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    Method of depositing boron nitride and boron nitride-derived materials
    1.
    发明授权
    Method of depositing boron nitride and boron nitride-derived materials 有权
    沉积氮化硼和氮化硼衍生材料的方法

    公开(公告)号：US08084105B2

    公开(公告)日：2011-12-27

    申请号：US11765257

    申请日：2007-06-19

    申请人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'Saad

    发明人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'Saad

    IPC分类号： H05H1/24

    CPC分类号： C23C16/342 ,  C23C16/45523

    摘要： Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.

    摘要翻译： 提供了形成含硼膜的方法。 所述方法包括将含硼前体和含氮或含氧前体引入室中，并在室中的基底上形成氮化硼或氧化硼膜。 一方面，该方法包括沉积含硼膜，然后将含硼膜暴露于含氮或含氧前体以将氮或氧引入膜中。 含硼膜的沉积和膜暴露于前体可以进行多个循环以获得所需的膜厚度。 另一方面，该方法包括使含硼前体和含氮或含氧前体反应以化学气相沉积氮化硼或氧化硼膜。

    Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure
    4.
    发明授权
    Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure 有权
    使用氮等离子体原位处理和非原位UV固化来增加氮化硅拉伸应力的方法

    公开(公告)号：US08138104B2

    公开(公告)日：2012-03-20

    申请号：US11762590

    申请日：2007-06-13

    申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

    发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

    IPC分类号： H01L21/469

    CPC分类号： H01L21/3105 ,  C23C16/345 ,  C23C16/56 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

    摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

    摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据替代实施例，沉积的氮化硅膜在升高的温度下暴露于紫外线（UV）辐射固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化周期的整合方法形成氮化硅膜，以保持薄膜在底层凸起特征的尖角处的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

    METHOD TO INCREASE SILICON NITRIDE TENSILE STRESS USING NITROGEN PLASMA IN-SITU TREATMENT AND EX-SITU UV CURE
    9.
    发明申请
    METHOD TO INCREASE SILICON NITRIDE TENSILE STRESS USING NITROGEN PLASMA IN-SITU TREATMENT AND EX-SITU UV CURE 审中-公开
    使用氮等离子体原位处理和超临界紫外线固化法增加氮化硅拉伸应力的方法

    公开(公告)号：US20120196450A1

    公开(公告)日：2012-08-02

    申请号：US13365226

    申请日：2012-02-02

    申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

    发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

    IPC分类号： H01L21/3105 ,  H01L21/318 ,  H01L21/316

    CPC分类号： H01L21/0234 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

    摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with some embodiments, a deposited silicon nitride film is exposed to curing with plasma and ultraviolet (UV) radiation, thereby helping remove hydrogen from the film and increasing film stress. In accordance with other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

    摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据一些实施例，沉积的氮化硅膜暴露于等离子体和紫外（UV）辐射的固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化循环的整合方法形成氮化硅膜，以在底层凸起特征的尖角处保留膜的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。