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公开(公告)号：US07398485B2
公开(公告)日：2008-07-08
申请号：US11279262
申请日：2006-04-11
IPC分类号： G06F17/50
CPC分类号： G06F17/5077
摘要： Embodiments herein provide a method and computer program product for optimizing router settings to increase IC yield. A method begins by reviewing yield data in an IC manufacturing line to identify structure-specific mechanisms that impact IC yield. Next, the method establishes a structural identifier for each structure-specific mechanism, wherein the structural identifiers include wire codes, tags, and/or unique identifiers. Different structural identifiers are established for wires having different widths. Furthermore, the method establishes a weighting factor for each structure-specific mechanism, wherein higher weighting factors are established for structure-specific mechanisms comprising thick wires proximate to multiple thick wires. The method establishes the structural identifiers and the weighting factors for incidence of spacing between single wide lines, double wide lines, and triple wide lines and for incidence of wires above large metal lands. Subsequently, the router settings are modified based on the structural identifiers and the weighting factors to minimize systematic defects.
摘要翻译： 本文的实施例提供了一种用于优化路由器设置以增加IC产量的方法和计算机程序产品。 一种方法开始于检查IC生产线中的产量数据，以确定影响IC产量的结构特异性机制。 接下来，该方法为每个结构特定机制建立结构标识符，其中结构标识符包括有线代码，标签和/或唯一标识符。 针对具有不同宽度的电线建立了不同的结构标识符。 此外，该方法为每个结构特定机构建立加权因子，其中针对包括靠近多个粗线的粗线的结构特定机构建立较高的加权因子。 该方法建立了单宽线，双宽线和三宽线之间的间距发生的结构标识符和加权因子，以及大金属土地上电线的入射。 随后，路由器设置基于结构标识符和权重因子进行修改，以最大限度地减少系统缺陷。
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2.发明授权公开(公告)号：US08234594B2
公开(公告)日：2012-07-31
申请号：US11552225
申请日：2006-10-24
申请人： Brent A. Anderson , Jeanne P. Bickford , Markus Buehler , Jason D. Hibbeler , Juergen Koehl , Edward J. Nowak
发明人： Brent A. Anderson , Jeanne P. Bickford , Markus Buehler , Jason D. Hibbeler , Juergen Koehl , Edward J. Nowak
CPC分类号： H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located at a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is approximately axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is approximately axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.
摘要翻译： 一种集成电路，包括第一级布线轨道的第一线，第二级布线轨道的第二线，第三级布线轨道的第三线和位于距离第二线的第一距离的第四线 在第二级线路上。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线，第二通孔大致轴向对准第一通孔。 第三通过在第四线的第二位置连接第三和第四导线。 在第二位置连接第一和第四导线的第四通孔，第四通孔与第三通孔大致轴向对齐。 第二，第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径，该路径对于第一通孔是冗余的。
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3.发明授权Design structure for a redundant micro-loop structure for use in an integrated circuit physical design process and method of forming the same 有权用于集成电路物理设计过程中使用的冗余微环结构的设计结构及其形成方法公开(公告)号：US07984394B2
公开(公告)日：2011-07-19
申请号：US11955580
申请日：2007-12-13
申请人： Brent A. Anderson , Jeanne P. Bickford , Markus Buehler , Jason D. Hibbeler , Juergen Koehl , Edward J. Nowak
发明人： Brent A. Anderson , Jeanne P. Bickford , Markus Buehler , Jason D. Hibbeler , Juergen Koehl , Edward J. Nowak
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A design structure for an integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.
摘要翻译： 一种用于集成电路的设计结构，该集成电路包括第一级布线轨道的第一线，第二级布线轨道的第二线，第三级布线轨道的第三线，以及位于第一距离处的第四线 第二根电线在第二级线路上。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线，第二通孔基本上与第一通孔轴向对准。 第三通过在第四线的第二位置连接第三和第四导线。 第四通孔在第二位置处连接第一和第四导线，第四通孔基本上与第三通孔轴向对准。 第二，第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径，该路径对于第一通孔是冗余的。
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4.发明申请METHOD FOR COMPUTING THE SENSITIVITY OF A VLSI DESIGN TO BOTH RANDOM AND SYSTEMATIC DEFECTS USING A CRITICAL AREA ANALYSIS TOOL 失效使用关键区域分析工具计算VLSI设计对两个随机和系统缺陷的灵敏度的方法公开(公告)号：US20120137262A1
公开(公告)日：2012-05-31
申请号：US13368413
申请日：2012-02-08
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： A method of estimating integrated circuit yield comprises providing an integrated circuit layout and a set of systematic defects based on a manufacturing process. Next, the method represents a systematic defect by modifying structures in the integrated circuit layout to create modified structures. More specifically, for short-circuit-causing defects, the method pre-expands the structures when the structures comprise a higher systematic defect sensitivity level, and pre-shrinks the structures when the structures comprise a lower systematic defect sensitivity level. Following this, a critical area analysis is performed on the integrated circuit layout using the modified structures, wherein dot-throwing, geometric expansion, or Voronoi diagrams are used. The method then computes a fault density value, random defects and systematic defects are computed. The fault density value is subsequently compared to a predetermined value, wherein the predetermined value is determined using test structures and/or yield data from a target manufacturing process.
摘要翻译： 估计集成电路产量的方法包括基于制造过程提供集成电路布局和一组系统缺陷。 接下来，该方法通过修改集成电路布局中的结构以产生修改的结构来表示系统缺陷。 更具体地，对于短路导致的缺陷，当结构包括较高的系统缺陷灵敏度水平时，该方法预扩展结构，并且当结构包括较低的系统缺陷灵敏度水平时，预结构。 接下来，使用改进的结构对集成电路布局进行关键区域分析，其中使用点投掷，几何展开或Voronoi图。 然后，该方法计算故障密度值，计算随机缺陷和系统缺陷。 随后将故障密度值与预定值进行比较，其中使用来自目标制造过程的测试结构和/或屈服数据确定预定值。
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5.发明申请公开(公告)号：US20090158231A1
公开(公告)日：2009-06-18
申请号：US11955580
申请日：2007-12-13
申请人： Brent A. Anderson , Jeanne P. Bickford , Markus Buehler , Jason D. Hibbeler , Juergen Koehl , Edward J. Nowak
发明人： Brent A. Anderson , Jeanne P. Bickford , Markus Buehler , Jason D. Hibbeler , Juergen Koehl , Edward J. Nowak
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A design structure for an integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.
摘要翻译： 一种用于集成电路的设计结构，该集成电路包括第一级布线轨道的第一线，第二级布线轨道的第二线，第三级布线轨道的第三线，以及位于第一距离处的第四线 第二根电线在第二级线路上。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线，第二通孔基本上与第一通孔轴向对准。 第三通过在第四线的第二位置连接第三和第四导线。 第四通孔在第二位置处连接第一和第四导线，第四通孔基本上与第三通孔轴向对准。 第二，第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径，该路径对于第一通孔是冗余的。
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6.发明申请公开(公告)号：US20100211923A9
公开(公告)日：2010-08-19
申请号：US11955580
申请日：2007-12-13
申请人： Brent A. Anderson , Jeanne P. Bickford , Markus Buehler , Jason D. Hibbeler , Juergen Koehl , Edward J. Nowak
发明人： Brent A. Anderson , Jeanne P. Bickford , Markus Buehler , Jason D. Hibbeler , Juergen Koehl , Edward J. Nowak
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A design structure for an integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.
摘要翻译： 一种用于集成电路的设计结构，该集成电路包括第一级布线轨道的第一线，第二级布线轨道的第二线，第三级布线轨道的第三线，以及位于第一距离处的第四线 第二根电线在第二级线路上。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线，第二通孔基本上与第一通孔轴向对准。 第三通过在第四线的第二位置连接第三和第四导线。 第四通孔在第二位置处连接第一和第四导线，第四通孔基本上与第三通孔轴向对准。 第二，第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径，该路径对于第一通孔是冗余的。
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7.发明授权Method for computing the sensitivity of a VLSI design to both random and systematic defects using a critical area analysis tool 失效使用关键区域分析工具计算VLSI设计对随机和系统缺陷的敏感度的方法公开(公告)号：US07487476B2
公开(公告)日：2009-02-03
申请号：US11279300
申请日：2006-04-11
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： A method of estimating integrated circuit yield comprises providing an integrated circuit layout and a set of systematic defects based on a manufacturing process. Next, the method represents a systematic defect by modifying structures in the integrated circuit layout to create modified structures. More specifically, for short-circuit-causing defects, the method pre-expands the structures when the structures comprise a higher systematic defect sensitivity level, and pre-shrinks the structures when the structures comprise a lower systematic defect sensitivity level. Following this, a critical area analysis is performed on the integrated circuit layout using the modified structures, wherein dot-throwing, geometric expansion, or Voronoi diagrams are used. The method then computes a fault density value, random defects and systematic defects are computed. The fault density value is subsequently compared to a predetermined value, wherein the predetermined value is determined using test structures and/or yield data from a target manufacturing process.
摘要翻译： 估计集成电路产量的方法包括基于制造过程提供集成电路布局和一组系统缺陷。 接下来，该方法通过修改集成电路布局中的结构以产生修改的结构来表示系统缺陷。 更具体地，对于短路导致的缺陷，当结构包括较高的系统缺陷灵敏度水平时，该方法预扩展结构，并且当结构包括较低的系统缺陷灵敏度水平时预结构。 接下来，使用改进的结构对集成电路布局进行关键区域分析，其中使用点投掷，几何展开或Voronoi图。 然后，该方法计算故障密度值，计算随机缺陷和系统缺陷。 随后将故障密度值与预定值进行比较，其中使用来自目标制造过程的测试结构和/或屈服数据确定预定值。
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8.发明申请公开(公告)号：US20080097738A1
公开(公告)日：2008-04-24
申请号：US11552225
申请日：2006-10-24
申请人： Brent A. Anderson , Jeanne P. Bickford , Markus Buehler , Jason D. Hibbeler , Juergen Koehl , Edward J. Nowak
发明人： Brent A. Anderson , Jeanne P. Bickford , Markus Buehler , Jason D. Hibbeler , Juergen Koehl , Edward J. Nowak
IPC分类号： G06F17/50
CPC分类号： H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.
摘要翻译： 一种集成电路，包括第一级布线轨道的第一线，第二级布线轨道的第二线，第三级布线轨道的第三线和与第二线的第一距离的第四线 第二层线路。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线，第二通孔基本上与第一通孔轴向对准。 第三通过在第四线的第二位置连接第三和第四导线。 第四通孔在第二位置处连接第一和第四导线，第四通孔基本上与第三通孔轴向对准。 第二，第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径，该路径对于第一通孔是冗余的。
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9.发明授权Method for computing the sensitivity of a VLSI design to both random and systematic defects using a critical area analysis tool 有权使用关键区域分析工具计算VLSI设计对随机和系统缺陷的敏感度的方法公开(公告)号：US08132129B2
公开(公告)日：2012-03-06
申请号：US12348070
申请日：2009-01-02
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： A method of estimating integrated circuit yield comprises providing an integrated circuit layout and a set of systematic defects based on a manufacturing process. Next, the method represents a systematic defect by modifying structures in the integrated circuit layout to create modified structures. More specifically, for short-circuit-causing defects, the method pre-expands the structures when the structures comprise a higher systematic defect sensitivity level, and pre-shrinks the structures when the structures comprise a lower systematic defect sensitivity level. Following this, a critical area analysis is performed on the integrated circuit layout using the modified structures, wherein dot-throwing, geometric expansion, or Voronoi diagrams are used. The method then computes a fault density value, random defects and systematic defects are computed. The fault density value is subsequently compared to a predetermined value, wherein the predetermined value is determined using test structures and/or yield data from a target manufacturing process.
摘要翻译： 估计集成电路产量的方法包括基于制造过程提供集成电路布局和一组系统缺陷。 接下来，该方法通过修改集成电路布局中的结构以产生修改的结构来表示系统缺陷。 更具体地，对于短路导致的缺陷，当结构包括较高的系统缺陷灵敏度水平时，该方法预先扩展结构，并且当结构包括较低的系统缺陷灵敏度水平时预结构。 接下来，使用改进的结构对集成电路布局进行关键区域分析，其中使用点投掷，几何展开或Voronoi图。 然后，该方法计算故障密度值，计算随机缺陷和系统缺陷。 随后将故障密度值与预定值进行比较，其中使用来自目标制造过程的测试结构和/或屈服数据确定预定值。
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公开(公告)号：US08418090B2
公开(公告)日：2013-04-09
申请号：US13368413
申请日：2012-02-08
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： A method of estimating integrated circuit yield comprises providing an integrated circuit layout and a set of systematic defects based on a manufacturing process. Next, the method represents a systematic defect by modifying structures in the integrated circuit layout to create modified structures. More specifically, for short-circuit-causing defects, the method pre-expands the structures when the structures comprise a higher systematic defect sensitivity level, and pre-shrinks the structures when the structures comprise a lower systematic defect sensitivity level. Following this, a critical area analysis is performed on the integrated circuit layout using the modified structures, wherein dot-throwing, geometric expansion, or Voronoi diagrams are used. The method then computes a fault density value, random defects and systematic defects are computed. The fault density value is subsequently compared to a predetermined value, wherein the predetermined value is determined using test structures and/or yield data from a target manufacturing process.
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