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1.发明授权公开(公告)号：US07569871B2
公开(公告)日：2009-08-04
申请号：US12059182
申请日：2008-03-31
申请人： Walter H. Nagy , Jerry Wayne Johnson , Edwin Lanier Piner , Pradeep Rajagopal , John Claassen Roberts , Sameer Singhal , Robert Joseph Therrien , Andrei Vescan , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Kevin J. Linthicum
发明人： Walter H. Nagy , Jerry Wayne Johnson , Edwin Lanier Piner , Pradeep Rajagopal , John Claassen Roberts , Sameer Singhal , Robert Joseph Therrien , Andrei Vescan , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Kevin J. Linthicum
IPC分类号： H01L31/072
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。
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2.发明授权公开(公告)号：US07352016B2
公开(公告)日：2008-04-01
申请号：US11598551
申请日：2006-11-13
申请人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Jerry Wayne Johnson , Kevin J. Linthicum , Edwin Lanier Piner , Pradeep Rajagopal , John Claassen Roberts , Sameer Singhal , Robert Joseph Therrien , Andrei Vescan
发明人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Jerry Wayne Johnson , Kevin J. Linthicum , Edwin Lanier Piner , Pradeep Rajagopal , John Claassen Roberts , Sameer Singhal , Robert Joseph Therrien , Andrei Vescan
IPC分类号： H01L31/00
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。
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公开(公告)号：US07135720B2
公开(公告)日：2006-11-14
申请号：US10913297
申请日：2004-08-05
申请人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, Jr. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
发明人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, Jr. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
IPC分类号： H01L31/072
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
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4.发明授权公开(公告)号：US07994540B2
公开(公告)日：2011-08-09
申请号：US12508871
申请日：2009-07-24
申请人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, Jr. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
发明人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, Jr. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
IPC分类号： H01L31/0328
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。
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公开(公告)号：US20080246058A1
公开(公告)日：2008-10-09
申请号：US12059182
申请日：2008-03-31
申请人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
发明人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
IPC分类号： H01L29/00
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。
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公开(公告)号：US20100019850A1
公开(公告)日：2010-01-28
申请号：US12508871
申请日：2009-07-24
申请人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, JR. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
发明人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, JR. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。
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公开(公告)号：US06611002B2
公开(公告)日：2003-08-26
申请号：US09792414
申请日：2001-02-23
IPC分类号： H01L3300
CPC分类号： H01L33/38 , H01L29/0657 , H01L29/2003 , H01L29/417 , H01L29/802 , H01L29/861 , H01L33/0079 , H01L33/32 , H01L33/382 , H01L47/026 , H01L2924/10155
摘要： The invention includes providing gallium nitride material devices having backside vias and methods to form the devices. The devices include a gallium nitride material formed over a substrate, such as silicon. The device also may include one or more non-conducting layers between the substrate and the gallium nitride material which can aid in the deposition of the gallium nitride material. A via is provided which extends from the backside of the device through the non-conducting layer(s) to enable electrical conduction between an electrical contact deposited within the via and, for example, an electrical contact on the topside of the device. Thus, devices of the invention may be vertically conducting. Exemplary devices include laser diodes (LDs), light emitting diodes (LEDs), power rectifier diodes, FETs (e.g., HFETs), Gunn-effect diodes, and varactor diodes, among others.
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