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公开(公告)号：US20150357541A1
公开(公告)日：2015-12-10
申请号：US13913233
申请日：2013-06-07
申请人： Samad A. Firdosy , Billy Chun-Yip Li , Vilupanur A. Ravi , Jean-Pierre Fleurial , Thierry Caillat , Harut Anjunyan
发明人： Samad A. Firdosy , Billy Chun-Yip Li , Vilupanur A. Ravi , Jean-Pierre Fleurial , Thierry Caillat , Harut Anjunyan
摘要： A thermoelectric power generation device is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.
摘要翻译： 公开了一种在热电材料界面处使用一个或多个机械柔性和导热和导电层的热电发电装置，以适应由此引起的高温差和应力。 顺应性材料可以是金属泡沫或金属石墨复合材料（例如使用镍），并且在采用Zintl热电材料的高温热电发电机中是特别有利的。 柔性材料可以设置在装置的热电段之间或热电段与装置的热侧或冷侧互连之间。
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公开(公告)号：US09722163B2
公开(公告)日：2017-08-01
申请号：US13913233
申请日：2013-06-07
申请人： Samad A. Firdosy , Billy Chun-Yip Li , Vilupanur A. Ravi , Jean-Pierre Fleurial , Thierry Caillat , Harut Anjunyan
发明人： Samad A. Firdosy , Billy Chun-Yip Li , Vilupanur A. Ravi , Jean-Pierre Fleurial , Thierry Caillat , Harut Anjunyan
摘要： A thermoelectric power generation device is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.
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3.发明申请公开(公告)号：US20170077379A1
公开(公告)日：2017-03-16
申请号：US15357988
申请日：2016-11-21
申请人： Samad A. Firdosy , Billy Chun-Yip Li , Vilupanur A. Ravi , Jean-Pierre Fleurial , Thierry Caillat , Harut Anjunyan
发明人： Samad A. Firdosy , Billy Chun-Yip Li , Vilupanur A. Ravi , Jean-Pierre Fleurial , Thierry Caillat , Harut Anjunyan
摘要： A thermoelectric power generation technique is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.
摘要翻译： 公开了一种热电发电技术，其在热电材料界面处使用一个或多个机械柔性和导热和导热层，以适应由此引起的高温差和应力。 顺应性材料可以是金属泡沫或金属石墨复合材料（例如使用镍），并且在采用Zintl热电材料的高温热电发电机中是特别有利的。 柔性材料可以设置在装置的热电段之间或热电段与装置的热侧或冷侧互连之间。
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公开(公告)号：US20100307551A1
公开(公告)日：2010-12-09
申请号：US12789198
申请日：2010-05-27
CPC分类号： H01L35/08 , Y10T156/10
摘要： The present invention relates to a high-temperature thermoelectric couple and the method for making the same. The method requires a very small number of fabrication steps. It includes an act of fabricating an n-type leg that, in a stacked configuration, includes a low electrical contact resistance metallization foil that is connected to each of the two sides of Lanthanum Telluride via a thin metallic adhesion layer. Additionally, a p-type leg is fabricated that, in a stacked configuration, includes a low electrical contact resistance metallization foil that is connected to each of the two sides of 14-1-11 Zintl. Finally, CTE-matched, low electrical and thermal resistance plate interconnects are used for each of the two legs to interface with the heat source and heat sink and form an electrical connection.
摘要翻译： 本发明涉及一种高温热电偶及其制造方法。 该方法需要非常少量的制造步骤。 它包括制造n型腿的动作，其堆叠结构包括通过薄金属粘合层连接到碲化镧两侧中的每一侧的低电接触电阻金属化箔。 此外，制造p型脚，其在堆叠构造中包括连接到14-1-11 Zintl的两侧中的每一侧的低电接触电阻金属化箔。 最后，CTE匹配的低电阻和热电阻板互连用于两个腿中的每一个以与热源和散热器接口并形成电连接。
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5.发明授权公开(公告)号：US06942728B2
公开(公告)日：2005-09-13
申请号：US10262807
申请日：2002-10-01
CPC分类号： H01L35/18 , B22F2998/10 , B22F2999/00 , C22C1/0491 , C22C12/00 , G01K7/04 , H01L35/16 , H01L35/34 , B22F1/0085 , B22F9/04 , B22F3/14
摘要： The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4−xAxSb3−yBy wherein 0≦x≦4, A is a transition metal, B is a pnicogen, and 0≦y≦3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.
摘要翻译： 本发明体现在具有增强的热电性能的高性能p型热电材料和制备这种材料的方法中。 在本发明的一个方面，式Zn 4-x A x Sb 3-y B y y的p型半导体， 其中0 <= x <= 4，A是过渡金属，B是pnicogen，并且形成0 <= y <= 3，用于制造具有显着增强的操作特性和提高效率的热电器件。 制备本发明的p型Zn 4 Sb 3 O 3和相关合金的两种方法包括晶体生长法和粉末冶金法。
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公开(公告)号：US06563039B2
公开(公告)日：2003-05-13
申请号：US09765062
申请日：2001-01-17
申请人： Thierry Caillat , Jean-Pierre Fleurial , Alexander Borshchevsky , G. Jeffrey Snyder , Andrew Zoltan , Leslie Zoltan
发明人： Thierry Caillat , Jean-Pierre Fleurial , Alexander Borshchevsky , G. Jeffrey Snyder , Andrew Zoltan , Leslie Zoltan
IPC分类号： H01L3528
摘要： A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalized certain aspects of the different segments. Different materials are also described.
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7.发明授权High mobility p-type transition metal tri-antimonide and related skutterudite compounds and alloys for power semiconducting devices 失效高迁移率p型过渡金属三锑化物和相关方钴矿化合物和用于功率半导体器件的合金
公开(公告)号：US5831286A
公开(公告)日：1998-11-03
申请号：US643914
申请日：1996-05-07
IPC分类号： H01L29/24 , H01L31/0256
CPC分类号： H01L29/24
摘要： Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb, P, and As, having the general formula TX, wherein X is Sb.sub.3, P.sub.3, or As.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced semiconductor properties results in semiconductor materials which may be used in the fabrication of power semiconductor devices to substantially improve the efficiency of the resulting semiconductor device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing.
摘要翻译： 已经制备了第Ⅷ族（Co，Rh和Ir）的金属过渡金属（Co，Rh和Ir），其具有通式为Sb TX with with with with with with with with with with with with with with with with with with with with or or or or or 这些半导体合金的方钴矿型晶格结构及其增强的半导体特性产生可用于制造功率半导体器件的半导体材料，以显着提高所得半导体器件的效率。 具有期望的方钴矿型晶格结构的半导体合金可以通过使用垂直梯度冷冻技术，液相 - 固相烧结技术，低温粉末烧结和/或热压法，根据本发明制备。
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公开(公告)号：US07480984B1
公开(公告)日：2009-01-27
申请号：US10863835
申请日：2004-06-07
IPC分类号： H05B3/00
CPC分类号： H05B3/46 , H01L35/18 , H01L35/34 , Y10T29/49083 , Y10T29/49087 , Y10T29/49096 , Y10T29/49117
摘要： A method of applying a physical barrier to suppress thermal decomposition near a surface of a thermoelectric material including applying a continuous metal foil to a predetermined portion of the surface of the thermoelectric material, physically binding the continuous metal foil to the surface of the thermoelectric material using a binding member, and heating in a predetermined atmosphere the applied and physically bound continuous metal foil and the thermoelectric material to a sufficient temperature in order to promote bonding between the continuous metal foil and the surface of the thermoelectric material. The continuous metal foil forms a physical barrier to enclose a predetermined portion of the surface. Thermal decomposition is suppressed at the surface of the thermoelectric material enclosed by the physical barrier when the thermoelectric element is in operation.
摘要翻译： 一种施加物理屏障来抑制热电材料表面附近的热分解的方法，包括在热电材料的表面的预定部分上施加连续的金属箔，将连续的金属箔与热电材料的表面物理地结合在一起，使用 在预定的气氛中将所施加和物理结合的连续金属箔和热电材料加热到足够的温度，以促进连续金属箔与热电材料表面之间的结合。 连续金属箔形成物理屏障以封闭表面的预定部分。 当热电元件工作时，由物理屏障包围的热电材料的表面抑制热分解。
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9.发明授权Thermoelectric devices based on materials with filled skutterudite structures 有权基于具有填充方钴矿结构的材料的热电装置公开(公告)号：US06660926B2
公开(公告)日：2003-12-09
申请号：US10007549
申请日：2001-11-06
申请人： Jean-Pierre Fleurial , Alex Borshchevsky , Thierry Caillat , Donald T. Morelli , Gregory P. Meisner
发明人： Jean-Pierre Fleurial , Alex Borshchevsky , Thierry Caillat , Donald T. Morelli , Gregory P. Meisner
IPC分类号： H01L3528
摘要： A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.
摘要翻译： 一类基于方钴矿结构的热电化合物，在空的八分圆中具有重的填充原子，并且替代过渡金属和主族原子。 高塞贝克系数和低热导率结合在这些填充的方程中用于大ZT值的大电导率。 公开了替代和填充方法来合成具有所需热电性质的方钴矿组合物。 使用与粉末冶金技术相结合的熔融和/或烧结方法来制造这些新材料。
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公开(公告)号：US06288321B1
公开(公告)日：2001-09-11
申请号：US09014211
申请日：1998-01-26
申请人： Jean-Pierre Fleurial , N. Thomas Olson , Alexander Borshchevsky , Thierry Caillat , Elizabeth Kolawa , M. Amy Ryan , Wayne M. Philips
发明人： Jean-Pierre Fleurial , N. Thomas Olson , Alexander Borshchevsky , Thierry Caillat , Elizabeth Kolawa , M. Amy Ryan , Wayne M. Philips
IPC分类号： H01L3530
摘要： A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a Bi2Te3-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.
摘要翻译： 一种用于产生运行电子部件的电力的装置。 该装置包括与高温区域热接触设置的导热基板（例如由金刚石或另一高导热材料构成）。 在运行期间，热量从高温区域流入导热基板，热量流入发电机。 将热电材料（例如，Bi 2 Te 3基膜或其它热电材料）放置成与导热基板热接触。 低温区域位于热电材料的与高温区域相反的一侧。 热梯度产生电力并驱动电气部件。
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