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    Method of depositing boron nitride and boron nitride-derived materials
    2.
    发明授权
    Method of depositing boron nitride and boron nitride-derived materials 有权
    沉积氮化硼和氮化硼衍生材料的方法

    公开(公告)号：US08084105B2

    公开(公告)日：2011-12-27

    申请号：US11765257

    申请日：2007-06-19

    申请人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'Saad

    发明人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'Saad

    IPC分类号： H05H1/24

    CPC分类号： C23C16/342 ,  C23C16/45523

    摘要： Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.

    摘要翻译： 提供了形成含硼膜的方法。 所述方法包括将含硼前体和含氮或含氧前体引入室中，并在室中的基底上形成氮化硼或氧化硼膜。 一方面，该方法包括沉积含硼膜，然后将含硼膜暴露于含氮或含氧前体以将氮或氧引入膜中。 含硼膜的沉积和膜暴露于前体可以进行多个循环以获得所需的膜厚度。 另一方面，该方法包括使含硼前体和含氮或含氧前体反应以化学气相沉积氮化硼或氧化硼膜。

    BORON NITRIDE AND BORON NITRIDE-DERIVED MATERIALS DEPOSITION METHOD
    4.
    发明申请
    BORON NITRIDE AND BORON NITRIDE-DERIVED MATERIALS DEPOSITION METHOD 有权
    氮化硼和硼硼衍生物质沉积方法

    公开(公告)号：US20080292798A1

    公开(公告)日：2008-11-27

    申请号：US11765257

    申请日：2007-06-19

    申请人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'saad

    发明人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'saad

    IPC分类号： B05D3/04

    CPC分类号： C23C16/342 ,  C23C16/45523

    摘要： Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.

    摘要翻译： 提供了形成含硼膜的方法。 所述方法包括将含硼前体和含氮或含氧前体引入室中，并在室中的基底上形成氮化硼或氧化硼膜。 一方面，该方法包括沉积含硼膜，然后将含硼膜暴露于含氮或含氧前体以将氮或氧引入膜中。 含硼膜的沉积和膜暴露于前体可以进行多个循环以获得所需的膜厚度。 另一方面，该方法包括使含硼前体和含氮或含氧前体反应以化学气相沉积氮化硼或氧化硼膜。

    Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same
    5.
    发明授权
    Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same 有权
    通过固有钉扎中心在磁场下承载高临界电流的涂层导体高温超导体及其制造方法

    公开(公告)号：US09362025B1

    公开(公告)日：2016-06-07

    申请号：US13369186

    申请日：2012-02-08

    申请人： Jeong-Uk Huh ,  Patrick Turner ,  Christopher Yung ,  Brian Moeckly ,  Viktor Gliantsev

    发明人： Jeong-Uk Huh ,  Patrick Turner ,  Christopher Yung ,  Brian Moeckly ,  Viktor Gliantsev

    IPC分类号： H01B12/06

    CPC分类号： H01L39/2425 ,  H01L39/126 ,  H01L39/2461

    摘要： This invention enables high temperature superconducting (HTS) metal oxide materials ReBa2Cu3Ox ((RE)BCO) to carry high superconducting currents at high current densities under high magnetic field (≧3 Tesla), in all orientations of the field, and at high temperatures (65 Kelvin). The superconductor is adapted to carry current in a superconducting state, with the superconductor having a current (I) carrying capacity of at least 250 A/cm width, in a field of 3 Tesla (T), at 65 Kelvin (K), at all angles relative to the coated conductor. More preferably, the current carrying capacity extends through the range of substantially 250 A/cm to 500 A/cm. Excellent performance is achieved by use of intrinsic pinning centers in the HTS compound. The invention preferably does not require the addition of extra elements or compounds or particles to the superconducting compound during synthesis, nor does it require extra process steps.

    摘要翻译： 本发明使得高温超导（HTS）金属氧化物材料ReBa2Cu3Ox（（RE）BCO）在高磁场（≧3特斯拉）下，在场的所有取向和高温下（高温超导 65开尔文）。 超导体适于在超导状态下承载电流，其中超导体具有至少250A / cm宽度的电流（I）承载能力，在3特斯拉（T），65开尔文（K）的场中，在 所有相对于涂层导体的角度。 更优选地，载流能力延伸到基本上为250A / cm至500A / cm的范围内。 通过在HTS化合物中使用固有的钉扎中心来实现优异的性能。 本发明优选不需要在合成期间向超导化合物添加额外的元素或化合物或颗粒，也不需要额外的工艺步骤。