active electrode with a low-work function coating to improve ablation performance. Low-work function coatings include compounds of alkali metals and alkali earth metals. Additionally, the active electrode may include various micro-structures or asperities or nano-structures or asperities. An array of carbon nanotubes may be aligned and secured on the active electrode. A return electrode comprises a high-work function coating to suppress electrical discharge activity on the return electrode.
摘要翻译: 电外科设备包括具有低功能涂层的活性电极以改善消融性能。 低功能涂层包括碱金属和碱土金属的化合物。 另外,有源电极可以包括各种微结构或粗糙度或纳米结构或粗糙度。 碳纳米管阵列可以对准并固定在有源电极上。 返回电极包括用于抑制返回电极上的放电活动的高功函数涂层。
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公开(公告)号:US08114071B2
公开(公告)日:2012-02-14
申请号:US11754551
申请日:2007-05-29
申请人: Jean Woloszko , Kenneth R. Stalder
发明人: Jean Woloszko , Kenneth R. Stalder
IPC分类号: A61B18/14
CPC分类号: A61B18/042 , A61B18/148 , A61B2018/00166 , A61B2018/00565 , A61B2018/00577 , A61B2018/1472 , A61B2218/002 , A61B2218/007
摘要: An electrosurgical system and method for treating hard and soft tissues in the body comprises a shaft, a distal end section, an active electrode associated with the distal end section, a first fluid supply adapted to deliver a first electrically conductive fluid to the target site, and a second fluid supply adapted to deliver a second electrically conductive fluid to the active electrode. The system is adapted to treat a wide variety of hard tissues such as, for example, bones, calcified structures, calcified deposits, teeth, plaque, kidney-stones, gall-stones and other types of tissue by generating plasma in the vicinity of the active electrode, and applying the plasma to the tissue or structures.
摘要翻译: 用于治疗身体中的硬组织和软组织的电外科系统和方法包括轴,远端部分,与远端部分相关联的活动电极,适于将第一导电流体输送到靶部位的第一流体供应, 以及适于将第二导电流体输送到所述有源电极的第二流体供应源。 该系统适于通过在附近生成血浆来治疗各种各样的硬组织,例如骨,钙化结构,钙化沉积物,牙齿,斑块,肾结石,胆结石和其他类型的组织 活性电极,并将等离子体施加到组织或结构上。
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公开(公告)号:US4842683A
公开(公告)日:1989-06-27
申请号:US185215
申请日:1988-04-25
申请人: David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
发明人: David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
IPC分类号: H05H1/46 , B01J3/02 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065
CPC分类号: H01L21/67069 , H01J37/32431 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862
摘要: A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.
摘要翻译: 公开了一种磁场增强型单晶片等离子体蚀刻反应器。 反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面(壁和气体歧管)和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。 提升销和夹紧环通过单轴提升机构垂直移动,以从配合的外部机器人刀片接收晶片,将晶片夹紧到基座并将晶片返回到刀片。 电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面,用于保持晶片表面冷却,尽管施加到电极的高功率密度。 气体馈通装置将冷却气体施加到RF供电的电极,而不会破坏气体。 为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。 这些特征的组合提供了广泛的压力方案,高蚀刻速率,高通量单晶硅蚀刻器,其在高气体压力下提供均匀性,方向性和选择性,干净地操作并且并入现场自清洁能力。
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公开(公告)号:US5215619A
公开(公告)日:1993-06-01
申请号:US760848
申请日:1991-09-17
申请人: David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
发明人: David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
CPC分类号: H01L21/67069 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32862
摘要: A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.
摘要翻译: 公开了一种磁场增强型单晶片等离子体蚀刻反应器。 反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面(壁和气体歧管)和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。 提升销和夹紧环通过单轴提升机构垂直移动,以从协作的外部机器人刀片接收晶片,将晶片夹紧到基座并将晶片返回到刀片。 电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面,用于保持晶片表面冷却,尽管施加到电极的高功率密度。 气体馈通装置将冷却气体施加到RF供电的电极,而不会破坏气体。 为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。 这些特征的组合提供了广泛的压力方案,高蚀刻速率,高通量单晶硅蚀刻器,其在高气体压力下提供均匀性,方向性和选择性,干净地操作并且并入现场自清洁能力。
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