公开(公告)号：US07569871B2

公开(公告)日：2009-08-04

申请号：US12059182

申请日：2008-03-31

申请人： Walter H. Nagy ,  Jerry Wayne Johnson ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Kevin J. Linthicum

发明人： Walter H. Nagy ,  Jerry Wayne Johnson ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Kevin J. Linthicum

IPC分类号： H01L31/072

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US07352016B2

公开(公告)日：2008-04-01

申请号：US11598551

申请日：2006-11-13

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry Wayne Johnson ,  Kevin J. Linthicum ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry Wayne Johnson ,  Kevin J. Linthicum ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan

IPC分类号： H01L31/00

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US09608102B2

公开(公告)日：2017-03-28

申请号：US11607129

申请日：2006-11-30

申请人： Jerry Wayne Johnson ,  Sameer Singhal ,  Allen W. Hanson ,  Robert Joseph Therrien

发明人： Jerry Wayne Johnson ,  Sameer Singhal ,  Allen W. Hanson ,  Robert Joseph Therrien

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/66462

摘要： Gallium nitride material devices and methods associated with the same. In some embodiments, the devices may be transistors which include a conductive structure connected to a source electrode. The conductive structure may form a source field plate which can be formed over a dielectric material and can extend in the direction of the gate electrode of the transistor. The source field plate may reduce the electrical field (e.g., peak electrical field and/or integrated electrical field) in the region of the device between the gate electrode and the drain electrode which can lead to a number of advantages including reduced gate-drain feedback capacitance, reduced surface electron concentration, increased breakdown voltage, and improved device reliability. These advantages enable the gallium nitride material transistors to operate at high drain efficiencies and/or high output powers. The devices can be used in RF power applications, amongst others.

公开(公告)号：US08343824B2

公开(公告)日：2013-01-01

申请号：US12143727

申请日：2008-06-20

申请人： Edwin Lanier Piner ,  Jerry Wayne Johnson ,  John Claassen Roberts

发明人： Edwin Lanier Piner ,  Jerry Wayne Johnson ,  John Claassen Roberts

IPC分类号： H01L21/337 ,  H01L21/00 ,  H01L29/12 ,  H01L29/20

CPC分类号： H01L29/7787 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01S5/32341

摘要： Gallium nitride material devices and related processes are described. In some embodiments, an N-face of the gallium nitride material region is exposed by removing an underlying region.

摘要翻译： 描述了氮化镓材料器件和相关工艺。 在一些实施例中，通过去除下面的区域来暴露氮化镓材料区域的N面。

公开(公告)号：US07748945B2

公开(公告)日：2010-07-06

申请号：US11552625

申请日：2006-12-07

申请人： Jerry Wayne Johnson

发明人： Jerry Wayne Johnson

IPC分类号： F01D11/08

CPC分类号： F01D11/001 ,  F01D11/025 ,  F16J15/442 ,  F16J15/445 ,  F16J15/4472

摘要： An apparatus for sealing a turbine against leakage of a working fluid comprising at least one radially displaceable sealing ring, coaxially disposed about a rotating member of the turbine from a stationary member of the turbine, which sealing ring undergoes radial displacements that are coupled to radial displacements of the rotating member, such that a design radial clearance is substantially maintained without damage to the apparatus.

摘要翻译： 一种用于密封涡轮机以防止工作流体泄漏的装置，包括至少一个可径向移动的密封环，所述至少一个可径向移动的密封环从涡轮机的固定构件围绕涡轮机的旋转构件共轴设置，该密封环经受与径向位移耦合的径向位移 使得设计径向间隙基本上保持而不损坏设备。

公开(公告)号：US20080136115A1

公开(公告)日：2008-06-12

申请号：US11552625

申请日：2006-12-07

申请人： Jerry Wayne Johnson

发明人： Jerry Wayne Johnson

IPC分类号： F01D11/08

CPC分类号： F01D11/001 ,  F01D11/025 ,  F16J15/442 ,  F16J15/445 ,  F16J15/4472

摘要： An apparatus for sealing a turbine against leakage of a working fluid comprising at least one radially displaceable sealing ring, coaxially disposed about a rotating member of the turbine from a stationary member of the turbine, which sealing ring undergoes radial displacements that are coupled to radial displacements of the rotating member, such that a design radial clearance is substantially maintained without damage to the apparatus.

摘要翻译： 一种用于密封涡轮机以防止工作流体泄漏的装置，包括至少一个可径向移动的密封环，所述至少一个可径向移动的密封环从涡轮机的固定构件围绕涡轮机的旋转构件共轴设置，该密封环经受与径向位移耦合的径向位移 使得设计径向间隙基本上保持而不损坏设备。