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20 条记录 (耗时 0.036 秒)

    Electronic device featuring thermoelectric power generation
    1.
    发明授权
    Electronic device featuring thermoelectric power generation 失效
    具有热电发电的电子装置

    公开(公告)号：US06288321B1

    公开(公告)日：2001-09-11

    申请号：US09014211

    申请日：1998-01-26

    申请人： Jean-Pierre Fleurial ,  N. Thomas Olson ,  Alexander Borshchevsky ,  Thierry Caillat ,  Elizabeth Kolawa ,  M. Amy Ryan ,  Wayne M. Philips

    发明人： Jean-Pierre Fleurial ,  N. Thomas Olson ,  Alexander Borshchevsky ,  Thierry Caillat ,  Elizabeth Kolawa ,  M. Amy Ryan ,  Wayne M. Philips

    IPC分类号： H01L3530

    CPC分类号： H01L35/16 ,  H01L35/30 ,  H01L35/32

    摘要： A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a Bi2Te3-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

    摘要翻译： 一种用于产生运行电子部件的电力的装置。 该装置包括与高温区域热接触设置的导热基板（例如由金刚石或另一高导热材料构成）。 在运行期间，热量从高温区域流入导热基板，热量流入发电机。 将热电材料（例如，Bi 2 Te 3基膜或其它热电材料）放置成与导热基板热接触。 低温区域位于热电材料的与高温区域相反的一侧。 热梯度产生电力并驱动电气部件。

    High mobility p-type transition metal tri-antimonide and related skutterudite compounds and alloys for power semiconducting devices
    4.
    发明授权
    High mobility p-type transition metal tri-antimonide and related skutterudite compounds and alloys for power semiconducting devices 失效
    高迁移率p型过渡金属三锑化物和相关方钴矿化合物和用于功率半导体器件的合金

    公开(公告)号：US5831286A

    公开(公告)日：1998-11-03

    申请号：US643914

    申请日：1996-05-07

    申请人： Jean-Pierre Fleurial ,  Thierry Caillat ,  Alexander Borshchevsky ,  Jan W. Vandersande

    发明人： Jean-Pierre Fleurial ,  Thierry Caillat ,  Alexander Borshchevsky ,  Jan W. Vandersande

    IPC分类号： H01L29/24 ,  H01L31/0256

    CPC分类号： H01L29/24

    摘要： Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb, P, and As, having the general formula TX, wherein X is Sb.sub.3, P.sub.3, or As.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced semiconductor properties results in semiconductor materials which may be used in the fabrication of power semiconductor devices to substantially improve the efficiency of the resulting semiconductor device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing.

    摘要翻译： 已经制备了第Ⅷ族（Co，Rh和Ir）的金属过渡金属（Co，Rh和Ir），其具有通式为Sb TX with with with with with with with with with with with with with with with with with with with with or or or or or 这些半导体合金的方钴矿型晶格结构及其增强的半导体特性产生可用于制造功率半导体器件的半导体材料，以显着提高所得半导体器件的效率。 具有期望的方钴矿型晶格结构的半导体合金可以通过使用垂直梯度冷冻技术，液相 - 固相烧结技术，低温粉末烧结和/或热压法，根据本发明制备。

    High performance P-type thermoelectric materials and methods of preparation
    5.
    发明授权
    High performance P-type thermoelectric materials and methods of preparation 失效
    高性能P型热电材料及其制备方法

    公开(公告)号：US06458319B1

    公开(公告)日：2002-10-01

    申请号：US08820019

    申请日：1997-03-18

    申请人： Thierry Caillat ,  Alexander Borshchevsky ,  Jean-Pierre Fleurial

    发明人： Thierry Caillat ,  Alexander Borshchevsky ,  Jean-Pierre Fleurial

    IPC分类号： C30B2910

    CPC分类号： H01L35/18 ,  B22F2998/10 ,  B22F2999/00 ,  C22C1/0491 ,  C22C12/00 ,  G01K7/04 ,  H01L35/16 ,  H01L35/34 ,  B22F1/0085 ,  B22F9/04 ,  B22F3/14

    摘要： The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4−xAxSb3−yBy wherein 0≦x≦4, A is a transition metal, B is a pnicogen, and 0≦y≦3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

    摘要翻译： 本发明体现在具有增强的热电性能的高性能p型热电材料和制备这种材料的方法中。 在本发明的一个方面，式Zn4-xAxSb3-yBy的p型半导体，其中0≤x≤4，A是过渡金属，B是pnicogen，并且形成0 <= y <= 3 在制造具有显着提高的操作特性和提高的效率的热电器件中。 制备本发明的p型Zn4Sb3和相关合金的两种方法包括晶体生长法和粉末冶金法。

    ELECTRICAL CONTACTS FOR SKUTTERUDITE THERMOELECTRIC MATERIALS
    6.
    发明申请
    ELECTRICAL CONTACTS FOR SKUTTERUDITE THERMOELECTRIC MATERIALS 审中-公开
    SKUTTERUDITE热电材料的电气接触

    公开(公告)号：US20120006376A1

    公开(公告)日：2012-01-12

    申请号：US13161156

    申请日：2011-06-15

    申请人： JEAN-PIERRE FLEURIAL ,  Thierry Caillat ,  Su Chih Chi

    发明人： JEAN-PIERRE FLEURIAL ,  Thierry Caillat ,  Su Chih Chi

    IPC分类号： H01L35/32 ,  H01L35/34 ,  H01L35/18

    CPC分类号： H01L35/08 ,  H01L35/18

    摘要： A thermally stable diffusion barrier for bonding skutterudite-based materials with metal contacts is disclosed. The diffusion barrier may be employed to inhibit solid-state diffusion between the metal contacts, e.g. titanium (Ti), nickel (Ni), copper (Cu), palladium (Pd) or other suitable metal electrical contacts, and a skutterudite thermoelectric material including a diffusible element, such as antimony (Sb), phosphorous (P) or arsenic (As), e.g. n-type CoSb3 or p-type CeFe4−xCoxSb12 where the diffusible element is Sb, to slow degradation of the mechanical and electrical characteristics of the device. The diffusion barrier may be employed to bond metal contacts to thermoelectric materials for various power generation applications operating at high temperatures (e.g. 673 K or above). Some exemplary diffusion barrier materials have been identified such as zirconium (Zr), hafnium (Hf), and yttrium (Y).

    摘要翻译： 公开了一种热稳定的扩散阻挡层，用于粘接具有金属触点的方钴矿基材料。 可以使用扩散阻挡层来抑制金属触点之间的固态扩散，例如， 钛（Ti），镍（Ni），铜（Cu），钯（Pd）或其它合适的金属电触点，以及包括可扩散元素如锑（Sb），磷（P）或砷 As），例如 n型CoSb3或p型CeFe4-xCoxSb12，其中可扩散元素为Sb，从而缓慢降低器件的机械和电气特性。 可以使用扩散阻挡层将金属触点接合到用于在高温（例如673K或更高）下操作的各种发电应用的热电材料。 已经鉴定了一些示例性的扩散阻挡材料，例如锆（Zr），铪（Hf）和钇（Y）。

    Method of suppressing sublimation in advanced thermoelectric devices
    8.
    发明授权
    Method of suppressing sublimation in advanced thermoelectric devices 失效
    抑制先进热电装置升华的方法

    公开(公告)号：US07480984B1

    公开(公告)日：2009-01-27

    申请号：US10863835

    申请日：2004-06-07

    申请人： Jeffrey S. Sakamoto ,  Thierry Caillat ,  Jean-Pierre Fleurial ,  G. Jeffrey Snyder

    发明人： Jeffrey S. Sakamoto ,  Thierry Caillat ,  Jean-Pierre Fleurial ,  G. Jeffrey Snyder

    IPC分类号： H05B3/00

    CPC分类号： H05B3/46 ,  H01L35/18 ,  H01L35/34 ,  Y10T29/49083 ,  Y10T29/49087 ,  Y10T29/49096 ,  Y10T29/49117

    摘要： A method of applying a physical barrier to suppress thermal decomposition near a surface of a thermoelectric material including applying a continuous metal foil to a predetermined portion of the surface of the thermoelectric material, physically binding the continuous metal foil to the surface of the thermoelectric material using a binding member, and heating in a predetermined atmosphere the applied and physically bound continuous metal foil and the thermoelectric material to a sufficient temperature in order to promote bonding between the continuous metal foil and the surface of the thermoelectric material. The continuous metal foil forms a physical barrier to enclose a predetermined portion of the surface. Thermal decomposition is suppressed at the surface of the thermoelectric material enclosed by the physical barrier when the thermoelectric element is in operation.

    摘要翻译： 一种施加物理屏障来抑制热电材料表面附近的热分解的方法，包括在热电材料的表面的预定部分上施加连续的金属箔，将连续的金属箔与热电材料的表面物理地结合在一起，使用 在预定的气氛中将所施加和物理结合的连续金属箔和热电材料加热到足够的温度，以促进连续金属箔与热电材料表面之间的结合。 连续金属箔形成物理屏障以封闭表面的预定部分。 当热电元件工作时，由物理屏障包围的热电材料的表面抑制热分解。

    Thermoelectric devices based on materials with filled skutterudite structures
    9.
    发明授权
    Thermoelectric devices based on materials with filled skutterudite structures 有权
    基于具有填充方钴矿结构的材料的热电装置

    公开(公告)号：US06660926B2

    公开(公告)日：2003-12-09

    申请号：US10007549

    申请日：2001-11-06

    申请人： Jean-Pierre Fleurial ,  Alex Borshchevsky ,  Thierry Caillat ,  Donald T. Morelli ,  Gregory P. Meisner

    发明人： Jean-Pierre Fleurial ,  Alex Borshchevsky ,  Thierry Caillat ,  Donald T. Morelli ,  Gregory P. Meisner

    IPC分类号： H01L3528

    CPC分类号： H01L35/32 ,  H01L35/18 ,  H01L35/22

    摘要： A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.

    摘要翻译： 一类基于方钴矿结构的热电化合物，在空的八分圆中具有重的填充原子，并且替代过渡金属和主族原子。 高塞贝克系数和低热导率结合在这些填充的方程中用于大ZT值的大电导率。 公开了替代和填充方法来合成具有所需热电性质的方钴矿组合物。 使用与粉末冶金技术相结合的熔融和/或烧结方法来制造这些新材料。