Systems and Methods for Controlling Deposition of a Charge on a Wafer for Measurement of One or More Electrical Properties of the Wafer
    1.
    发明申请
    Systems and Methods for Controlling Deposition of a Charge on a Wafer for Measurement of One or More Electrical Properties of the Wafer 有权
    用于控制在晶片上沉积电荷以测量晶片的一个或多个电性能的系统和方法

    公开(公告)号:US20070069759A1

    公开(公告)日:2007-03-29

    申请号:US11465893

    申请日:2006-08-21

    IPC分类号: G01R31/26

    摘要: Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.

    摘要翻译: 提供了用于控制晶片上的电荷沉积以测量晶片的一个或多个电性能的系统和方法。 一个系统包括配置成将电荷沉积在晶片上的电晕源和配置成测量电晕源内的一个或多个条件的传感器。 该系统还包括配置为基于一个或多个条件来改变电晕源的一个或多个参数的控制子系统。 另一种系统包括电晕源,其被配置为在电荷沉积期间将电荷沉积在晶片上以及布置在电晕源的放电室内的气体混合物。 气体混合物改变沉积在晶片上的电荷的一个或多个参数。

    Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer
    2.
    发明授权
    Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer 有权
    用于控制在晶片上沉积电荷以测量晶片的一个或多个电性能的系统和方法

    公开(公告)号:US07893703B2

    公开(公告)日:2011-02-22

    申请号:US11465893

    申请日:2006-08-21

    IPC分类号: G01R31/308

    摘要: Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.

    摘要翻译: 提供了用于控制晶片上的电荷沉积以测量晶片的一个或多个电性能的系统和方法。 一个系统包括配置成将电荷沉积在晶片上的电晕源和配置成测量电晕源内的一个或多个条件的传感器。 该系统还包括配置为基于一个或多个条件来改变电晕源的一个或多个参数的控制子系统。 另一种系统包括电晕源,其被配置为在电荷沉积期间将电荷沉积在晶片上以及布置在电晕源的放电室内的气体混合物。 气体混合物改变沉积在晶片上的电荷的一个或多个参数。

    Test Pads, Methods and Systems for Measuring Properties of a Wafer
    3.
    发明申请
    Test Pads, Methods and Systems for Measuring Properties of a Wafer 审中-公开
    测试垫,测量硅片性能的方法和系统

    公开(公告)号:US20070109003A1

    公开(公告)日:2007-05-17

    申请号:US11465888

    申请日:2006-08-21

    IPC分类号: G01R31/02

    摘要: Test pads, methods, and systems for measuring properties of a wafer are provided. One test pad formed on a wafer includes a test structure configured such that one or more electrical properties of the test structure can be measured. The test pad also includes a conductive layer formed between the test structure and the wafer. The conductive layer prevents structures located under the test structure between the conductive layer and the wafer from affecting the one or more electrical properties of the test structure during measurement. One method for assessing plasma damage of a wafer includes measuring one or more electrical properties of a test structure formed on the wafer and determining an index characterizing the plasma damage of the test structure using the one or more electrical properties.

    摘要翻译: 提供了用于测量晶片性能的测试垫,方法和系统。 形成在晶片上的一个测试焊盘包括测试结构,其被配置为使得可以测量测试结构的一个或多个电特性。 测试垫还包括在测试结构和晶片之间形成的导电层。 导电层防止在测量期间位于导电层和晶片之间的测试结构下方的结构影响测试结构的一个或多个电性能。 用于评估晶片的等离子体损伤的一种方法包括测量形成在晶片上的测试结构的一个或多个电特性,并使用一个或多个电性质确定表征测试结构的等离子体损伤的指标。

    Methods and systems for determining one or more properties of a specimen
    4.
    发明授权
    Methods and systems for determining one or more properties of a specimen 有权
    用于确定样品的一个或多个性质的方法和系统

    公开(公告)号:US07187186B2

    公开(公告)日:2007-03-06

    申请号:US11078669

    申请日:2005-03-10

    IPC分类号: G01R31/302

    CPC分类号: G01R31/311 G01R31/2648

    摘要: Various methods and systems for determining one or more properties of a specimen are provided. One system for determining a property of a specimen is configured to illuminate a specimen with different wavelengths of light substantially simultaneously. The different wavelengths of light are modulated at substantially the same frequency. The system is also configured to perform at least two measurements on the specimen. A minority carrier diffusion length of the specimen may be determined from the measurements and absorption coefficients of the specimen at the different wavelengths. Another system for detecting defects on a specimen is configured to deposit a charge at multiple locations on an upper surface of the specimen. This system is also configured to measure a vibration of a probe at the multiple locations. Defects may be detected on the specimen using a two-dimensional map of the specimen generated from the measured surface voltages.

    摘要翻译: 提供了用于确定样本的一个或多个属性的各种方法和系统。 用于确定样本特性的一个系统被配置为基本上同时照射具有不同波长的光的样本。 不同波长的光以基本上相同的频率被调制。 该系统还被配置为对样本进行至少两次测量。 样品的少数载流子扩散长度可以根据不同波长的样品的测量和吸收系数来确定。 用于检测样本上的缺陷的另一系统被配置为在样本的上表面上的多个位置沉积电荷。 该系统还被配置为测量在多个位置处的探针的振动。 可以使用从测量的表面电压产生的样本的二维图来在样本上检测缺陷。

    METHODS AND SYSTEMS FOR DETERMINING ONE OR MORE PROPERTIES OF A SPECIMEN
    5.
    发明申请
    METHODS AND SYSTEMS FOR DETERMINING ONE OR MORE PROPERTIES OF A SPECIMEN 审中-公开
    用于确定样本的一个或多个属性的方法和系统

    公开(公告)号:US20070126458A1

    公开(公告)日:2007-06-07

    申请号:US11669209

    申请日:2007-01-31

    IPC分类号: G01R31/26

    CPC分类号: G01R31/311 G01R31/2648

    摘要: Various methods and systems for determining one or more properties of a specimen are provided. One system for determining a property of a specimen is configured to illuminate a specimen with different wavelengths of light substantially simultaneously. The different wavelengths of light are modulated at substantially the same frequency. The system is also configured to perform at least two measurements on the specimen. A minority carrier diffusion length of the specimen may be determined from the measurements and absorption coefficients of the specimen at the different wavelengths. Another system for detecting defects on a specimen is configured to deposit a charge at multiple locations on an upper surface of the specimen. This system is also configured to measure a vibration of a probe at the multiple locations. Defects may be detected on the specimen using a two-dimensional map of the specimen generated from the measured surface voltages.

    摘要翻译: 提供了用于确定样本的一个或多个属性的各种方法和系统。 用于确定样本特性的一个系统被配置为基本上同时照射具有不同波长的光的样本。 不同波长的光以基本上相同的频率被调制。 该系统还被配置为对样本进行至少两次测量。 样品的少数载流子扩散长度可以根据不同波长的样品的测量和吸收系数来确定。 用于检测样本上的缺陷的另一系统被配置为在样本的上表面上的多个位置沉积电荷。 该系统还被配置为测量在多个位置处的探针的振动。 可以使用从测量的表面电压产生的样本的二维图来在样本上检测缺陷。

    Methods and systems for determining one or more properties of a specimen
    6.
    发明申请
    Methods and systems for determining one or more properties of a specimen 有权
    用于确定样品的一个或多个性质的方法和系统

    公开(公告)号:US20050206402A1

    公开(公告)日:2005-09-22

    申请号:US11078669

    申请日:2005-03-10

    CPC分类号: G01R31/311 G01R31/2648

    摘要: Various methods and systems for determining one or more properties of a specimen are provided. One system for determining a property of a specimen is configured to illuminate a specimen with different wavelengths of light substantially simultaneously. The different wavelengths of light are modulated at substantially the same frequency. The system is also configured to perform at least two measurements on the specimen. A minority carrier diffusion length of the specimen may be determined from the measurements and absorption coefficients of the specimen at the different wavelengths. Another system for detecting defects on a specimen is configured to deposit a charge at multiple locations on an upper surface of the specimen. This system is also configured to measure a vibration of a probe at the multiple locations. Defects may be detected on the specimen using a two-dimensional map of the specimen generated from the measured surface voltages.

    摘要翻译: 提供了用于确定样本的一个或多个属性的各种方法和系统。 用于确定样本特性的一个系统被配置为基本上同时照射具有不同波长的光的样本。 不同波长的光以基本上相同的频率被调制。 该系统还被配置为对样本进行至少两次测量。 样品的少数载流子扩散长度可以根据不同波长的样品的测量和吸收系数来确定。 用于检测样本上的缺陷的另一系统被配置为在样本的上表面上的多个位置沉积电荷。 该系统还被配置为测量在多个位置处的探针的振动。 可以使用从测量的表面电压产生的样本的二维图来在样本上检测缺陷。

    Corona based charge voltage measurement
    7.
    发明授权
    Corona based charge voltage measurement 有权
    基于电晕的充电电压测量

    公开(公告)号:US07345306B1

    公开(公告)日:2008-03-18

    申请号:US11421855

    申请日:2006-06-02

    IPC分类号: H01L23/58

    摘要: A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.

    摘要翻译: 测量栅极电介质的电特性的方法。 栅极电介质通过在测量区域处引导高度局部化的能量源进行局部退火,使得测量区域达到退火温度,而周围结构不被显着加热。 在加热测量区域的同时,以一定的流量将含有一定百分比的氢,氘或水蒸汽的气体流动到测量区域。 在测量区域上引入电荷,并且使用非接触电探测来测量栅极电介质的电特性。

    Corona based charge voltage measurement
    8.
    发明授权
    Corona based charge voltage measurement 有权
    基于电晕的充电电压测量

    公开(公告)号:US07098050B1

    公开(公告)日:2006-08-29

    申请号:US10974270

    申请日:2004-10-27

    IPC分类号: H01L31/26

    摘要: A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.

    摘要翻译: 测量栅极电介质的电特性的方法。 栅极电介质通过在测量区域处引导高度局部化的能量源进行局部退火,使得测量区域达到退火温度,而周围结构不被显着加热。 在加热测量区域的同时,以一定的流量将含有一定百分比的氢,氘或水蒸汽的气体流动到测量区域。 在测量区域上引入电荷,并且使用非接触电探测来测量栅极电介质的电特性。

    Systems and methods for using non-contact voltage sensors and corona discharge guns
    9.
    发明授权
    Systems and methods for using non-contact voltage sensors and corona discharge guns 失效
    使用非接触式电压传感器和电晕放电枪的系统和方法

    公开(公告)号:US06909291B1

    公开(公告)日:2005-06-21

    申请号:US10606066

    申请日:2003-06-24

    IPC分类号: G01N27/00 G01R35/00 G01R31/02

    CPC分类号: G01N27/002

    摘要: A method and a system for calibrating the work function of a non-contact voltage sensor are provided. The method includes preparing a reference sample to have a stable work function, measuring a voltage of the sample using a non-contact voltage sensor, and determining a work function correction factor of the sensor from the measured voltage. In turn, the calibrated work function may be used to adjust voltages of substrates measured by the sensor. A corona gun which includes a first electrode and one or more conductive rods is provided. In some embodiments, the conductive rods may be angled between 0 and 90 degrees with respect to a first electrode sidewall and/or be concentrically arranged less than 90 degrees from each other. In addition or alternatively, the corona gun may be adapted to alter its length and/or include a second electrode partially inset within a space surrounded by the first electrode.

    摘要翻译: 提供了一种用于校准非接触式电压传感器的功能的方法和系统。 该方法包括制备参考样品以具有稳定的功函数,使用非接触电压传感器测量样品的电压,以及根据测量的电压确定传感器的功函数校正因子。 反过来,校准的功函数可以用于调节由传感器测量的衬底的电压。 提供包括第一电极和一个或多个导电棒的电晕枪。 在一些实施例中,导电棒相对于第一电极侧壁可以在0度和90度之间成角度和/或彼此同心布置成小于90度。 另外或替代地,电晕枪可以适于改变其长度和/或包括在由第一电极包围的空间内部分插入的第二电极。

    Systems and methods for using non-contact voltage sensors and corona discharge guns
    10.
    发明授权
    Systems and methods for using non-contact voltage sensors and corona discharge guns 有权
    使用非接触式电压传感器和电晕放电枪的系统和方法

    公开(公告)号:US07110238B1

    公开(公告)日:2006-09-19

    申请号:US11154991

    申请日:2005-06-16

    IPC分类号: H01H47/00

    CPC分类号: G01N27/002

    摘要: A method and a system for calibrating the work function of a non-contact voltage sensor are provided. The method includes preparing a reference sample to have a stable work function, measuring a voltage of the sample using a non-contact voltage sensor, and determining a work function correction factor of the sensor from the measured voltage. In turn, the calibrated work function may be used to adjust voltages of substrates measured by the sensor. A corona gun which includes a first electrode and one or more conductive rods is provided. In some embodiments, the conductive rods may be angled between 0 and 90 degrees with respect to a first electrode sidewall and/or be concentrically arranged less than 90 degrees from each other. In addition or alternatively, the corona gun may be adapted to alter its length and/or include a second electrode partially inset within a space surrounded by the first electrode.

    摘要翻译: 提供了一种用于校准非接触式电压传感器的功能的方法和系统。 该方法包括制备参考样品以具有稳定的功函数,使用非接触电压传感器测量样品的电压,以及根据测量的电压确定传感器的功函数校正因子。 反过来,校准的功函数可以用于调节由传感器测量的衬底的电压。 提供包括第一电极和一个或多个导电棒的电晕枪。 在一些实施例中,导电棒相对于第一电极侧壁可以在0度和90度之间成角度和/或彼此同心布置成小于90度。 另外或替代地,电晕枪可以适于改变其长度和/或包括在由第一电极包围的空间内部分插入的第二电极。