ELECTRO-OPTIC DEVICE AND MACH-ZEHNDER OPTICAL MODULATOR HAVING THE SAME
    2.
    发明申请
    ELECTRO-OPTIC DEVICE AND MACH-ZEHNDER OPTICAL MODULATOR HAVING THE SAME 审中-公开
    具有它的电光设备和MACH-ZEHNDER光学调制器

    公开(公告)号:US20120063714A1

    公开(公告)日:2012-03-15

    申请号:US13013012

    申请日:2011-01-25

    CPC classification number: G02F1/025 G02F1/2257 G02F2201/063

    Abstract: Provided are an electro-optic device with a high modulation rate and a mach-zehnder optical modulator having the same. The electro-optic device includes a slap, a rip waveguide, a first impurity region, a second impurity region, and a third impurity region. The slap is disposed on a substrate. The rip waveguide includes a mesa extending in one direction on the slap and the slap disposed under the mesa. The first impurity region is disposed in the slap of one side of the mesa. The third impurity region is disposed in the slap of the other side of the mesa to oppose the first impurity region. The second impurity region is disposed in the rip waveguide between the first impurity region and the third impurity region.

    Abstract translation: 提供具有高调制率的电光装置和具有该电光装置的马赫 - 泽德光调制器。 电光装置包括拍打,裂口波导,第一杂质区,第二杂质区和第三杂质区。 拍击被设置在基板上。 裂口波导包括在拍击上沿一个方向延伸的台面和设置在台面下方的拍子。 第一杂质区设置在台面的一侧的一旁。 第三杂质区域设置在台面的另一侧的拍击中以与第一杂质区域相对。 第二杂质区设置在第一杂质区和第三杂质区之间的裂缝波导中。

    MACH-ZEHNDER MODULATOR
    3.
    发明申请
    MACH-ZEHNDER MODULATOR 失效
    MACH-ZEHNDER调制器

    公开(公告)号:US20120027336A1

    公开(公告)日:2012-02-02

    申请号:US12975161

    申请日:2010-12-21

    Abstract: Provided is a Mach-Zehnder modulator. The Mach-Zehnder modulator comprises an input wave guide and an output wave guide arranged on a substrate, a first branch wave guide and a second branch wave guide connected in parallel between the input and output wave guides, and a connecting region configured to connect the first branch wave guide and the second branch wave guide. Each of the first and second branch wave guides comprises first doped regions doped with a first dopant and second doped regions doped with a second dopant having different conductivity from the first dopant, and the connecting region is doped with the first dopant and arranged between the first regions of the first and second branch wave guides.

    Abstract translation: 提供了马赫 - 曾德尔调制器。 马赫 - 策德尔调制器包括布置在基板上的输入波导和输出波导,在输入和输出波导之间并联连接的第一分支波导和第二分支波导,以及连接区域, 第一分支波导和第二分支波导。 第一和第二分支波导中的每一个包括掺杂有第一掺杂物的第一掺杂区域和掺杂有与第一掺杂剂不同导电性的第二掺杂剂的第二掺杂区域,并且连接区域掺杂有第一掺杂剂并且布置在第一掺杂区域之间 第一和第二分支波导的区域。

    ELECTRO-OPTIC DEVICE
    4.
    发明申请
    ELECTRO-OPTIC DEVICE 审中-公开
    电光设备

    公开(公告)号:US20110109955A1

    公开(公告)日:2011-05-12

    申请号:US12771939

    申请日:2010-04-30

    CPC classification number: G02F1/025 G02F1/2257 G02F2001/212

    Abstract: Provided is an electro-optic device. Sine the electro-optic device includes a plurality of first conductive type semiconductor layers and a plurality of depletion layers formed by a third semiconductor disposed between the plurality of first conductive type semiconductor layers, an electro-optic device optimized for a high speed and low power consumption can be provided.

    Abstract translation: 提供了一种电光装置。 所述电光装置一般包括多个第一导电类型半导体层和由设置在多个第一导电类型半导体层之间的第三半导体层形成的多个耗尽层,为高速和低功率优化的电光装置 可以提供消费。

    ABSORPTION MODULATOR AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    ABSORPTION MODULATOR AND MANUFACTURING METHOD THEREOF 有权
    吸收式调节器及其制造方法

    公开(公告)号:US20100142878A1

    公开(公告)日:2010-06-10

    申请号:US12504607

    申请日:2009-07-16

    Abstract: An absorption modulator is provided. The absorption modulator includes a substrate, an insulation layer disposed on the substrate, and a waveguide having a P-I-N diode structure on the insulation layer. Absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide. The absorption modulator obtains the improved characteristics, such as high speed, low power consumption, and small size, because it greatly reduces the cross-sectional area of the P-I-N diode structure.

    Abstract translation: 提供吸收调制器。 吸收调制器包括基板,设置在基板上的绝缘层,以及在绝缘层上具有P-I-N二极管结构的波导。 当调制输入到波导的光时,P-I-N二极管结构中的本征区域的吸收变化。 吸收调制器由于大大降低了P-I-N二极管结构的截面面积而获得了高速,低功耗,小尺寸等改进的特性。

    SILICON SEMICONDUCTOR BASED HIGH-SPEED RING OPTICAL MODULATOR
    6.
    发明申请
    SILICON SEMICONDUCTOR BASED HIGH-SPEED RING OPTICAL MODULATOR 失效
    基于硅半导体的高速环光学调制器

    公开(公告)号:US20080080803A1

    公开(公告)日:2008-04-03

    申请号:US11833004

    申请日:2007-08-02

    CPC classification number: G02F1/025 G02F1/3133 G02F2001/0152 G02F2203/15

    Abstract: Provided is a high-speed ring optical modulator based on a silicon semiconductor, having increased optical modulation speed. The high-speed ring optical modulator includes a ring optical waveguide including a portion in which the refractive index varies, that is, a refractive index variation portion, and an optical waveguide having a constant refractive index. The refractive index variation portion comprises a bipolar transistor. Thus carriers can be supplied to and discharged from the refractive index variation portion, through which light is transmitted, at high speed, and thus the optical modulation speed can be increased.

    Abstract translation: 提供了一种基于硅半导体的高速环形光调制器,其具有增加的光调制速度。 高速环形光调制器包括环形光波导,其包括折射率变化的部分,即折射率变化部分和具有恒定折射率的光波导。 折射率变化部分包括双极晶体管。 因此,可以高速地将载流子提供给发射光的折射率变化部分放出,从而可以提高光调制速度。

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