公开(公告)号：US20100097854A1

公开(公告)日：2010-04-22

申请号：US12352588

申请日：2009-01-12

申请人： Jen-Jui Huang ,  Hung-Ming Tsai ,  Kuo-Chung Chen

发明人： Jen-Jui Huang ,  Hung-Ming Tsai ,  Kuo-Chung Chen

IPC分类号： G11C16/04 ,  H01L29/788 ,  H01L27/115

CPC分类号： H01L27/11521 ,  G11C16/3427 ,  H01L29/40114 ,  H01L29/42336 ,  H01L29/66825 ,  H01L29/7881

摘要： A flash memory including a substrate having a recess, a buried bit line, a word line, a single side insulating layer, a floating gate, a tunneling dielectric layer, a control gate, and an inter-gate dielectric layer is provided. The buried bit line extends below the recess of the substrate along a first direction. The word line is on the substrate, and extends above the recess along a second direction. The single side insulating layer is on a first sidewall of the recess. The floating gate is on a second sidewall of the recess to be opposite to the single side insulating layer. The tunneling dielectric layer is sandwiched by the floating gate and the substrate to contact the buried bit line. The control gate fills the recess and contacts the word line. The inter-gate dielectric layer is sandwiched by the control gate and the floating gate.

摘要翻译： 提供一种闪速存储器，其包括具有凹部，掩埋位线，字线，单侧绝缘层，浮动栅极，隧道电介质层，控制栅极和栅极间介电层的衬底。 埋置的位线沿着第一方向延伸到衬底的凹部下方。 字线在基板上，并且沿着第二方向在凹部上方延伸。 单侧绝缘层位于凹部的第一侧壁上。 浮动栅极位于凹槽的与单侧绝缘层相对的第二侧壁上。 隧道电介质层被浮动栅极和衬底夹在接触掩埋位线之间。 控制门填充凹槽并接触字线。 栅极间电介质层被控制栅极和浮动栅极夹在中间。

公开(公告)号：US20100032743A1

公开(公告)日：2010-02-11

申请号：US12236487

申请日：2008-09-23

申请人： Jen-Jui Huang ,  Hung-Ming Tsai ,  Kuo-Chung Chen

发明人： Jen-Jui Huang ,  Hung-Ming Tsai ,  Kuo-Chung Chen

IPC分类号： H01L27/108

CPC分类号： H01L27/10885 ,  H01L27/10823 ,  H01L27/10876 ,  H01L29/66666 ,  H01L29/7827

摘要： A dynamic random access memory (DRAM) structure has a stacked capacitor disposed above an upper source/drain region of a vertical transistor having a surrounding gate. The gates of each row of a memory array are electrically connected with a buried word line. Each of bit lines is disposed between two adjacent columns of transistors and electrically connected with lower source/drain regions through bit line contacts. The DRAM structure may have a unit cell size of 4F2.

摘要翻译： 动态随机存取存储器（DRAM）结构具有堆叠电容器，其设置在具有周围栅极的垂直晶体管的上部源极/漏极区域之上。 存储器阵列的每行的栅极与掩埋字线电连接。 每个位线设置在两个相邻的晶体管列之间，并通过位线触点与下部源极/漏极区电连接。 DRAM结构可以具有4F2的单元电池尺寸。

公开(公告)号：US07713855B2

公开(公告)日：2010-05-11

申请号：US11780484

申请日：2007-07-20

申请人： Yu-Chung Fang ,  Hong-Wen Lee ,  Kuo-Chung Chen ,  Jen-Jui Huang ,  Jing-Kae Liou

发明人： Yu-Chung Fang ,  Hong-Wen Lee ,  Kuo-Chung Chen ,  Jen-Jui Huang ,  Jing-Kae Liou

IPC分类号： H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/76897 ,  H01L21/76834 ,  H01L21/76885 ,  H01L21/76895 ,  H01L27/10888

摘要： A method for forming a bit-line contact plug includes providing a substrate including a transistor which includes a gate structure and a source/drain at both sides of the gate structure; forming a conductive layer, a bit-line contact material layer and a hard mask layer; performing an etching process using the conductive layer as an etching stop layer to etch the bit-line contact material layer and the hard mask layer and forming the bit-line contact plug on the source/drain. A transistor structure includes a gate structure and a source/drain at both sides of the gate structure, a conductive layer covering part of the gate structure and connected to the source/drain, and a bit-line contact plug disposed on the conductive layer and directly connected to the conductive layer.

摘要翻译： 一种用于形成位线接触插塞的方法包括：提供包括晶体管的衬底，所述晶体管在栅极结构的两侧包括栅极结构和源极/漏极; 形成导电层，位线接触材料层和硬掩模层; 执行使用导电层作为蚀刻停止层的蚀刻工艺，以蚀刻位线接触材料层和硬掩模层，并在源极/漏极上形成位线接触插塞。 晶体管结构包括在栅极结构的两侧处的栅极结构和源极/漏极，覆盖栅极结构的一部分并连接到源极/漏极的导电层，以及布置在导电层上的位线接触插塞， 直接连接到导电层。

公开(公告)号：US20090124079A1

公开(公告)日：2009-05-14

申请号：US12042347

申请日：2008-03-05

申请人： Jen-Jui Huang ,  Chih-Ching Lin ,  Kuo-Chung Chen

发明人： Jen-Jui Huang ,  Chih-Ching Lin ,  Kuo-Chung Chen

IPC分类号： H01L21/768

CPC分类号： H01L21/76802 ,  H01L27/10888

摘要： A method for fabricating a conductive plug includes the steps of providing a substrate having at least a gate structure thereon, a first dielectric layer covering a surface of the substrate, a second dielectric layer disposed on the first dielectric layer, and at least a metal line formed within the second dielectric layer; forming a hard mask plug on the second dielectric layer; forming a third dielectric layer covering the second dielectric layer and the hard mask plug; removing a portion of the third dielectric layer to expose the hard mask plug; removing the hard mask plug to form a plug hole; and forming the conductive plug within the plug hole to electrically connect with the gate structure.

摘要翻译： 一种用于制造导电插塞的方法包括以下步骤：提供其上具有至少栅极结构的衬底，覆盖衬底表面的第一介电层，设置在第一电介质层上的第二电介质层，以及至少金属线 形成在所述第二电介质层内; 在所述第二电介质层上形成硬掩模塞; 形成覆盖所述第二介电层和所述硬掩模塞的第三介电层; 去除所述第三电介质层的一部分以暴露所述硬掩模塞; 去除硬掩模塞以形成塞孔; 以及在所述插塞孔内形成所述导电插塞以与所述栅极结构电连接。

公开(公告)号：US20080268640A1

公开(公告)日：2008-10-30

申请号：US11780484

申请日：2007-07-20

申请人： Yu-Chung Fang ,  Hong-Wen Lee ,  Kuo-Chung Chen ,  Jen-Jui Huang ,  Jing-Kae Liou

发明人： Yu-Chung Fang ,  Hong-Wen Lee ,  Kuo-Chung Chen ,  Jen-Jui Huang ,  Jing-Kae Liou

IPC分类号： H01L21/441 ,  H01L29/78

CPC分类号： H01L21/76897 ,  H01L21/76834 ,  H01L21/76885 ,  H01L21/76895 ,  H01L27/10888

摘要： A method for forming a bit-line contact plug includes providing a substrate including a transistor which includes a gate structure and a source/drain at both sides of the gate structure; forming a conductive layer, a bit-line contact material layer and a hard mask layer; performing an etching process using the conductive layer as an etching stop layer to etch the bit-line contact material layer and the hard mask layer and forming the bit-line contact plug on the source/drain. A transistor structure includes a gate structure and a source/drain at both sides of the gate structure, a conductive layer covering part of the gate structure and connected to the source/drain, and a bit-line contact plug disposed on the conductive layer and directly connected to the conductive layer.

摘要翻译： 一种用于形成位线接触插塞的方法包括：提供包括晶体管的衬底，所述晶体管在栅极结构的两侧包括栅极结构和源极/漏极; 形成导电层，位线接触材料层和硬掩模层; 执行使用导电层作为蚀刻停止层的蚀刻工艺，以蚀刻位线接触材料层和硬掩模层，并在源极/漏极上形成位线接触插塞。 晶体管结构包括在栅极结构的两侧处的栅极结构和源极/漏极，覆盖栅极结构的一部分并连接到源极/漏极的导电层，以及布置在导电层上的位线接触插塞， 直接连接到导电层。

公开(公告)号：US06993370B2

公开(公告)日：2006-01-31

申请号：US10255592

申请日：2002-09-27

申请人： Kuo-Chung Chen

发明人： Kuo-Chung Chen

IPC分类号： H04B1/38

CPC分类号： H04B1/385 ,  A45F5/02 ,  A45F5/021 ,  A45F2005/025 ,  A45F2200/0516 ,  H04B2001/3855

摘要： A back clip fixture of a receiver and transmitter device assembled by a back clip and a receiver and transmitter device is characterized that a concave slot is respectively disposed at positions opposite two sides of the detachment seat for facilitating the mounting and dismounting of a joint seat piece; more especially, the lower positioning piece has a slot location for fitly assembling an upper positioning piece; furthermore, the upper positioning piece has a notch disposed thereby providing a larger space for a resilient piece to separate from a positioning slot so as to increase the detachment effect.

摘要翻译： 通过后夹和接收器和发射器装置组装的接收器和发射器装置的后夹具的特征在于，凹槽分别设置在与分离座的两侧相对的位置处，以便于安装和拆卸接头座件 ; 更具体地，下定位件具有用于适合组装上定位件的槽位置; 此外，上定位件具有设置的凹口，从而为弹性片提供较大的空间以与定位槽分离，从而增加脱离效果。

公开(公告)号：US07231056B2

公开(公告)日：2007-06-12

申请号：US10781734

申请日：2004-02-20

申请人： Kuo-Chung Chen

发明人： Kuo-Chung Chen

IPC分类号： H04M3/00

CPC分类号： H04R1/1066 ,  H04R1/083 ,  H04R1/1016 ,  H04R2201/107 ,  H04R2201/109

摘要： An adjustable ear-hook earphone with a microphone is disclosed. The apparatus includes an ear hook, a main body and a microphone, wherein the main body have a limiting part and an adjusting post sleeved in a sleeve of the ear hook, thereby the main body are adjustable and moveable in a specific angle ranged from 0 to 210 degrees.

摘要翻译： 公开了一种带麦克风的可调式耳挂式耳机。 该装置包括耳钩，主体和麦克风，其中主体具有限制部分和套筒套在耳钩套筒中的调节柱，从而主体可调节并且可在0°的范围内移动 至210度。

公开(公告)号：US07218897B2

公开(公告)日：2007-05-15

申请号：US11189877

申请日：2005-07-27

申请人： Kuo-Chung Chen

发明人： Kuo-Chung Chen

IPC分类号： H04B1/38

CPC分类号： H04B1/44 ,  G01S19/14 ,  G01S19/35 ,  H04B1/3805 ,  H04M1/05 ,  H04M2250/10

摘要： An extended microphone for a radio communication equipment is disclosed. The extended microphone includes a microphone body; an adapter for connecting the extended microphone with the radio communication equipment; a GPS module disposed on the microphone body for providing a positioning message; and a display module disposed on the microphone body and connected with the GPS module for receiving the positioning message and displaying the positioning message thereon.

摘要翻译： 公开了一种用于无线电通信设备的扩展麦克风。 扩展麦克风包括麦克风主体; 用于将扩展麦克风与无线电通信设备连接的适配器; 设置在麦克风主体上的用于提供定位消息的GPS模块; 以及显示模块，设置在麦克风主体上并与GPS模块相连，用于接收定位消息并在其上显示定位消息。

公开(公告)号：US07831058B2

公开(公告)日：2010-11-09

申请号：US11506793

申请日：2006-08-21

申请人： Kuo-Chung Chen

发明人： Kuo-Chung Chen

IPC分类号： H04R9/08 ,  H04R25/00

CPC分类号： H04R1/345 ,  H04R1/1016 ,  H04R1/105 ,  H04R1/1075

摘要： A microphone positioning structure is connected to an audio output device, and is composed of a sound tube, an end of which is connected with the audio output device; an earplug part which is located at a tail end of the aforementioned sound tube; an ear-hook part, an end of which is connected with the aforementioned sound tube. An end of the sound tube is plugged into the audio output device such as a trumpet or a loudspeaker, the ear-hook part is hung on a user's auricle for positioning, and the earplug part is inserted into the user's ear. In addition, while listening, the ear-hook part is hung and fixed on the user's auricle; therefore, the earplug part will not be subjected to a force, and it will not be fallen off due to a force of gravity and a shaking.

摘要翻译： 麦克风定位结构连接到音频输出设备，并且由声管组成，声管的一端与音频输出设备连接; 耳塞部分，位于前述声管的尾端; 耳钩部分，其端部与上述声管连接。 声管的一端被插入诸如喇叭或扬声器的音频输出装置中，耳挂部分挂在用户的耳廓上以进行定位，耳塞部分插入用户的耳朵。 此外，在收听时，耳挂部分挂在用户的耳廓上并固定; 因此，耳塞部分不会受到力，并且由于重力和振动而不会掉落。

公开(公告)号：US20080148682A1

公开(公告)日：2008-06-26

申请号：US12003238

申请日：2007-12-21

申请人： Kuo-Chung Chen

发明人： Kuo-Chung Chen

IPC分类号： E04C5/16

CPC分类号： E04C5/166

摘要： An antivibration uniform-strength connector including two mating connection plates and a bolt. The connection plates are made of steel material having tensile strength proximate to that of steel reinforcements. The connection plates are made in accordance with the specifications of the steel reinforcements. Each connection plate has a central hole and two lateral extension sections. Each extension section has an opposite contact face. Contact recesses are formed on the contact faces and spaced from the central hole by equal or unequal distances. With steel reinforcements respectively held in the contact recesses, the bolt is tightened in the central hole of one connection plate to fasten the connection plates and fix the steel reinforcements in a double-cross or parallel pattern. The antivibration uniform-strength connector is applicable to the major steel reinforcements of a beam, a column, a bridge, a bridgeboard, etc. to truly strongly fixedly combine the steel reinforcements into a reinforcement network or reinforcement cage. Accordingly, the reinforcement network or reinforcement cage can bear much greater stress, especially the dynamic cyclic shear strength. Therefore, the antivibration strength of a building can be highly enhanced.

摘要翻译： 一种防振均匀强度连接器，包括两个配合连接板和一个螺栓。 连接板由具有接近钢筋增强的拉伸强度的钢材制成。 连接板根据钢筋的规格制造。 每个连接板具有中心孔和两个横向延伸部分。 每个延伸部分都有一个相对的接触面。 在接触面上形成接触凹槽，并且通过相等或不等距离与中心孔间隔开。 钢筋加强件分别固定在接触凹槽中，螺栓在一个连接板的中心孔中紧固，以固定连接板，并以双十字或平行的方式固定钢筋。 防振均匀强度连接器适用于梁，柱，桥梁，桥梁板等的主要钢筋，真正牢固地将钢筋加固到钢筋网或钢筋笼中。 因此，加固网或加筋笼可承受更大的应力，特别是动态循环剪切强度。 因此，可以大大提高建筑物的抗振强度。