Systems and Methods for Controlling Deposition of a Charge on a Wafer for Measurement of One or More Electrical Properties of the Wafer
    1.
    发明申请
    Systems and Methods for Controlling Deposition of a Charge on a Wafer for Measurement of One or More Electrical Properties of the Wafer 有权
    用于控制在晶片上沉积电荷以测量晶片的一个或多个电性能的系统和方法

    公开(公告)号:US20070069759A1

    公开(公告)日:2007-03-29

    申请号:US11465893

    申请日:2006-08-21

    IPC分类号: G01R31/26

    摘要: Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.

    摘要翻译: 提供了用于控制晶片上的电荷沉积以测量晶片的一个或多个电性能的系统和方法。 一个系统包括配置成将电荷沉积在晶片上的电晕源和配置成测量电晕源内的一个或多个条件的传感器。 该系统还包括配置为基于一个或多个条件来改变电晕源的一个或多个参数的控制子系统。 另一种系统包括电晕源,其被配置为在电荷沉积期间将电荷沉积在晶片上以及布置在电晕源的放电室内的气体混合物。 气体混合物改变沉积在晶片上的电荷的一个或多个参数。

    Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer
    2.
    发明授权
    Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer 有权
    用于控制在晶片上沉积电荷以测量晶片的一个或多个电性能的系统和方法

    公开(公告)号:US07893703B2

    公开(公告)日:2011-02-22

    申请号:US11465893

    申请日:2006-08-21

    IPC分类号: G01R31/308

    摘要: Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.

    摘要翻译: 提供了用于控制晶片上的电荷沉积以测量晶片的一个或多个电性能的系统和方法。 一个系统包括配置成将电荷沉积在晶片上的电晕源和配置成测量电晕源内的一个或多个条件的传感器。 该系统还包括配置为基于一个或多个条件来改变电晕源的一个或多个参数的控制子系统。 另一种系统包括电晕源,其被配置为在电荷沉积期间将电荷沉积在晶片上以及布置在电晕源的放电室内的气体混合物。 气体混合物改变沉积在晶片上的电荷的一个或多个参数。

    Valve assembly
    3.
    发明申请
    Valve assembly 审中-公开
    阀组件

    公开(公告)号:US20070181182A1

    公开(公告)日:2007-08-09

    申请号:US11351199

    申请日:2006-02-09

    IPC分类号: F16K17/16

    CPC分类号: F16K17/162 Y10T137/1774

    摘要: A valve assembly can include a ruptureable member. The ruptureable member may be secured in place by a first support member, a second support member, and one or more removable engaging elements. The valve assembly can be configured such that the ruptureable member can be removed when a single removable engaging element is removed. In another embodiment, a valve assembly can include a plunger having a substantially solid shaft. The valve assembly can also include a ruptureable section attached to the substantially solid shaft. In still another embodiment, a valve assembly can include a plunger including a stem portion and a motion limiter portion, wherein the motion limiter portion is wider than the stem portion. The valve assembly can also include a spring surrounding the stem portion and the motion limiter portion, wherein the motion limiter portion is configured to keep the spring from becoming fully compressed.

    摘要翻译: 阀组件可包括可破裂构件。 可破裂构件可以通过第一支撑构件,第二支撑构件和一个或多个可移除的接合元件固定就位。 阀组件可以构造成使得当去除单个可移除接合元件时可以去除可破裂构件。 在另一个实施例中,阀组件可以包括具有基本上实心轴的柱塞。 阀组件还可以包括连接到基本上实心的轴的可破裂部分。 在另一个实施例中,阀组件可以包括柱塞,其包括杆部分和运动限制器部分,其中运动限制器部分比杆部分宽。 阀组件还可以包括围绕杆部分和运动限制器部分的弹簧,其中运动限制器部分构造成保持弹簧不被完全压缩。

    NECK DEICER FOR LIQUID HELIUM RECONDENSOR OF MAGNETIC RESONANCE SYSTEM
    4.
    发明申请
    NECK DEICER FOR LIQUID HELIUM RECONDENSOR OF MAGNETIC RESONANCE SYSTEM 审中-公开
    液体共振系统液体回收器的检验员

    公开(公告)号:US20110179808A1

    公开(公告)日:2011-07-28

    申请号:US13061825

    申请日:2009-09-09

    摘要: A cryogenic system comprises: a liquid helium vessel containing liquid helium (LHe) in which are immersed superconducting magnet windings (20); a helium condenser (30); a neck (32) providing fluid communication between the liquid helium vessel and the helium condenser; a heater (42) disposed outside of and not surrounding the neck; and a thermally conductive passive deicing member (50) disposed in the neck, the thermally conductive passive deicing member thermally coupled with the heater to conduct heat from the heater into the neck. A deicing method for deicing a neck (32) of a liquid helium vessel of a superconducting magnet system comprises generating heat at a location (30, 42) outside of the neck and conducting an amount of the generated heat effective for deicing the neck from outside of the neck through an opening of the neck and into the neck to deice the neck.

    摘要翻译: 低温系统包括:含有液氦(LHe)的液氦容器,其中浸入超导磁体绕组(20); 氦冷凝器(30); 提供液氦容器和氦冷凝器之间的流体连通的颈部(32) 设置在颈部外侧并且不围绕颈部的加热器(42) 和设置在所述颈部中的导热无源除冰构件(50),所述导热无源除冰构件与所述加热器热耦合以将热量从所述加热器传导到所述颈部。 用于对超导磁体系统的液氦容器的颈部(32)进行除冰的除冰方法包括在颈部外部的位置(30,42)处产生热量,并且产生一定量的有效用于从外部除冰的颈部的热量 的颈部通过颈部的开口并且进入颈部以切割颈部。