公开(公告)号：US4507160A

公开(公告)日：1985-03-26

申请号：US564871

申请日：1983-12-23

申请人： Jeffrey D. Beck ,  Herbert F. Schaake ,  John H. Tregilgas ,  Michael A. Kinch

发明人： Jeffrey D. Beck ,  Herbert F. Schaake ,  John H. Tregilgas ,  Michael A. Kinch

IPC分类号： H01L21/385 ,  H01L21/477 ,  H01L21/324

CPC分类号： H01L21/385 ,  H01L21/477

摘要： The disclosure relates to a method for reducing impurity concentration in mercury cadmium telluride alloys wherein impurities are attracted to a region saturated with second phase tellurium during annealing in a saturated mercury atmosphere where the second phase tellurium and the impurities attracted thereto can be removed by polishing, etching, grinding, or the like.

摘要翻译： 本公开涉及一种降低汞镉碲合金中的杂质浓度的方法，其中在饱和汞气氛中退火期间，杂质被吸引到饱和第二相碲的区域，其中第二相碲及其吸附的杂质可通过抛光除去， 蚀刻，研磨等。

公开(公告)号：US4501625A

公开(公告)日：1985-02-26

申请号：US564953

申请日：1983-12-23

申请人： John H. Tregilgas ,  Jeffrey D. Beck ,  Michael A. Kinch ,  Herbert F. Schaake

发明人： John H. Tregilgas ,  Jeffrey D. Beck ,  Michael A. Kinch ,  Herbert F. Schaake

IPC分类号： C30B33/00 ,  H01L21/324

CPC分类号： C30B33/00 ,  C30B29/48

摘要： The disclosure relates to a method for making extrinsically doped HgCdTe alloys containing Cu, Ag, or Au or other dopant impurity whereby the excess tellurium in the core is annihilated (stoichiometrically compensated by excess in-diffusing Hg) and the dopant impurities are then permitted to randomly move through the slab to provide for homogeneity thereof. A post-annealing step of much greater than normal temperature-time length than was provided in the prior art is used. A standard post-annealing step in a saturated mercury vapor atomosphere leaves second phase tellurium (and gettered impurities) at the center of the slab, and longer term post-annealing negates this situation by annihilating the second phase tellurium in the slab and thus permitting the impurities to randomly travel by solid state diffusion throughout the slab to ultimately be distributed therein in a homogeneous manner. The additional time required for the post-annealing step following the normal prior art post-annealing step varies based upon slice or slab thickness, the metal-Te stoichiometry, and second post-annealing step temperature and, in general, will be longer but in the same range as that used in the prior post-annealing stage. Following annihilation of the second phase tellurium from the core, the impurity is homogenized in the slab by further annealing for from about one hour to about 20 weeks at a temperature under 300.degree. C., preferably 280.degree. C., by solid state diffusion.

摘要翻译： 本公开内容涉及一种制备含Cu，Ag或Au或其他掺杂杂质的二次掺杂HgCdTe合金的方法，其中芯中的过量碲被消除（化学计量地通过过量扩散Hg补偿），然后允许掺杂剂杂质 随机移动通过平板以提供其均匀性。 使用比常规温度 - 时间长度远大于现有技术中提供的后退火步骤。 在饱和汞蒸汽大气层中的标准后退火步骤在板坯的中心留下第二相碲（和杂质），并且较长期的后退火通过湮灭板坯中的第二相碲来抵消这种情况，从而允许 通过整个板坯的固态扩散随机行进的杂质最终以均匀的方式分布在其中。 在常规现有技术的后退火步骤之后的后退火步骤所需的额外时间基于切片或板厚度，金属-Te化学计量和第二后退火步骤温度而变化，并且通常将更长，但是在 与先前的后退火阶段中使用的范围相同。 在从芯芯湮灭第二相碲后，通过固态扩散在300℃，优选280℃的温度下，通过进一步退火约1小时至约20周，在板坯中均匀化杂质。

公开(公告)号：US4504334A

公开(公告)日：1985-03-12

申请号：US564872

申请日：1983-12-23

申请人： Herbert F. Schaake ,  John H. Tregilgas ,  Jeffrey D. Beck

发明人： Herbert F. Schaake ,  John H. Tregilgas ,  Jeffrey D. Beck

IPC分类号： H01L21/477 ,  H01L21/324 ,  H01L21/385

CPC分类号： H01L21/477

摘要： The disclosure relates to a method for removing the unwanted impurities from an HgCdTe alloy which consists of the steps of depositing a thin film on the order of from about 1 to about 100 microns in thickness of tellurium onto the backside of a mercury cadmium telluride bar to insure the presence of a substantial amount of excess tellurium on the backside of the alloy bar and allow the gettering mechanism to work. A protective film to shield the tellurium film from mercury ambient atmosphere is then optionally placed over the tellurium film. The protective film can be formed of a silicon oxide such as SiO and is preferably in the range of about 1000 angstroms to 10 microns or more in thickness. The bar with the tellurium and protective film thereon is then annealed at a temperature of less than 450.degree. C., preferably about 280.degree. C., for a period of from about one day to about four weeks in a saturated mercury atmosphere to allow the impurities in the alloy to diffuse to the backside thereof and into the tellurium layer. The bulk of the impurities will travel into the tellurium layer within a matter of several days at the preferred temperature noted hereinabove. The tellurium layer and protective film are then removed such as by grinding, etching or other appropriate method to remove the impurities from the alloy bar.

摘要翻译： 本公开涉及一种从HgCdTe合金中除去不需要的杂质的方法，该方法包括以下步骤：将碲厚度约1至约100微米的薄膜沉积到碲化汞镉池的背面上， 确保在合金棒的背面存在大量过量的碲，并允许吸气机构工作。 然后任选地将碲膜从汞环境大气屏蔽的保护膜放置在碲膜上。 保护膜可以由诸如SiO的氧化硅形成，并且优选在约1000埃到10微米或更大的范围内。 然后将其上具有碲和保护膜的棒在饱和汞气氛中在小于450℃，优选约280℃的温度下退火约1天至约4周的时间，以使 合金中的杂质扩散到其背面并进入碲层。 在上述优选温度下，大部分杂质将在数天内进入碲层。 然后通过研磨，蚀刻或其它适当的方法除去碲层和保护膜以从合金棒中除去杂质。

公开(公告)号：US20110031401A1

公开(公告)日：2011-02-10

申请号：US12853174

申请日：2010-08-09

申请人： Pradip Mitra ,  Jeffrey D. Beck ,  Mark R. Skokan

发明人： Pradip Mitra ,  Jeffrey D. Beck ,  Mark R. Skokan

IPC分类号： G01J1/16 ,  H01L31/0296 ,  H01L31/18

CPC分类号： G01J1/44 ,  H01L27/1446 ,  H01L27/14652 ,  H01L31/02161 ,  H01L31/0232 ,  H01L31/024 ,  H01L31/02966 ,  H01L31/101 ,  H01L31/1032 ,  H01L31/1832

摘要： A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.

摘要翻译： 提供一种辐射检测器，其包括具有渐变多层结构的辐射吸收体的光电二极管。 吸收体的各层由诸如HgCdTe的半导体材料形成。 第一层被形成为具有第一预定波长截止。 层中的第二层设置在吸收体的第一层和第一表面之下，辐射被接收在该吸收体的第一表面下方。 第二层具有半导体材料的渐变组成结构，使得第二层的波长截止从第二预定波长截止到第一预定波长截止不同，使得第二层比带隙的第一带隙具有逐渐变小的带隙 第一层 分级多层辐射吸收器结构使得载体能够朝向用于测量由辐射吸收器感测的辐射的导体流动。

公开(公告)号：US08772717B2

公开(公告)日：2014-07-08

申请号：US12853174

申请日：2010-08-09

申请人： Pradip Mitra ,  Jeffrey D. Beck ,  Mark R. Skokan

发明人： Pradip Mitra ,  Jeffrey D. Beck ,  Mark R. Skokan

IPC分类号： G01J5/00

CPC分类号： G01J1/44 ,  H01L27/1446 ,  H01L27/14652 ,  H01L31/02161 ,  H01L31/0232 ,  H01L31/024 ,  H01L31/02966 ,  H01L31/101 ,  H01L31/1032 ,  H01L31/1832

摘要： A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.

摘要翻译： 提供一种辐射检测器，其包括具有渐变多层结构的辐射吸收体的光电二极管。 吸收体的各层由诸如HgCdTe的半导体材料形成。 第一层被形成为具有第一预定波长截止。 层中的第二层设置在吸收体的第一层和第一表面之下，辐射被接收在该吸收体的第一表面下方。 第二层具有半导体材料的渐变组成结构，使得第二层的波长截止从第二预定波长截止到第一预定波长截止不同，使得第二层比带隙的第一带隙具有逐渐变小的带隙 第一层 分级多层辐射吸收器结构使得载体能够朝向用于测量由辐射吸收器感测的辐射的导体流动。