公开(公告)号：US07071498B2

公开(公告)日：2006-07-04

申请号：US10740376

申请日：2003-12-17

申请人： Jerry W. Johnson ,  Robert J. Therrien ,  Andrei Vescan ,  Jeffrey D. Brown

发明人： Jerry W. Johnson ,  Robert J. Therrien ,  Andrei Vescan ,  Jeffrey D. Brown

IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L29/80

CPC分类号： H01L29/66212 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/872

摘要： Gallium nitride material devices and methods of forming the same are provided. The devices include an electrode-defining layer. The electrode-defining layer typically has a via formed therein in which an electrode is formed (at least in part). Thus, the via defines (at least in part) dimensions of the electrode. In some cases, the electrode-defining layer is a passivating layer that is formed on a gallium nitride material region.

公开(公告)号：US20100019850A1

公开(公告)日：2010-01-28

申请号：US12508871

申请日：2009-07-24

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, JR. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, JR. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H03F3/16 ,  H01L29/20

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US07135720B2

公开(公告)日：2006-11-14

申请号：US10913297

申请日：2004-08-05

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H01L31/072

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

公开(公告)号：US20080246058A1

公开(公告)日：2008-10-09

申请号：US12059182

申请日：2008-03-31

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H01L29/00

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US07994540B2

公开(公告)日：2011-08-09

申请号：US12508871

申请日：2009-07-24

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H01L31/0328

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US07569871B2

公开(公告)日：2009-08-04

申请号：US12059182

申请日：2008-03-31

申请人： Walter H. Nagy ,  Jerry Wayne Johnson ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Kevin J. Linthicum

发明人： Walter H. Nagy ,  Jerry Wayne Johnson ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Kevin J. Linthicum

IPC分类号： H01L31/072

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US07352016B2

公开(公告)日：2008-04-01

申请号：US11598551

申请日：2006-11-13

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry Wayne Johnson ,  Kevin J. Linthicum ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry Wayne Johnson ,  Kevin J. Linthicum ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan

IPC分类号： H01L31/00

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US20070120147A1

公开(公告)日：2007-05-31

申请号：US11598551

申请日：2006-11-13

申请人： Walter Nagy ,  Ricardo Borges ,  Jeffrey Brown ,  Apurva Chaudhari ,  James Cook ,  Allen Hanson ,  Jerry Johnson ,  Kevin Linthicum ,  Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Sameer Singhal ,  Robert Therrien ,  Andrei Vescan

发明人： Walter Nagy ,  Ricardo Borges ,  Jeffrey Brown ,  Apurva Chaudhari ,  James Cook ,  Allen Hanson ,  Jerry Johnson ,  Kevin Linthicum ,  Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Sameer Singhal ,  Robert Therrien ,  Andrei Vescan

IPC分类号： H01L31/00

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US20060249750A1

公开(公告)日：2006-11-09

申请号：US11477834

申请日：2006-06-29

申请人： Jerry Johnson ,  Robert Therrien ,  Andrei Vescan ,  Jeffrey Brown

发明人： Jerry Johnson ,  Robert Therrien ,  Andrei Vescan ,  Jeffrey Brown

IPC分类号： H01L31/00

CPC分类号： H01L29/66212 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/872

摘要： Gallium nitride material devices and methods of forming the same are provided. The devices include an electrode-defining layer. The electrode-defining layer typically has a via formed therein in which an electrode is formed (at least in part). Thus, the via defines (at least in part) dimensions of the electrode. In some cases, the electrode-defining layer is a passivating layer that is formed on a gallium nitride material region.

摘要翻译： 提供了氮化镓材料器件及其形成方法。 这些装置包括电极限定层。 电极限定层通常形成有在其中形成电极（至少部分）的通孔。 因此，通孔限定（至少部分地）电极的尺寸。 在一些情况下，电极限定层是形成在氮化镓材料区域上的钝化层。

公开(公告)号：US20050167775A1

公开(公告)日：2005-08-04

申请号：US10913297

申请日：2004-08-05

申请人： Walter Nagy ,  Ricardo Borges ,  Jeffrey Brown ,  Apurva Chaudhari ,  James Cook ,  Allen Hanson ,  Jerry Johnson ,  Kevin Linthicum ,  Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Sameer Singhal ,  Robert Therrien ,  Andrei Vescan

发明人： Walter Nagy ,  Ricardo Borges ,  Jeffrey Brown ,  Apurva Chaudhari ,  James Cook ,  Allen Hanson ,  Jerry Johnson ,  Kevin Linthicum ,  Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Sameer Singhal ,  Robert Therrien ,  Andrei Vescan

IPC分类号： H01L29/15 ,  H01L29/20 ,  H01L29/778 ,  H01L29/812

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。